KR100801270B1 - 기판상의 에지의 최소 배제부를 가진 균일막 전착을 위한방법 및 장치 - Google Patents

기판상의 에지의 최소 배제부를 가진 균일막 전착을 위한방법 및 장치 Download PDF

Info

Publication number
KR100801270B1
KR100801270B1 KR1020027008660A KR20027008660A KR100801270B1 KR 100801270 B1 KR100801270 B1 KR 100801270B1 KR 1020027008660 A KR1020027008660 A KR 1020027008660A KR 20027008660 A KR20027008660 A KR 20027008660A KR 100801270 B1 KR100801270 B1 KR 100801270B1
Authority
KR
South Korea
Prior art keywords
wafer
electrolyte
delete delete
region
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020027008660A
Other languages
English (en)
Korean (ko)
Other versions
KR20020095179A (ko
Inventor
베이졸블루언트엠
우조사이프리언
텔리에호메이욘
Original Assignee
에이에스엠 누툴, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠 누툴, 인코포레이티드 filed Critical 에이에스엠 누툴, 인코포레이티드
Publication of KR20020095179A publication Critical patent/KR20020095179A/ko
Application granted granted Critical
Publication of KR100801270B1 publication Critical patent/KR100801270B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020027008660A 2000-11-03 2001-11-02 기판상의 에지의 최소 배제부를 가진 균일막 전착을 위한방법 및 장치 Expired - Fee Related KR100801270B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24521100P 2000-11-03 2000-11-03
US60/245,211 2000-11-03
US09/760,757 2001-01-17
US09/760,757 US6610190B2 (en) 2000-11-03 2001-01-17 Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate

Publications (2)

Publication Number Publication Date
KR20020095179A KR20020095179A (ko) 2002-12-20
KR100801270B1 true KR100801270B1 (ko) 2008-02-04

Family

ID=26937071

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027008660A Expired - Fee Related KR100801270B1 (ko) 2000-11-03 2001-11-02 기판상의 에지의 최소 배제부를 가진 균일막 전착을 위한방법 및 장치

Country Status (8)

Country Link
US (3) US6610190B2 (https=)
EP (1) EP1332243A2 (https=)
JP (1) JP4034655B2 (https=)
KR (1) KR100801270B1 (https=)
CN (1) CN1253608C (https=)
AU (1) AU2002246910A1 (https=)
TW (1) TW511167B (https=)
WO (1) WO2002057514A2 (https=)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686935B2 (en) * 1998-10-26 2010-03-30 Novellus Systems, Inc. Pad-assisted electropolishing
US6251235B1 (en) 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US7204917B2 (en) * 1998-12-01 2007-04-17 Novellus Systems, Inc. Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same
US7097755B2 (en) 1998-12-01 2006-08-29 Asm Nutool, Inc. Electrochemical mechanical processing with advancible sweeper
US7425250B2 (en) 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6852208B2 (en) 2000-03-17 2005-02-08 Nutool, Inc. Method and apparatus for full surface electrotreating of a wafer
US6921551B2 (en) 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US7754061B2 (en) * 2000-08-10 2010-07-13 Novellus Systems, Inc. Method for controlling conductor deposition on predetermined portions of a wafer
US20040170753A1 (en) * 2000-12-18 2004-09-02 Basol Bulent M. Electrochemical mechanical processing using low temperature process environment
US7172497B2 (en) * 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US7244347B2 (en) 2001-01-17 2007-07-17 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
US7211186B2 (en) * 2001-01-17 2007-05-01 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
US7211174B2 (en) * 2001-01-17 2007-05-01 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
AU2002350038A1 (en) * 2001-10-26 2003-05-06 Nutool, Inc. Method and system to provide electrical contacts for electrotreating processes
US6815354B2 (en) * 2001-10-27 2004-11-09 Nutool, Inc. Method and structure for thru-mask contact electrodeposition
CN1646263A (zh) * 2001-11-02 2005-07-27 Asm纳托尔公司 具有可前移的清扫器的电化学机械加工
US6776693B2 (en) * 2001-12-19 2004-08-17 Applied Materials Inc. Method and apparatus for face-up substrate polishing
US7029567B2 (en) * 2001-12-21 2006-04-18 Asm Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US20060137994A1 (en) * 2001-12-21 2006-06-29 Basol Bulent M Method of wafer processing with edge seed layer removal
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US20060049056A1 (en) * 2002-04-12 2006-03-09 Acm Research, Inc. Electropolishing and electroplating methods
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US7090750B2 (en) * 2002-08-26 2006-08-15 Micron Technology, Inc. Plating
US20040226654A1 (en) * 2002-12-17 2004-11-18 Akihisa Hongo Substrate processing apparatus and substrate processing method
US7201828B2 (en) * 2003-02-25 2007-04-10 Novellus Systems, Inc. Planar plating apparatus
US20050173260A1 (en) * 2003-03-18 2005-08-11 Basol Bulent M. System for electrochemical mechanical polishing
EP1620568B1 (en) * 2003-04-24 2008-12-24 Afshin Ahmadian Allele-specific mutation detection assay
US7335288B2 (en) * 2003-09-18 2008-02-26 Novellus Systems, Inc. Methods for depositing copper on a noble metal layer of a work piece
WO2005045906A1 (en) * 2003-10-29 2005-05-19 Asm Nutool, Inc. System and method for electroless surface conditioning
US7064057B2 (en) * 2003-11-21 2006-06-20 Asm Nutool, Inc. Method and apparatus for localized material removal by electrochemical polishing
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US20060183321A1 (en) * 2004-09-27 2006-08-17 Basol Bulent M Method for reduction of gap fill defects
US7550070B2 (en) * 2006-02-03 2009-06-23 Novellus Systems, Inc. Electrode and pad assembly for processing conductive layers
EP1839695A1 (en) * 2006-03-31 2007-10-03 Debiotech S.A. Medical liquid injection device
US8500985B2 (en) 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US7732329B2 (en) * 2006-08-30 2010-06-08 Ipgrip, Llc Method and apparatus for workpiece surface modification for selective material deposition
US20080237048A1 (en) * 2007-03-30 2008-10-02 Ismail Emesh Method and apparatus for selective electrofilling of through-wafer vias
DE102007026633B4 (de) * 2007-06-06 2009-04-02 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware
US20090065365A1 (en) * 2007-09-11 2009-03-12 Asm Nutool, Inc. Method and apparatus for copper electroplating
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
KR102092416B1 (ko) * 2012-03-30 2020-03-24 노벨러스 시스템즈, 인코포레이티드 역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝
SG11201504860PA (en) 2012-12-21 2015-07-30 Agency Science Tech & Res Porous metallic membrane
WO2015072481A1 (ja) * 2013-11-14 2015-05-21 トヨタ自動車株式会社 金属皮膜の成膜装置およびその成膜方法
JP5826952B2 (ja) * 2014-01-17 2015-12-02 株式会社荏原製作所 めっき方法およびめっき装置
JP6745103B2 (ja) * 2014-11-26 2020-08-26 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体電気メッキ装置用のリップシールおよび接触要素
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US20170145577A1 (en) * 2015-11-19 2017-05-25 Rohm And Haas Electronic Materials Llc Method of electroplating low internal stress copper deposits on thin film substrates to inhibit warping
US20190096866A1 (en) * 2017-09-26 2019-03-28 Powertech Technology Inc. Semiconductor package and manufacturing method thereof
KR20220107012A (ko) * 2019-11-27 2022-08-01 램 리써치 코포레이션 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거
US11230778B2 (en) 2019-12-13 2022-01-25 Macdermid Enthone Inc. Cobalt chemistry for smooth topology

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6261426B1 (en) 1999-01-22 2001-07-17 International Business Machines Corporation Method and apparatus for enhancing the uniformity of electrodeposition or electroetching

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328273A (en) 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
FR2510145B1 (fr) 1981-07-24 1986-02-07 Rhone Poulenc Spec Chim Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes
US4948474A (en) 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
DE3836521C2 (de) 1988-10-24 1995-04-13 Atotech Deutschland Gmbh Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5256565A (en) 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5795215A (en) 1995-06-09 1998-08-18 Applied Materials, Inc. Method and apparatus for using a retaining ring to control the edge effect
US5681215A (en) 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
DE69637333T2 (de) 1995-06-27 2008-10-02 International Business Machines Corp. Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US5762544A (en) 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5862605A (en) * 1996-05-24 1999-01-26 Ebara Corporation Vaporizer apparatus
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5933753A (en) 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US5930669A (en) 1997-04-03 1999-07-27 International Business Machines Corporation Continuous highly conductive metal wiring structures and method for fabricating the same
US5922091A (en) 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6001235A (en) 1997-06-23 1999-12-14 International Business Machines Corporation Rotary plater with radially distributed plating solution
US5985123A (en) 1997-07-09 1999-11-16 Koon; Kam Kwan Continuous vertical plating system and method of plating
AU5907798A (en) * 1997-09-30 1999-04-23 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6156167A (en) 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6159354A (en) 1997-11-13 2000-12-12 Novellus Systems, Inc. Electric potential shaping method for electroplating
US5976331A (en) 1998-04-30 1999-11-02 Lucent Technologies Inc. Electrodeposition apparatus for coating wafers
US6071388A (en) 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6074544A (en) 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6132587A (en) 1998-10-19 2000-10-17 Jorne; Jacob Uniform electroplating of wafers
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
US6251235B1 (en) * 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6589105B2 (en) * 1998-12-01 2003-07-08 Nutool, Inc. Pad tensioning method and system in a bi-directional linear polisher
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6103085A (en) 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
JP3422731B2 (ja) * 1999-07-23 2003-06-30 理化学研究所 Ｅｌｉｄセンタレス研削装置
US6653226B1 (en) * 2001-01-09 2003-11-25 Novellus Systems, Inc. Method for electrochemical planarization of metal surfaces
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6346479B1 (en) * 2000-06-14 2002-02-12 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device having copper interconnects
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US6696358B2 (en) * 2001-01-23 2004-02-24 Honeywell International Inc. Viscous protective overlayers for planarization of integrated circuits
US7201829B2 (en) * 2001-03-01 2007-04-10 Novellus Systems, Inc. Mask plate design
US6482656B1 (en) * 2001-06-04 2002-11-19 Advanced Micro Devices, Inc. Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit
TW584899B (en) * 2001-07-20 2004-04-21 Nutool Inc Planar metal electroprocessing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6261426B1 (en) 1999-01-22 2001-07-17 International Business Machines Corporation Method and apparatus for enhancing the uniformity of electrodeposition or electroetching
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment

Also Published As

Publication number Publication date
US20020053516A1 (en) 2002-05-09
AU2002246910A1 (en) 2002-07-30
US6610190B2 (en) 2003-08-26
KR20020095179A (ko) 2002-12-20
CN1253608C (zh) 2006-04-26
JP2005501963A (ja) 2005-01-20
WO2002057514A2 (en) 2002-07-25
JP4034655B2 (ja) 2008-01-16
US20060006060A1 (en) 2006-01-12
WO2002057514A3 (en) 2003-02-06
EP1332243A2 (en) 2003-08-06
TW511167B (en) 2002-11-21
CN1433487A (zh) 2003-07-30
US6942780B2 (en) 2005-09-13
US20030209429A1 (en) 2003-11-13

Similar Documents

Publication Publication Date Title
KR100801270B1 (ko) 기판상의 에지의 최소 배제부를 가진 균일막 전착을 위한방법 및 장치
JP2005501963A5 (https=)
US6852630B2 (en) Electroetching process and system
US7435323B2 (en) Method for controlling thickness uniformity of electroplated layers
US6946066B2 (en) Multi step electrodeposition process for reducing defects and minimizing film thickness
US7578923B2 (en) Electropolishing system and process
US20060219573A1 (en) Apparatus with conductive pad for electroprocessing
KR20050067180A (ko) 통합 도금과 평탄화 공정 및 이를 위한 장치
US7201829B2 (en) Mask plate design
US20030089598A1 (en) Method and system to provide electrical contacts for electrotreating processes
US20070141818A1 (en) Method of depositing materials on full face of a wafer
US7244347B2 (en) Method and system to provide electrical contacts for electrotreating processes
US6652726B1 (en) Method for reducing wafer edge defects in an electrodeposition process
JP2005509092A (ja) 前進可能なスイーパを使った電気化学的機械的処理
US20090020437A1 (en) Method and system for controlled material removal by electrochemical polishing
JP2010037637A (ja) 電解処理装置及び電解処理方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20120110

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130110

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140130

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140130

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000