KR100742902B1 - 웨이퍼 레벨 csp의 제조방법 - Google Patents
웨이퍼 레벨 csp의 제조방법 Download PDFInfo
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- KR100742902B1 KR100742902B1 KR1020040073293A KR20040073293A KR100742902B1 KR 100742902 B1 KR100742902 B1 KR 100742902B1 KR 1020040073293 A KR1020040073293 A KR 1020040073293A KR 20040073293 A KR20040073293 A KR 20040073293A KR 100742902 B1 KR100742902 B1 KR 100742902B1
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Abstract
열응력 완화 포스트, 절연층 및 납땜범프의 형성을 능률 좋게 행할 수 있도록 하여 전체의 제조능률을 큰폭으로 향상시킨다.
웨이퍼(1) 위에 도금에 의한 재배선(再配線)회로(3)를 형성함과 동시에 이 재배선회로(3) 위에 납땜 등의 도전재료에 의한 열응력 완화 포스트(4)를 형성한다. 또한, 이들 재배선회로(3)와 열응력 완화 포스트(4)의 주위에 이 열응력 완화 포스트(4)의 상면을 제외하고 폴리이미드 등으로 이루어지는 절연층(6)을 형성하고, 상기 열응력 완화 포스트(4) 위에 납땜범프(7)를 더 형성한다. 그리고 상기 열응력 완화 포스트(4), 절연층(6) 및 납땜범프(7)는 스크린 인쇄에 의해 형성된다.
Description
도 1은 본 발명에 따라 제조된 웨이퍼 레벨 CSP의 단면도이다.
도 2는 종래 방법에 따라 제조된 웨이퍼 레벨 CSP의 단면도이다.
* 주요 부호의 설명 *
1 웨이퍼
2 접합패드
3 재배선회로
4 열응력 완화 포스트
5 절연층
6 절연층
7 납땜범프
8 열응력 서포트층
8a 납땜범프의 하부 바깥 둘레의 수용부
본 발명은 웨이퍼 레벨 CSP의 제조방법에 관한 것이다.
휴대전화, 디지털 비디오, 디지털 카메라 등에 있어 고밀도 실장에 대한 요구에 의해 소형 패키지인 CSP(Chip Size Package)가 급속도로 보급되기 시작하고 있다.
이러한 CSP는 TSOP(Thin Small Outline Package)나 QFP(Quad Flat Package)와 같은 종래 리드 타입 패키지와 비교해서 실장 면적이 작고, 또 배선길이가 짧기 때문에 고주파 디바이스에도 적용하기 쉽다는 특징이 있다. 또한 칩을 직접 기판에 실장하는 플립 칩과 비교하면, 패드피치(pad pitch)를 넓힐 수 있어 기판으로의 실장이 용이하다는 특징도 있다. 환언하면, TSOP 종류의 취급용이성으로 플립 칩 종류의 고속, 고밀도 실장을 실현할 수 있다는 점이 급속하게 보급되기 시작한 요인이 되고 있다.
이에, 이러한 웨이퍼 레벨 CSP의 종래 제조 방법은 도 2에 도시된 바와 같이 웨이퍼(100) 위에 절연재료로 이루어지는 소요(所要) 두께의 열응력 완화층(101)을 형성하고, 이 열응력 완화층(101) 상면에 랜드(land;102)와 이 랜드(102)와 접합 패드(103)를 연결하는 재배선회로(104)를 형성하고, 이 재배선회로(104) 위에 절연층(105)을 더 형성한 후, 랜드(102) 위에 납땜범프(106)를 형성한 것이다. 한편, 열응력 완화층(101)은 웨이퍼를 프린트 기판에 실장한 때 웨이퍼와 프린트 기판의 선팽창계수차에 의해 발생되는 납땜범프의 열 왜곡(변형)을 저감시키고, 접속수명을 향상시키기 위한 것이다. 상기 열응력 완화층(101)은 탄성을 가지는 수지를 주재료로 하여, 납땜범프(106)의 왜곡에 따라 변형되고 이 변형에 의해 왜곡이 저감되는 것이다. 또한 그 외(107)는 웨이퍼(100) 위에 형성된 절연층이다.
그리고, 종래에 있어 열응력 완화층(101)은 인쇄에 의해, 또 재배선회로(104)는 도금에 의해, 또한 절연층(105)은 도포에 의해, 그리고 또 납땜범프(106)는 납땜 볼을 랜드(102) 상에 전재(轉載)하고 리플로우(reflow) 로(爐)에서 가열하여 형성하였다. 그러나 절연층(105)과 납땜범프(106)의 형성에 수고와 시간이 너무 걸리고, 작업능률이 떨어진다는 문제점이 있었다. 또한, 종래는 열응력 완화층(101)이 절연재료이기 때문에 이것의 상면 중앙에 랜드(102)를 형성하지 않으면 안되어, 이것의 형성에 여분의 시간이 걸린다는 문제점도 있었다.
본 발명은 상기의 점을 감안한 것으로 작업능률을 큰 폭으로 향상시킬 수 있도록 이루어진 웨이퍼 레벨 CSP의 제조방법을 제공하고자 하는 것이다.
이에, 본 발명의 요지는, 웨이퍼 위에 도금에 의한 재배선회로를 형성함과 동시에 이 재배선회로 위에 납땜 등의 도전재료에 의한 열응력 완화 포스트를 형성하고, 이들 재배선회로와 열응력 완화 포스트의 주위에 이 열응력 완화 포스트의 상면을 제외하고 폴리이미드 등으로 이루어지는 절연층을 형성하고, 상기 열응력 완화 포스트 위에 납땜범프를 더 형성하는 웨이퍼 레벨 CSP의 제조방법으로서, 상기 열응력 완화 포스트, 절연층 및 납땜범프의 형성을 스크린 인쇄에 의해 이루어지도록 한 것을 특징으로 하는 웨이퍼 레벨 CSP의 제조방법이다.
또한, 상기 제조방법에 있어, 열응력 완화 포스트를 형성하는 도전재료로서 납땜을 이용하는 것이 바람직하다. 이 경우, 열응력 완화 포스트의 재료인 납땜과 납땜범프와의 접합이 금속간 화합물에 의한 융합이 되고, 열응력 완화 포스트의 재료인 납땜과 도금에 의한 재배선회로 간의 상호 확산에 의한 융합보다도 강고(强固)하게 된다.
또한, 상기 제조방법에 있어, 절연층의 상면에 열응력 완화 포스트의 위치에 납땜범프의 하부 바깥 둘레의 수용부를 설치한 절연재료로 이루어지는 열응력 서포트층을 스크린 인쇄에 의해 형성하도록 하여도 무방하다. 이로써 납땜범프의 열 왜곡을 한층 저감할 수 있게 된다.
본 발명을 실시하기 위한 최적의 형태는 열응력 완화 포스트, 절연층 및 납땜범프의 형성을 스크린 인쇄에 의해 행하는 것이다.
이하, 본 발명의 실시예에 대해 도면을 참조하면서 설명한다.
도 1은 본 발명에 따라 제조된 웨이퍼 레벨 CSP의 단면을 도시한 것이다.
도면 중 1은 웨이퍼이다. 2는 상기 웨이퍼(1) 위에 형성된 접합 패드로서, 금(金)의 UBM이다. 3은 상기 웨이퍼(1) 위에 도금에 의해 형성된 재배선회로이다. 4는 상기 재배선회로(3) 위에 형성된 납땜 등의 도전재료에 의한 열응력 완화 포스트이며, 가압식 스크린 인쇄기에 의한 스크린 인쇄에 의해 형성되어 있다. 한편, 본 실시예에서는 도전재료로서 납땜을 이용하고 있다.
5는 웨이퍼(1) 위에 형성된 절연층, 6은 상기 재배선회로(3)와 열응력 완화 포스트(4) 주위에 이 열응력 완화 포스트(4)의 상면을 제외하고 형성된 폴리이미드 등으로 이루어지는 절연층이다. 또한 이 절연층(6)은 가압식 스크린 인쇄기에 의 한 스크린 인쇄에 의해 형성되어 있다.
7은 상기 열응력 완화 포스트(4) 위에 형성된 납땜범프로서, 가압식 스크린 인쇄기에 의한 스크린 인쇄에 의해 형성되어 있다. 8은 상기 절연층(6)의 상면에 형성된 열응력 완화 포스트(4)의 위치에 납땜범프(7)의 하부의 바깥 둘레의 수용부(8a)를 설치한 열응력 서포트층이다. 또한, 이 열응력 서포트층(8)은 폴리이미드 등의 절연재료로 이루어지고, 스크린 인쇄에 의해 형성되어 있다.
본 발명은 상기와 같이 열응력 완화 포스트, 절연층 및 납땜범프의 형성을 스크린 인쇄에 의해 행하는 것이므로, 종래의 제조방법과 비교하여 작업능률을 대폭 향상시킬 수 있다. 또한, 열응력 완화 포스트 위에 직접 납땜범프를 형성하기 때문에, 종래와 같이 랜드를 형성할 필요가 없다. 따라서, 그만큼의 작업공정을 줄일 수 있다.
또한, 열응력 완화 포스트를 형성하는 도전재료로서 납땜을 이용하는 경우에, 납땜범프와의 접합이 금속간 화합물에 의한 융합이 되어 견고한 접합을 가진다.
또한, 절연층의 상면에 열응력 완화 포스트의 위치에 납땜범프의 하부 바깥둘레의 수용부를 설치한 절연재료로 이루어지는 열응력 서포트층을 스크린 인쇄에 의해 형성하도록 한 경우, 납땜범프의 열 왜곡을 한층 저감시킬 수 있다.
Claims (4)
- 웨이퍼 위에 도금에 의한 재배선회로를 형성함과 동시에 상기 재배선회로 위에 도전재료에 의한 열응력 완화 포스트를 형성하고, 상기 재배선회로와 열응력 완화 포스트 주위에 절연재료로 이루어지는 절연층을 형성하며, 또한 상기 절연층 상에 절연재료로 이루어지는 열응력 서포트층을 형성하고, 상기 열응력 완화 포스트의 상면 주위에서 상기 열응력 서포트층에 수용부를 형성하며, 상기 열응력 완화 포스트 위에 그리고 상기 수용부에 납땜범프를 형성하는 웨이퍼 레벨 CSP의 제조방법으로서, 상기 열응력 완화 포스트, 절연층, 열응력 서포트층 및 납땜범프의 형성을 스크린 인쇄에 의해 행하는 것을 특징으로 하는 웨이퍼 레벨 CSP의 제조방법.
- 삭제
- 삭제
- 삭제
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JP5075611B2 (ja) * | 2007-12-21 | 2012-11-21 | ローム株式会社 | 半導体装置 |
KR101678054B1 (ko) | 2010-06-28 | 2016-11-22 | 삼성전자 주식회사 | 반도체 패키지 및 그 반도체 패키지 제조방법 |
US10163828B2 (en) * | 2013-11-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and fabricating method thereof |
US9953954B2 (en) | 2015-12-03 | 2018-04-24 | Mediatek Inc. | Wafer-level chip-scale package with redistribution layer |
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MY139562A (en) | 2009-10-30 |
SG157220A1 (en) | 2009-12-29 |
KR20050028313A (ko) | 2005-03-22 |
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US20080145973A1 (en) | 2008-06-19 |
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