KR100806233B1 - 레티클에서의 다층 결함의 완화방법 - Google Patents
레티클에서의 다층 결함의 완화방법 Download PDFInfo
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- KR100806233B1 KR100806233B1 KR1020037004362A KR20037004362A KR100806233B1 KR 100806233 B1 KR100806233 B1 KR 100806233B1 KR 1020037004362 A KR1020037004362 A KR 1020037004362A KR 20037004362 A KR20037004362 A KR 20037004362A KR 100806233 B1 KR100806233 B1 KR 100806233B1
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- 230000007547 defect Effects 0.000 title claims abstract description 50
- 230000000116 mitigating effect Effects 0.000 title description 2
- 238000000576 coating method Methods 0.000 claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000010894 electron beam technology Methods 0.000 claims abstract description 29
- 230000008859 change Effects 0.000 claims abstract description 21
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims abstract description 15
- 230000008602 contraction Effects 0.000 claims abstract description 5
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 150000003377 silicon compounds Chemical class 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims description 7
- 230000035508 accumulation Effects 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000007373 indentation Methods 0.000 claims description 5
- 238000000280 densification Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 9
- 230000004888 barrier function Effects 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 230000008439 repair process Effects 0.000 abstract description 11
- 230000004048 modification Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 3
- 230000004807 localization Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000000233 ultraviolet lithography Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000001994 activation Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- -1 dirt Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/32—Fiducial marks and measuring scales within the optical system
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Prostheses (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
물 질 | K(W/cm -˚K) | P(gm/㎤) | Cp(J/gm-˚K) | σ(1/Ω-㎝) |
Mo/Si 다층 피막 실리콘 기판 | 1.45 1.49 | 5.48 2.33 | 0.53 0.71 | 1*104 1 |
Claims (39)
- 결함이 있는 박막 코팅(thin film coating)이 된 기판을 포함하는 반사 첨단 자외선 인쇄 기술(EUVL) 레티클이 제공되며, 상기 결함은 상기 박막 코팅 내에서 만입(indentation) 및 융기(bump)로 이루어진 그룹에서 선택되는 것인, 단계; 및상기 결함 근방에서 상기 박막 코팅의 두께를 변화시키는 단계;를 포함하는 것을 특징으로 하는 EUVL 시스템에 사용되는 레티클의 다층 결함(multilayer defect)을 완화시키는 방법.
- 제 1항에 있어서,상기 박막 코팅은 다중 층 경계(multiple layer boundaries)를 갖는 다층 코팅을 포함하고, 상기 결함 근방에서 상기 박막 코팅의 두께를 변화시키는 단계는 상기 층 경계중 적어도 하나의 층 경계를 상호확산시키는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 박막 코팅은 다중 층 경계를 갖는 다층 코팅을 포함하고, 상기 결함 근방에서 상기 코팅의 두께를 변화시키는 단계는 상기 다층 코팅의 적어도 한층의 밀도를 변화시키는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 박막 코팅은 다중 층 경계를 갖는 다층 코팅을 포함하고, 상기 결함근방에서 상기 박막 코팅의 두께를 변화시키는 단계는 복수의 상기 층 경계를 상호확산(interdiffusion)시키는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 2항에 있어서,적어도 하나의 층 경계에서 상호 확산시키는 단계는 상기 적어도 하나의 층 경계의 상호확산시 발생하는 치밀화(densification)에 따른 다층 수축(multilayer contraction)를 제어하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 5항에 있어서,다층 수축를 제어하는 단계는 국소화에너지소스 (localized energy source)를 사용하여 상호 확산 단계를 활성화하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 6항에 있어서,상기 국소화에너지소스 전자광선(electron beam)을 포함하는 것을 특징으로 하는 방법.
- 제 7항에 있어서,상기 전자 광선은 집속되는 것을 특징으로 하는 방법.
- 제 6항에 있어서,상기 국소화에너지소스는 전자기 광선(electromagnetic beam), 전자 광선(electron beam), 및 이온 광선(ion beam)의 그룹에서 선택되는 것을 특징으로하는 방법.
- 제 9항에 있어서,상기 국소화에너지소스는 집속되는 것을 특징으로 하는 방법.
- 제 6항에 있어서,상기 국소화에너지소스는 전극을 포함하는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 결함은 티끌이나 미끄러운 부분(sleek)위로 다층 증착이 이루어져 발생하는 둔턱이나 융기를 포함하고, 상기 결함 위치에 있는 다층 피막 두께를 감소시키거나 상기 둔턱의 측면을 펴서 상기 결함의 경사를 감소시켜, 상기 결함을 완화시키는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 결함은 구멍이나 긁힘위로 다층 축적이 이루어져 발생하는 함몰을 포함 하고, 상기 결함 위치에 있는 다층 피막 두께를 증가시키거나 상기 함몰부분의 측면을 펴서 상기 결함의 경사를 감소시켜, 상기 결함을 완화시키는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 박막 코팅은 반사 다층 구조(reflective multilayer structure)를 포함하는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 박막 코팅은 완충층으로 이용되고, 상기 EUVL 레티클은 상기 다층 코팅에 증착된 반사 다층 코팅을 더 포함하는 것을 특징으로하는 방법.
- 제 14항에 있어서,상기 다층 코팅은 몰리브덴/실리콘(Mo/Si)을 포함하는 것을 특징으로 하는 방법.
- 제 5항에 있어서,상기 치밀화는 규소화합물 구조화를 포함하는 것을 특징으로 하는 방법.
- 제 9항에 있어서,상기 국소화에너지소스의 에너지 양을 조정하여, 상기 다층 코팅의 두께 감소량을 조절하는 것을 더 포함하는 것을 특징으로 하는 방법.
- 제 9항에 있어서,1 nm이하로 정밀하게 피막 두께 감소량을 조절하기 위해 상기 국소화에너지소스의 에너지 양을 조정하는 것을 특징으로 하는 방법.
- 제 9항에 있어서,상기 국소화에너지소스가 생성하는 에너지의 국소적 축적을 위한 측면 공간 분해능(lateral spatial resolution)을 조절하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제 9항에 있어서,상기 변화의 정도는 상기 국소화에너지소스의 노출 시간을 조정하여 조절되는 것을 특징으로 하는 방법.
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/669,390 | 2000-09-26 | ||
US09/669,390 US6821682B1 (en) | 2000-09-26 | 2000-09-26 | Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography |
PCT/US2001/027665 WO2002027404A2 (en) | 2000-09-26 | 2001-09-05 | Mitigation of multilayer defects on a reticle |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040012665A KR20040012665A (ko) | 2004-02-11 |
KR100806233B1 true KR100806233B1 (ko) | 2008-02-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037004362A KR100806233B1 (ko) | 2000-09-26 | 2001-09-05 | 레티클에서의 다층 결함의 완화방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6821682B1 (ko) |
EP (1) | EP1336130B1 (ko) |
JP (1) | JP4774188B2 (ko) |
KR (1) | KR100806233B1 (ko) |
AT (1) | ATE461471T1 (ko) |
AU (2) | AU2001287109A1 (ko) |
DE (1) | DE60141597D1 (ko) |
WO (1) | WO2002027404A2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160150609A (ko) * | 2015-06-22 | 2016-12-30 | 칼 짜이스 에스엠티 게엠베하 | 극자외선 리소그라피에서의 임계 치수 변동 정정 |
KR20200088794A (ko) * | 2020-07-13 | 2020-07-23 | 삼성전자주식회사 | 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6821682B1 (en) * | 2000-09-26 | 2004-11-23 | The Euv Llc | Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography |
EP1320117A3 (en) * | 2001-12-13 | 2003-11-26 | Sony International (Europe) GmbH | Method for defect and conductivity engineering of a conducting nanoscaled structure |
US6888150B2 (en) * | 2001-12-13 | 2005-05-03 | Sony International (Europe) Gmbh | Method for defect and conductivity engineering of a conducting nanoscaled structure |
US7662263B2 (en) * | 2002-09-27 | 2010-02-16 | Euv Llc. | Figure correction of multilayer coated optics |
US7022435B2 (en) * | 2002-09-27 | 2006-04-04 | Euv Limited Liability Corporation | Method for the manufacture of phase shifting masks for EUV lithography |
JP2005266650A (ja) * | 2004-03-22 | 2005-09-29 | Sii Nanotechnology Inc | スクラッチ修正加工方法及びそれに用いるspm |
JP4538254B2 (ja) * | 2004-03-25 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | Euvリソグラフィー用マスク基板及びその製造方法 |
US7230695B2 (en) * | 2004-07-08 | 2007-06-12 | Asahi Glass Company, Ltd. | Defect repair device and defect repair method |
US7534532B2 (en) * | 2005-01-27 | 2009-05-19 | Intel Corporation | Method to correct EUVL mask substrate non-flatness |
US20060234135A1 (en) * | 2005-04-18 | 2006-10-19 | The Regents Of The University Of Ca | Method for repairing mask-blank defects using repair-zone compensation |
KR100674969B1 (ko) * | 2005-04-20 | 2007-01-26 | 삼성전자주식회사 | Euvl 교호 위상반전 마스크의 제조 방법 |
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KR20160150609A (ko) * | 2015-06-22 | 2016-12-30 | 칼 짜이스 에스엠티 게엠베하 | 극자외선 리소그라피에서의 임계 치수 변동 정정 |
KR102361450B1 (ko) * | 2015-06-22 | 2022-02-10 | 칼 짜이스 에스엠티 게엠베하 | 극자외선 리소그라피에서의 임계 치수 변동 정정 |
KR20200088794A (ko) * | 2020-07-13 | 2020-07-23 | 삼성전자주식회사 | 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법 |
KR102246874B1 (ko) * | 2020-07-13 | 2021-04-30 | 삼성전자 주식회사 | 포토마스크, 포토마스크의 에러 보정 방법, 포토마스크를 이용하여 제조된 집적회로 소자 및 그 제조 방법 |
Also Published As
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US6821682B1 (en) | 2004-11-23 |
AU2001287109A1 (en) | 2002-04-08 |
EP1336130A2 (en) | 2003-08-20 |
KR20040012665A (ko) | 2004-02-11 |
EP1336130B1 (en) | 2010-03-17 |
AU8710901A (en) | 2002-04-08 |
WO2002027404A2 (en) | 2002-04-04 |
WO2002027404A8 (en) | 2003-08-07 |
JP4774188B2 (ja) | 2011-09-14 |
JP2004510343A (ja) | 2004-04-02 |
ATE461471T1 (de) | 2010-04-15 |
DE60141597D1 (de) | 2010-04-29 |
WO2002027404A3 (en) | 2003-01-16 |
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