KR100857227B1 - 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 - Google Patents

단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 Download PDF

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KR100857227B1
KR100857227B1 KR1020070024682A KR20070024682A KR100857227B1 KR 100857227 B1 KR100857227 B1 KR 100857227B1 KR 1020070024682 A KR1020070024682 A KR 1020070024682A KR 20070024682 A KR20070024682 A KR 20070024682A KR 100857227 B1 KR100857227 B1 KR 100857227B1
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South Korea
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group
iii
thin film
precursor
compound
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Korean (ko)
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최인환
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(주)인솔라텍
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Priority to KR1020070024682A priority Critical patent/KR100857227B1/ko
Priority to PCT/KR2008/001041 priority patent/WO2008111738A1/en
Priority to CN2008800076821A priority patent/CN101632154B/zh
Priority to EP08723079A priority patent/EP2126964A1/en
Priority to US12/530,881 priority patent/US20100098856A1/en
Priority to JP2009553506A priority patent/JP2010530474A/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020070024682A 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 Expired - Fee Related KR100857227B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020070024682A KR100857227B1 (ko) 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법
PCT/KR2008/001041 WO2008111738A1 (en) 2007-03-13 2008-02-22 Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process
CN2008800076821A CN101632154B (zh) 2007-03-13 2008-02-22 利用一步金属有机化学气相沉积工艺制备ⅰ-ⅲ-ⅵ2化合物薄膜的方法
EP08723079A EP2126964A1 (en) 2007-03-13 2008-02-22 Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process
US12/530,881 US20100098856A1 (en) 2007-03-13 2008-02-22 Method for fabricating i -iii-vi2 compound thin film using single metal-organic chemical vapor deposition process
JP2009553506A JP2010530474A (ja) 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070024682A KR100857227B1 (ko) 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법

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KR100857227B1 true KR100857227B1 (ko) 2008-09-05

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Country Status (6)

Country Link
US (1) US20100098856A1 (https=)
EP (1) EP2126964A1 (https=)
JP (1) JP2010530474A (https=)
KR (1) KR100857227B1 (https=)
CN (1) CN101632154B (https=)
WO (1) WO2008111738A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982475B1 (ko) * 2008-09-29 2010-09-15 주식회사 쎄믹스 광 흡수용 화합물 박막 제조방법
KR101071545B1 (ko) * 2008-12-30 2011-10-11 주식회사 메카로닉스 Ｃｉｇｓ 박막 제조방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
US20120319244A1 (en) * 2010-01-29 2012-12-20 Kyocera Corporation Method for manufacturing semiconductor layer, method for manufacturing photoelectric conversion device, and semiconductor layer forming solution
CN102634776B (zh) * 2012-05-03 2014-03-12 徐明生 一种连续制备二维纳米薄膜的化学气相沉积设备
CN108541349B (zh) * 2016-01-13 2021-06-22 马卡罗能源有限公司 包括cigs光吸收层的太阳能电池及其制造方法
JP6842035B2 (ja) * 2016-12-19 2021-03-17 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法
JP7070826B2 (ja) * 2017-02-28 2022-05-18 国立大学法人東海国立大学機構 半導体ナノ粒子およびその製造方法ならびに発光デバイス
WO2018159699A1 (ja) * 2017-02-28 2018-09-07 国立大学法人名古屋大学 半導体ナノ粒子およびその製造方法ならびに発光デバイス
US20200082995A1 (en) * 2018-09-06 2020-03-12 Ascent Solar Technologies, Inc. Chalcopyrite-perovskite pn-junction thin-film photovoltaic device

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR20050013063A (ko) * 2003-07-26 2005-02-02 (주)인솔라텍 태양전지 흡수층의 제조 방법

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Publication number Priority date Publication date Assignee Title
JP2000144014A (ja) * 1998-11-06 2000-05-26 Asahi Chem Ind Co Ltd 化合物半導体薄膜の形成方法
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
EP1649520A4 (en) * 2003-07-26 2009-03-11 In Solar Tech Co Ltd PROCESS FOR PREPARING ABSORBENT LAYERS FOR A SOLAR CELL
KR100495925B1 (ko) * 2005-01-12 2005-06-17 (주)인솔라텍 태양전지용 광흡수층 및 그 제조 방법
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050013063A (ko) * 2003-07-26 2005-02-02 (주)인솔라텍 태양전지 흡수층의 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982475B1 (ko) * 2008-09-29 2010-09-15 주식회사 쎄믹스 광 흡수용 화합물 박막 제조방법
KR101071545B1 (ko) * 2008-12-30 2011-10-11 주식회사 메카로닉스 Ｃｉｇｓ 박막 제조방법

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Publication number Publication date
EP2126964A1 (en) 2009-12-02
CN101632154A (zh) 2010-01-20
WO2008111738A1 (en) 2008-09-18
CN101632154B (zh) 2011-11-02
JP2010530474A (ja) 2010-09-09
US20100098856A1 (en) 2010-04-22

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