KR100780960B1 - 반도체 소자의 배선 및 범프의 형성 방법 - Google Patents
반도체 소자의 배선 및 범프의 형성 방법 Download PDFInfo
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- KR100780960B1 KR100780960B1 KR1020060092456A KR20060092456A KR100780960B1 KR 100780960 B1 KR100780960 B1 KR 100780960B1 KR 1020060092456 A KR1020060092456 A KR 1020060092456A KR 20060092456 A KR20060092456 A KR 20060092456A KR 100780960 B1 KR100780960 B1 KR 100780960B1
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- metal layer
- seed metal
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 157
- 239000002184 metal Substances 0.000 title claims abstract description 157
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 35
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 12
- 239000003792 electrolyte Substances 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012364 cultivation method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
Claims (24)
- 반도체 칩의 전면에 제 1 시드 금속층 및 제 2 시드 금속층을 형성하는 단계;배선이 형성될 위치의 상기 제 1 시드 금속층 위에 마스크를 형성하여 배선이 형성되지 않을 곳의 제 1 시드 금속층을 노출시키는 단계;노출된 제 1 시드 금속층을 산화시켜 금속 산화물을 형성하는 단계;상기 마스크를 제거하는 단계;상기 마스크를 제거함으로써 노출된 면 위에 배선 금속을 도금하여 배선을 형성하는 단계; 및상기 배선이 형성되지 않은 곳의 제 2 시드 금속층을 제거하는 단계;를 포함하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 배선을 형성하는 단계와 제 2 시드 금속층을 제거하는 단계 사이에 상기 금속 산화물을 제거하는 단계를 더 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 2 항에 있어서, 상기 금속 산화물을 제거하는 단계가 상기 금속 산화물이 위치하는 쪽의 반도체 칩 면을 황산을 포함하는 액체에 침지시키는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 제 1 시드 금속층이 구리, 은 또는 이들의 합금인 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 제 2 시드 금속층이 티타늄 또는 그의 합금인 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 마스크가 포토레지스트인 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 금속 산화물을 형성하는 단계에서 습식 공정 또는 산소 플라즈마를 이용하여 금속을 산화시키는 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 상기 배선을 형성하는 단계가 도금될 쪽의 반도체 칩면을 도금액 내에 침지시키는 단계를 포함하고, 상기 도금액이 산 전해질을 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 8 항에 있어서, 상기 산 전해질이 황산인 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서, 제 2 시드 금속층을 제거하는 단계가 건식 식각 또는 습식 식각에 의하는 것을 특징으로 하는 배선 형성 방법.
- 반도체 칩의 전면에 제 1 시드 금속층 및 제 2 시드 금속층을 형성하는 단계;범프가 형성될 위치의 상기 제 1 시드 금속층 위에 마스크를 형성하여 범프가 형성되지 않을 곳의 제 1 시드 금속층을 노출시키는 단계;노출된 제 1 시드 금속층을 산화시켜 금속 산화물을 형성하는 단계;상기 마스크를 제거하는 단계;상기 마스크를 제거함으로써 노출된 면 위에 범프 금속을 도금하여 범프를 형성하는 단계; 및상기 범프가 형성되지 않은 곳의 제 2 시드 금속층을 제거하는 단계;를 포함하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 범프를 형성하는 단계와 제 2 시드 금속층을 제거하는 단계 사이에 상기 금속 산화물을 제거하는 단계를 더 포함하는 것을 특징으로 하는 범프 형성 방법.
- 제 12 항에 있어서, 상기 금속 산화물을 제거하는 단계가 상기 금속 산화물이 위치하는 쪽의 반도체 칩 면을 황산을 포함하는 액체에 침지시키는 단계를 포함 하는 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 제 1 시드 금속층이 구리, 은 또는 이들의 합금인 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 제 2 시드 금속층이 티타늄 또는 그의 합금인 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 마스크가 포토레지스트인 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 금속 산화물을 형성하는 단계에서 습식 공정 또는 산소 플라즈마를 이용하여 금속을 산화시키는 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 상기 범프를 형성하는 단계가 도금될 쪽의 반도체 칩면을 도금액 내에 침지시키는 단계를 포함하고, 상기 도금액이 산 전해질을 포함하는 것을 특징으로 하는 범프 형성 방법.
- 제 18 항에 있어서, 상기 산 전해질이 황산인 것을 특징으로 하는 범프 형성 방법.
- 제 11 항에 있어서, 제 2 시드 금속층을 제거하는 단계가 건식 식각 또는 습식 식각에 의하는 것을 특징으로 하는 범프 형성 방법.
- 배선으로서, 제 1 시드 금속층과 제 2 시드 금속층이 적층되고, 상기 제 1 시드 금속층 위에 배선의 길이 방향에 수직인 방향의 단면이 타원 형태인 배선 금속이 위치하는 배선.
- 제 21 항에 있어서, 상기 배선 금속이 상기 제 1 시드 금속층의 측면을 둘러 싸고 있는 것을 특징으로 하는 배선.
- 제 1 시드 금속층과 제 2 시드 금속층이 적층되고, 상기 제 1 시드 금속층 위에 단면이 타원 형태인 솔더볼이 위치하는 범프.
- 제 23 항에 있어서, 상기 솔더볼이 상기 제 1 시드 금속층의 측면을 둘러싸고 있는 것을 특징으로 하는 범프.
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US20080246080A1 (en) * | 2006-07-28 | 2008-10-09 | Broadcom Corporation | Shallow trench isolation (STI) based laterally diffused metal oxide semiconductor (LDMOS) |
US8203188B2 (en) * | 2009-05-22 | 2012-06-19 | Broadcom Corporation | Split gate oxides for a laterally diffused metal oxide semiconductor (LDMOS) |
US8283722B2 (en) | 2010-06-14 | 2012-10-09 | Broadcom Corporation | Semiconductor device having an enhanced well region |
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US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
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