JP2005093772A - ウエハレベルcspの製造方法 - Google Patents

ウエハレベルcspの製造方法 Download PDF

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JP2005093772A
JP2005093772A JP2003325938A JP2003325938A JP2005093772A JP 2005093772 A JP2005093772 A JP 2005093772A JP 2003325938 A JP2003325938 A JP 2003325938A JP 2003325938 A JP2003325938 A JP 2003325938A JP 2005093772 A JP2005093772 A JP 2005093772A
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thermal stress
stress relaxation
post
solder
insulating layer
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JP4360873B2 (ja
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Takehiko Murakami
武彦 村上
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Minami Co Ltd
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Minami Co Ltd
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Priority to TW093127629A priority patent/TWI253128B/zh
Priority to US10/939,416 priority patent/US20050064624A1/en
Priority to KR1020040073293A priority patent/KR100742902B1/ko
Priority to EP04255574A priority patent/EP1517369A3/en
Priority to MYPI20043805A priority patent/MY139562A/en
Priority to CNA2004100781750A priority patent/CN1604295A/zh
Priority to SG200407966-1A priority patent/SG157220A1/en
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Priority to US12/007,406 priority patent/US20080145973A1/en
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Abstract

【課題】熱応力緩和ポスト、絶縁層並びにはんだバンプの形成を能率よく行うようになして全体の製造能率を大幅に向上させる。
【解決手段】ウエハ1上にメッキによる再配線回路3を形成すると共に該再配線回路3上にはんだ等の導電材による熱応力緩和ポスト4を形成する。また、これら再配線回路3と熱応力緩和ポスト4の周囲に、該熱応力緩和ポスト4の上面を除いてポリイミド等からなる絶縁層6を形成し、更に前記熱応力緩和ポスト4上にはんだバンプ7を形成する。そしてまた、前記熱応力緩和ポスト4、絶縁層6並びにはんだバンプ7はスクリーン印刷により形成する。
【選択図】図1

Description

本発明はウエハレベルCSPの製造方法に関するものである。
携帯電話、デジタルビデオ、デジタルカメラなどにおける高密度実装への要求から、小型パッケージであるCSP(Chip Size Package)が急速に普及し始めている。
斯かるCSPは、TSOP(Thin Small Outline Package)やQFP(Quad Flat Package)のような従来型のリードタイプパッケージと比べて実装面積が小さく、また配線長が短いために、高周波デバイスにも適用し易いという特徴がある。また、チップを直接基板に実装するフリップチップと比較すると、パッドピッチを広げることが可能なため、基板への実装が容易であるという特徴もある。言い換えると、TSOP並みの扱い易さで、フリップチップ並みの高速・高密度実装を実現できるという点が、急速に普及し始めた要因となっているのである。
而して、斯かるウエハレベルCSPの従来の製造方法は、図2に示す通りであり、ウエハ100上に絶縁材からなる所要の厚味の熱応力緩和層101を形成し、該熱応力緩和層101の上面にランド102と、該ランド102と接合パッド103とを結ぶ再配線回路104を形成し、更に該再配線回路104上に絶縁層105を形成した後、ランド102上にはんだバンプ106を形成するものである。尚、熱応力緩和層101はウエハをプリント基板に実装したとき、ウエハとプリント基板の線膨張係数差に起因して発生するはんだバンプの熱ひずみを低減し、接続寿命を向上させるためのものである。該熱応力緩和層101は、弾性を有する樹脂を主材とし、はんだバンプ106のひずみに応じて変形し、この変形によってひずみを低減するものである。またその他107は100上に形成した絶縁層である。
そして、従来にあっては熱応力緩和層101は印刷によって、また再配線回路104はメッキによって、また絶縁層105は塗布により、そしてまたはんだバンプ106は、はんだボールをランド102上に転載し、リフロー炉で加熱して形成していた。しかし、絶縁層105とはんだバンプ106の形成に手間と時間がかかり過ぎ、作業能率が悪いという問題点があった。また、従来にあっては熱応力緩和層101が絶縁材であることから、これの上面中央にランド102を形成しなければならず、これの形成に余分の時間がかかるという問題点もあった。
本発明は上記の点に鑑みなされたものであって、作業能率を大幅に向上させることができるようになしたウエハレベルCSPの製造方法を提供せんとするものである。
而して、本発明の要旨とするところは、ウエハ上にメッキによる再配線回路を形成すると共に該再配線回路上にはんだ等の導電材による熱応力緩和ポストを形成し、これら再配線回路と熱応力緩和ポストの周囲に、該該熱応力緩和ポストの上面を除いてポリイミド等からなる絶縁層を形成し、更に前記熱応力緩和ポスト上にはんだバンプを形成するウエハレベルCSPの製造方法であって、前記熱応力緩和ポスト、絶縁層並びにはんだバンプの形成をスクリーン印刷によって行うようになしたことを特徴とするウエハレベルCSPの製造方法にある。
また、上記製造方法において、熱応力緩和ポストを形成する導電材としてはんだを用いることが好ましい。この場合には、熱応力緩和ポストの材料であるはんだとはんだバンプとの接合が、金属間化合物による融合となり、熱応力緩和ポストの材料であるはんだとメッキによる再配線回路との間の相互拡散による融合よりも強固になる。
また、上記製造方法において、絶縁層の上面に、熱応力緩和ポストの位置にはんだバンプの下部外周の受容部を設けた絶縁材からなる熱応力サポート層をスクリーン印刷により形成するようにしてもよい。これによりはんだバンプの熱ひずみを一層低減することが可能となるものである。
本発明は上記の如く熱応力緩和ポスト、絶縁層並びにはんだバンプの形成をスクリーン印刷によって行うものであるから、従来の製造方法に比して作業能率を大幅に向上させることができるものである。また、熱応力緩和ポスト上に直接はんだバンプを形成するものであるから、従来の如くランドを形成する必要がない。したがって、この分の作業工程を減らすことができる。
また、熱応力緩和ポストを形成する導電材としてはんだを用いる場合には、はんだバンプとの接合が金属間化合物による融合となり、強固な接合となる。
また、絶縁層の上面に、熱応力緩和ポストの位置にはんだバンプの下部外周の受容部を設けた絶縁材からなる熱応力サポート層をスクリーン印刷により形成するようにした場合には、はんだバンプの熱ひずみを一層低減することができるものである。
本発明を実施するための最良の形態は、熱応力緩和ポスト、絶縁層並びにはんだバンプの形成をスクリーン印刷によって行うことにある。
以下、本発明の実施例について図面を参照しつつ説明する。
図1は本発明によって製造したウエハレベルCSPの断面を示すものである。
図中、1はウエハである。2は前記ウエハ1上に形成した接合パッドであり、金のUBMである。3は前記ウエハ1上にメッキによって形成した再配線回路である。4は前記再配線回路3上に形成したはんだ等の導電材による熱応力緩和ポストであり、加圧式スクリーン印刷機によるスクリーン印刷によって形成している。尚、本実施例では導電材としてはんだを用いている。
5はウエハ1上に形成した絶縁層、6は前記再配線回路3と熱応力緩和ポスト4の周囲に、該熱応力緩和ポスト4の上面を除いて形成したポリイミド等からなる絶縁層である。また該絶縁層6は加圧式スクリーン印刷機によるスクリーン印刷によって形成している。
7は前記熱応力緩和ポスト4上に形成したはんだバンプであり、加圧式スクリーン印刷機によるスクリーン印刷によって形成している。8は前記絶縁層6の上面に形成した、熱応力緩和ポスト4の位置にはんだバンプ7の下部外周の受容部8aを設けた熱応力サポート層である。また、該熱応力サポート層8はポリイミド等の絶縁材からなり、スクリーン印刷によって形成している。
本発明によって製造したウエハレベルCSPの断面図である。 従来方法によって製造したウエハレベルCSPの断面図である。
符号の説明
1 ウエハ
2 接合パッド
3 再配線回路
4 熱応力緩和ポスト
5 絶縁層
6 絶縁層
7 はんだバンプ
8 熱応力サポート層
8a はんだバンプの下部外周の受容部

Claims (3)

  1. ウエハ上にメッキによる再配線回路を形成すると共に該再配線回路上にはんだ等の導電材による熱応力緩和ポストを形成し、これら再配線回路と熱応力緩和ポストの周囲に、該熱応力緩和ポストの上面を除いてポリイミド等からなる絶縁層を形成し、更に前記熱応力緩和ポスト上にはんだバンプを形成するウエハレベルCSPの製造方法であって、前記熱応力緩和ポスト、絶縁層並びにはんだバンプの形成をスクリーン印刷によって行うようになしたことを特徴とするウエハレベルCSPの製造方法。
  2. 熱応力緩和ポストを形成する導電材がはんだである請求項1記載のウエハレベルCSPの製造方法。
  3. 絶縁層の上面に、熱応力緩和ポストの位置にはんだバンプの下部外周の受容部を設けた絶縁材からなる熱応力サポート層をスクリーン印刷により形成してなる請求項1又は2記載のウエハレベルCSPの製造方法。
JP2003325938A 2003-09-18 2003-09-18 ウエハレベルcspの製造方法 Expired - Fee Related JP4360873B2 (ja)

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KR1020040073293A KR100742902B1 (ko) 2003-09-18 2004-09-14 웨이퍼 레벨 csp의 제조방법
US10/939,416 US20050064624A1 (en) 2003-09-18 2004-09-14 Method of manufacturing wafer level chip size package
EP04255574A EP1517369A3 (en) 2003-09-18 2004-09-15 Method of manufacturing wafer level chip size package
MYPI20043805A MY139562A (en) 2003-09-18 2004-09-17 Method of manufacturing wafer level chip size package
CNA2004100781750A CN1604295A (zh) 2003-09-18 2004-09-17 晶片级csp的制造方法
SG200407966-1A SG157220A1 (en) 2003-09-18 2004-09-17 Method of manufacturing wafer level chip size package
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