KR100855845B1 - 반도체 소자의 미세패턴 형성방법 - Google Patents

반도체 소자의 미세패턴 형성방법 Download PDF

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Publication number
KR100855845B1
KR100855845B1 KR1020070064135A KR20070064135A KR100855845B1 KR 100855845 B1 KR100855845 B1 KR 100855845B1 KR 1020070064135 A KR1020070064135 A KR 1020070064135A KR 20070064135 A KR20070064135 A KR 20070064135A KR 100855845 B1 KR100855845 B1 KR 100855845B1
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KR
South Korea
Prior art keywords
layer
photoresist pattern
forming
silicon
pattern
Prior art date
Application number
KR1020070064135A
Other languages
English (en)
Korean (ko)
Other versions
KR20080024053A (ko
Inventor
정재창
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to US11/772,016 priority Critical patent/US7959818B2/en
Priority to TW096125546A priority patent/TWI353627B/zh
Priority to CN2007101301542A priority patent/CN101145515B/zh
Priority to DE102007033866A priority patent/DE102007033866A1/de
Priority to JP2007213653A priority patent/JP2008072101A/ja
Publication of KR20080024053A publication Critical patent/KR20080024053A/ko
Application granted granted Critical
Publication of KR100855845B1 publication Critical patent/KR100855845B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020070064135A 2006-09-12 2007-06-28 반도체 소자의 미세패턴 형성방법 KR100855845B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US11/772,016 US7959818B2 (en) 2006-09-12 2007-06-29 Method for forming a fine pattern of a semiconductor device
TW096125546A TWI353627B (en) 2006-09-12 2007-07-13 Method for forming a fine pattern of a semiconduct
CN2007101301542A CN101145515B (zh) 2006-09-12 2007-07-20 形成半导体器件的精细图案的方法
DE102007033866A DE102007033866A1 (de) 2006-09-12 2007-07-20 Verfahren zur Bildung einer Feinstruktur für eine Halbleitervorrichtung
JP2007213653A JP2008072101A (ja) 2006-09-12 2007-08-20 半導体素子の微細パターン形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060087853 2006-09-12
KR1020060087853 2006-09-12

Publications (2)

Publication Number Publication Date
KR20080024053A KR20080024053A (ko) 2008-03-17
KR100855845B1 true KR100855845B1 (ko) 2008-09-01

Family

ID=39207930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070064135A KR100855845B1 (ko) 2006-09-12 2007-06-28 반도체 소자의 미세패턴 형성방법

Country Status (3)

Country Link
KR (1) KR100855845B1 (zh)
CN (1) CN101145515B (zh)
TW (1) TWI353627B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096194B1 (ko) * 2008-05-29 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
KR100861169B1 (ko) * 2007-07-27 2008-09-30 주식회사 하이닉스반도체 반도체 소자의 형성 방법
US8741552B2 (en) 2009-02-11 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
KR100955681B1 (ko) 2008-04-14 2010-05-06 주식회사 하이닉스반도체 자기조립분자를 이용한 포토마스크의 제조방법
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8318408B2 (en) 2008-07-28 2012-11-27 Hynix Semiconductor Inc. Method of forming patterns of semiconductor device
KR101435520B1 (ko) 2008-08-11 2014-09-01 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US8048813B2 (en) * 2008-12-01 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing delamination in the fabrication of small-pitch devices
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
US8268543B2 (en) 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
CN102147568A (zh) * 2010-02-09 2011-08-10 台湾积体电路制造股份有限公司 光刻图案化方法及双重图案化方法
KR101120184B1 (ko) * 2010-05-07 2012-02-27 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
TWI418275B (zh) * 2011-01-05 2013-12-01 Chunghwa Prec Test Tech Co Ltd 電路板線路導電結構之製造方法
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
CN109227036A (zh) * 2018-08-17 2019-01-18 基准精密工业（惠州）有限公司 非晶合金精密零件的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2004014652A (ja) * 2002-06-04 2004-01-15 Ricoh Co Ltd 微細パターンの形成方法
KR20040045276A (ko) * 2002-11-25 2004-06-01 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법
KR20060020669A (ko) * 2003-06-11 2006-03-06 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성재료 및 미세 패턴 형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858620A (en) * 1996-07-05 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2004014652A (ja) * 2002-06-04 2004-01-15 Ricoh Co Ltd 微細パターンの形成方法
KR20040045276A (ko) * 2002-11-25 2004-06-01 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법
KR20060020669A (ko) * 2003-06-11 2006-03-06 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성재료 및 미세 패턴 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096194B1 (ko) * 2008-05-29 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

Also Published As

Publication number Publication date
TWI353627B (en) 2011-12-01
CN101145515A (zh) 2008-03-19
KR20080024053A (ko) 2008-03-17
TW200814146A (en) 2008-03-16
CN101145515B (zh) 2011-06-29

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