KR100757545B1 - 상부 전극 및 플라즈마 처리 장치 - Google Patents

상부 전극 및 플라즈마 처리 장치 Download PDF

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Publication number
KR100757545B1
KR100757545B1 KR1020040033366A KR20040033366A KR100757545B1 KR 100757545 B1 KR100757545 B1 KR 100757545B1 KR 1020040033366 A KR1020040033366 A KR 1020040033366A KR 20040033366 A KR20040033366 A KR 20040033366A KR 100757545 B1 KR100757545 B1 KR 100757545B1
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South Korea
Prior art keywords
cooling block
upper electrode
refrigerant
electrode
electrode plate
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Expired - Fee Related
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KR1020040033366A
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English (en)
Korean (ko)
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KR20040098551A (ko
Inventor
하야시다이스케
이시다도시후미
기무라시게토시
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동경 엘렉트론 주식회사
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    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020040033366A 2003-05-13 2004-05-12 상부 전극 및 플라즈마 처리 장치 Expired - Fee Related KR100757545B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00135093 2003-05-13
JP2003135093A JP4493932B2 (ja) 2003-05-13 2003-05-13 上部電極及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20040098551A KR20040098551A (ko) 2004-11-20
KR100757545B1 true KR100757545B1 (ko) 2007-09-10

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Family Applications (1)

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KR1020040033366A Expired - Fee Related KR100757545B1 (ko) 2003-05-13 2004-05-12 상부 전극 및 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US20050000442A1 (enExample)
JP (1) JP4493932B2 (enExample)
KR (1) KR100757545B1 (enExample)
CN (1) CN1310290C (enExample)
TW (1) TW200428506A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101062462B1 (ko) 2009-07-28 2011-09-05 엘아이지에이디피 주식회사 샤워헤드 및 이를 포함하는 화학기상증착장치
KR101083590B1 (ko) 2008-09-11 2011-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치

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KR100661744B1 (ko) 2004-12-23 2006-12-27 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR100661740B1 (ko) * 2004-12-23 2006-12-28 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR100572118B1 (ko) * 2005-01-28 2006-04-18 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法
US9520276B2 (en) 2005-06-22 2016-12-13 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
KR100686284B1 (ko) 2005-06-29 2007-02-22 주식회사 래디언테크 상부 전극 유닛 및 이를 이용한 플라즈마 처리 장치
JP2007067150A (ja) * 2005-08-31 2007-03-15 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7883579B2 (en) 2005-12-14 2011-02-08 Tokyo Electron Limited Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus
JP4844167B2 (ja) * 2006-02-24 2011-12-28 東京エレクトロン株式会社 冷却ブロック及びプラズマ処理装置
US20070210037A1 (en) * 2006-02-24 2007-09-13 Toshifumi Ishida Cooling block forming electrode
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
JP4838197B2 (ja) 2007-06-05 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置，電極温度調整装置，電極温度調整方法
KR100890324B1 (ko) * 2007-08-30 2009-03-26 주식회사 동부하이텍 건식 식각 장치
JP5194125B2 (ja) * 2007-09-25 2013-05-08 ラム リサーチ コーポレーション シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US20090095218A1 (en) * 2007-10-16 2009-04-16 Novellus Systems, Inc. Temperature controlled showerhead
US8137467B2 (en) * 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
KR101444873B1 (ko) * 2007-12-26 2014-09-26 주성엔지니어링(주) 기판처리장치
JP5224855B2 (ja) * 2008-03-05 2013-07-03 東京エレクトロン株式会社 電極ユニット、基板処理装置及び電極ユニットの温度制御方法
US20090260571A1 (en) * 2008-04-16 2009-10-22 Novellus Systems, Inc. Showerhead for chemical vapor deposition
CN101296554B (zh) * 2008-06-19 2011-01-26 友达光电股份有限公司 等离子体处理装置及其上电极板
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
CN101656194B (zh) * 2008-08-21 2011-09-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子腔室及其温度控制方法
KR101271943B1 (ko) * 2008-10-29 2013-06-07 세키스이가가쿠 고교가부시키가이샤 플라즈마 처리 장치
JP5302834B2 (ja) * 2009-09-24 2013-10-02 株式会社アルバック プラズマ処理装置
US9034142B2 (en) * 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
JP2011187758A (ja) * 2010-03-10 2011-09-22 Tokyo Electron Ltd 温度制御システム、温度制御方法、プラズマ処理装置及びコンピュータ記憶媒体
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US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
JP5762798B2 (ja) 2011-03-31 2015-08-12 東京エレクトロン株式会社 天井電極板及び基板処理載置
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
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JP2015536043A (ja) 2012-09-26 2015-12-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板処理システムにおける温度制御
CN103072939B (zh) * 2013-01-10 2016-08-03 北京金盛微纳科技有限公司 一种控温深硅刻蚀方法
JP2013110440A (ja) * 2013-03-11 2013-06-06 Tokyo Electron Ltd 電極ユニット及び基板処理装置
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CN104124184B (zh) * 2013-04-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 等离子设备及其控制方法
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CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
JP7413095B2 (ja) * 2020-03-13 2024-01-15 東京エレクトロン株式会社 プラズマ処理装置
JP7560215B2 (ja) 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
JP7664783B2 (ja) * 2021-07-20 2025-04-18 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置で使用する上部電極アセンブリ、上部電極アセンブリの製造方法、及び、上部電極アセンブリの再生方法
JP7531460B2 (ja) * 2021-07-27 2024-08-09 東京エレクトロン株式会社 プラズマ処理装置
JP7693604B2 (ja) * 2022-03-31 2025-06-17 東京エレクトロン株式会社 基板処理装置
JP2024006589A (ja) * 2022-07-04 2024-01-17 三菱マテリアル株式会社 プラズマ処理装置用の電極板と電極構造

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Publication number Priority date Publication date Assignee Title
KR101083590B1 (ko) 2008-09-11 2011-11-16 엘아이지에이디피 주식회사 플라즈마 처리장치
KR101062462B1 (ko) 2009-07-28 2011-09-05 엘아이지에이디피 주식회사 샤워헤드 및 이를 포함하는 화학기상증착장치

Also Published As

Publication number Publication date
CN1551302A (zh) 2004-12-01
CN1310290C (zh) 2007-04-11
TW200428506A (en) 2004-12-16
KR20040098551A (ko) 2004-11-20
US20050000442A1 (en) 2005-01-06
TWI338918B (enExample) 2011-03-11
JP2004342704A (ja) 2004-12-02
JP4493932B2 (ja) 2010-06-30

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