KR100820615B1 - 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법 - Google Patents

플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법 Download PDF

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Publication number
KR100820615B1
KR100820615B1 KR1020077026433A KR20077026433A KR100820615B1 KR 100820615 B1 KR100820615 B1 KR 100820615B1 KR 1020077026433 A KR1020077026433 A KR 1020077026433A KR 20077026433 A KR20077026433 A KR 20077026433A KR 100820615 B1 KR100820615 B1 KR 100820615B1
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South Korea
Prior art keywords
plasma
antenna
substrate
high frequency
power supply
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Expired - Fee Related
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KR1020077026433A
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Korean (ko)
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KR20070116184A (ko
Inventor
류이치 마츠다
다다시 시마즈
마사히코 이노우에
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미츠비시 쥬고교 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
KR1020077026433A 2002-06-19 2003-06-17 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법 Expired - Fee Related KR100820615B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00178129 2002-06-19
JP2002178129A JP3820188B2 (ja) 2002-06-19 2002-06-19 プラズマ処理装置及びプラズマ処理方法
JP2002351250A JP4052454B2 (ja) 2002-06-19 2002-12-03 酸化シリコン膜又は窒化シリコン膜の製造方法
JPJP-P-2002-00351250 2002-12-03

Related Parent Applications (1)

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KR1020067012843A Division KR100806550B1 (ko) 2002-06-19 2003-06-17 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법

Publications (2)

Publication Number Publication Date
KR20070116184A KR20070116184A (ko) 2007-12-06
KR100820615B1 true KR100820615B1 (ko) 2008-04-08

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KR1020067012843A Expired - Fee Related KR100806550B1 (ko) 2002-06-19 2003-06-17 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법
KR1020077026433A Expired - Fee Related KR100820615B1 (ko) 2002-06-19 2003-06-17 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마 막형성장치 및 플라즈마 막형성 방법
KR1020047020686A Expired - Fee Related KR100661781B1 (ko) 2002-06-19 2003-06-17 플라즈마 처리 장치, 플라즈마 처리 방법, 플라즈마막형성 장치 및 플라즈마 막형성 방법

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Country Status (6)

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US (2) US20050202183A1 (enExample)
EP (2) EP2224468B1 (enExample)
JP (2) JP3820188B2 (enExample)
KR (3) KR100806550B1 (enExample)
TW (2) TW200625417A (enExample)
WO (1) WO2004001822A1 (enExample)

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US8895388B2 (en) * 2006-07-21 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
KR100808862B1 (ko) * 2006-07-24 2008-03-03 삼성전자주식회사 기판처리장치
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
JP5330747B2 (ja) * 2008-06-30 2013-10-30 三菱重工業株式会社 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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CN205741208U (zh) * 2015-09-16 2016-11-30 应用材料公司 用于改进的等离子体处理腔室的系统和设备
US10544505B2 (en) 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
US20180277340A1 (en) * 2017-03-24 2018-09-27 Yang Yang Plasma reactor with electron beam of secondary electrons
KR101914902B1 (ko) * 2018-02-14 2019-01-14 성균관대학교산학협력단 플라즈마 발생장치 및 이를 포함하는 기판 처리 장치

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Also Published As

Publication number Publication date
US20050202183A1 (en) 2005-09-15
KR20050012818A (ko) 2005-02-02
JP4052454B2 (ja) 2008-02-27
KR20070116184A (ko) 2007-12-06
US8662010B2 (en) 2014-03-04
EP2224468B1 (en) 2013-08-14
JP2004022935A (ja) 2004-01-22
EP1515362A1 (en) 2005-03-16
JP3820188B2 (ja) 2006-09-13
KR100806550B1 (ko) 2008-02-27
EP2224468A1 (en) 2010-09-01
TW200415710A (en) 2004-08-16
TWI305375B (enExample) 2009-01-11
KR100661781B1 (ko) 2006-12-28
US20070224364A1 (en) 2007-09-27
EP1515362B1 (en) 2012-07-04
JP2004186402A (ja) 2004-07-02
KR20060084067A (ko) 2006-07-21
EP1515362A4 (en) 2009-07-15
TWI276163B (en) 2007-03-11
WO2004001822A1 (ja) 2003-12-31
TW200625417A (en) 2006-07-16

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