KR100855845B1 - 반도체 소자의 미세패턴 형성방법 - Google Patents

반도체 소자의 미세패턴 형성방법 Download PDF

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Publication number
KR100855845B1
KR100855845B1 KR1020070064135A KR20070064135A KR100855845B1 KR 100855845 B1 KR100855845 B1 KR 100855845B1 KR 1020070064135 A KR1020070064135 A KR 1020070064135A KR 20070064135 A KR20070064135 A KR 20070064135A KR 100855845 B1 KR100855845 B1 KR 100855845B1
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KR
South Korea
Prior art keywords
layer
photoresist pattern
forming
silicon
pattern
Prior art date
Application number
KR1020070064135A
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English (en)
Korean (ko)
Other versions
KR20080024053A (ko
Inventor
정재창
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to US11/772,016 priority Critical patent/US7959818B2/en
Priority to TW096125546A priority patent/TWI353627B/zh
Priority to CN2007101301542A priority patent/CN101145515B/zh
Priority to DE102007033866A priority patent/DE102007033866A1/de
Priority to JP2007213653A priority patent/JP2008072101A/ja
Publication of KR20080024053A publication Critical patent/KR20080024053A/ko
Application granted granted Critical
Publication of KR100855845B1 publication Critical patent/KR100855845B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020070064135A 2006-09-12 2007-06-28 반도체 소자의 미세패턴 형성방법 KR100855845B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US11/772,016 US7959818B2 (en) 2006-09-12 2007-06-29 Method for forming a fine pattern of a semiconductor device
TW096125546A TWI353627B (en) 2006-09-12 2007-07-13 Method for forming a fine pattern of a semiconduct
CN2007101301542A CN101145515B (zh) 2006-09-12 2007-07-20 形成半导体器件的精细图案的方法
DE102007033866A DE102007033866A1 (de) 2006-09-12 2007-07-20 Verfahren zur Bildung einer Feinstruktur für eine Halbleitervorrichtung
JP2007213653A JP2008072101A (ja) 2006-09-12 2007-08-20 半導体素子の微細パターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060087853 2006-09-12
KR1020060087853 2006-09-12

Publications (2)

Publication Number Publication Date
KR20080024053A KR20080024053A (ko) 2008-03-17
KR100855845B1 true KR100855845B1 (ko) 2008-09-01

Family

ID=39207930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070064135A KR100855845B1 (ko) 2006-09-12 2007-06-28 반도체 소자의 미세패턴 형성방법

Country Status (3)

Country Link
KR (1) KR100855845B1 (zh)
CN (1) CN101145515B (zh)
TW (1) TWI353627B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096194B1 (ko) * 2008-05-29 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
KR100861169B1 (ko) * 2007-07-27 2008-09-30 주식회사 하이닉스반도체 반도체 소자의 형성 방법
US8741552B2 (en) 2009-02-11 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
KR100955681B1 (ko) 2008-04-14 2010-05-06 주식회사 하이닉스반도체 자기조립분자를 이용한 포토마스크의 제조방법
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8318408B2 (en) 2008-07-28 2012-11-27 Hynix Semiconductor Inc. Method of forming patterns of semiconductor device
KR101435520B1 (ko) 2008-08-11 2014-09-01 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US8048813B2 (en) * 2008-12-01 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing delamination in the fabrication of small-pitch devices
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
US8268543B2 (en) 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
CN102147568A (zh) * 2010-02-09 2011-08-10 台湾积体电路制造股份有限公司 光刻图案化方法及双重图案化方法
KR101120184B1 (ko) * 2010-05-07 2012-02-27 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
TWI418275B (zh) * 2011-01-05 2013-12-01 Chunghwa Prec Test Tech Co Ltd 電路板線路導電結構之製造方法
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
CN109227036A (zh) * 2018-08-17 2019-01-18 基准精密工业(惠州)有限公司 非晶合金精密零件的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2004014652A (ja) * 2002-06-04 2004-01-15 Ricoh Co Ltd 微細パターンの形成方法
KR20040045276A (ko) * 2002-11-25 2004-06-01 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법
KR20060020669A (ko) * 2003-06-11 2006-03-06 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성재료 및 미세 패턴 형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2004014652A (ja) * 2002-06-04 2004-01-15 Ricoh Co Ltd 微細パターンの形成方法
KR20040045276A (ko) * 2002-11-25 2004-06-01 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법
KR20060020669A (ko) * 2003-06-11 2006-03-06 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성재료 및 미세 패턴 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096194B1 (ko) * 2008-05-29 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

Also Published As

Publication number Publication date
TWI353627B (en) 2011-12-01
CN101145515A (zh) 2008-03-19
KR20080024053A (ko) 2008-03-17
TW200814146A (en) 2008-03-16
CN101145515B (zh) 2011-06-29

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