JP2005093772A - ウエハレベルcspの製造方法 - Google Patents
ウエハレベルcspの製造方法 Download PDFInfo
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Abstract
【解決手段】ウエハ1上にメッキによる再配線回路3を形成すると共に該再配線回路3上にはんだ等の導電材による熱応力緩和ポスト4を形成する。また、これら再配線回路3と熱応力緩和ポスト4の周囲に、該熱応力緩和ポスト4の上面を除いてポリイミド等からなる絶縁層6を形成し、更に前記熱応力緩和ポスト4上にはんだバンプ7を形成する。そしてまた、前記熱応力緩和ポスト4、絶縁層6並びにはんだバンプ7はスクリーン印刷により形成する。
【選択図】図1
Description
図1は本発明によって製造したウエハレベルCSPの断面を示すものである。
2 接合パッド
3 再配線回路
4 熱応力緩和ポスト
5 絶縁層
6 絶縁層
7 はんだバンプ
8 熱応力サポート層
8a はんだバンプの下部外周の受容部
Claims (3)
- ウエハ上にメッキによる再配線回路を形成すると共に該再配線回路上にはんだ等の導電材による熱応力緩和ポストを形成し、これら再配線回路と熱応力緩和ポストの周囲に、該熱応力緩和ポストの上面を除いてポリイミド等からなる絶縁層を形成し、更に前記熱応力緩和ポスト上にはんだバンプを形成するウエハレベルCSPの製造方法であって、前記熱応力緩和ポスト、絶縁層並びにはんだバンプの形成をスクリーン印刷によって行うようになしたことを特徴とするウエハレベルCSPの製造方法。
- 熱応力緩和ポストを形成する導電材がはんだである請求項1記載のウエハレベルCSPの製造方法。
- 絶縁層の上面に、熱応力緩和ポストの位置にはんだバンプの下部外周の受容部を設けた絶縁材からなる熱応力サポート層をスクリーン印刷により形成してなる請求項1又は2記載のウエハレベルCSPの製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003325938A JP4360873B2 (ja) | 2003-09-18 | 2003-09-18 | ウエハレベルcspの製造方法 |
TW093127629A TWI253128B (en) | 2003-09-18 | 2004-09-13 | Method of manufacturing wafer level chip size package |
KR1020040073293A KR100742902B1 (ko) | 2003-09-18 | 2004-09-14 | 웨이퍼 레벨 csp의 제조방법 |
US10/939,416 US20050064624A1 (en) | 2003-09-18 | 2004-09-14 | Method of manufacturing wafer level chip size package |
EP04255574A EP1517369A3 (en) | 2003-09-18 | 2004-09-15 | Method of manufacturing wafer level chip size package |
SG200407966-1A SG157220A1 (en) | 2003-09-18 | 2004-09-17 | Method of manufacturing wafer level chip size package |
MYPI20043805A MY139562A (en) | 2003-09-18 | 2004-09-17 | Method of manufacturing wafer level chip size package |
CNA2004100781750A CN1604295A (zh) | 2003-09-18 | 2004-09-17 | 晶片级csp的制造方法 |
US12/007,406 US20080145973A1 (en) | 2003-09-18 | 2008-01-10 | Method of manufacturing wafer level chip size package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003325938A JP4360873B2 (ja) | 2003-09-18 | 2003-09-18 | ウエハレベルcspの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005093772A true JP2005093772A (ja) | 2005-04-07 |
JP4360873B2 JP4360873B2 (ja) | 2009-11-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003325938A Expired - Fee Related JP4360873B2 (ja) | 2003-09-18 | 2003-09-18 | ウエハレベルcspの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20050064624A1 (ja) |
EP (1) | EP1517369A3 (ja) |
JP (1) | JP4360873B2 (ja) |
KR (1) | KR100742902B1 (ja) |
CN (1) | CN1604295A (ja) |
MY (1) | MY139562A (ja) |
SG (1) | SG157220A1 (ja) |
TW (1) | TWI253128B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009152423A (ja) * | 2007-12-21 | 2009-07-09 | Rohm Co Ltd | 半導体装置 |
US8288210B2 (en) | 2010-06-28 | 2012-10-16 | Samsung Electronics Co., Ltd. | Semiconductor package, electrical and electronic apparatus including the semiconductor package, and method of manufacturing the semiconductor package |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100452377C (zh) * | 2005-12-01 | 2009-01-14 | 联华电子股份有限公司 | 芯片与封装结构 |
KR100713932B1 (ko) * | 2006-03-29 | 2007-05-07 | 주식회사 하이닉스반도체 | 플립 칩 본디드 패키지 |
US10163828B2 (en) * | 2013-11-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and fabricating method thereof |
US9953954B2 (en) * | 2015-12-03 | 2018-04-24 | Mediatek Inc. | Wafer-level chip-scale package with redistribution layer |
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2003
- 2003-09-18 JP JP2003325938A patent/JP4360873B2/ja not_active Expired - Fee Related
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- 2004-09-13 TW TW093127629A patent/TWI253128B/zh not_active IP Right Cessation
- 2004-09-14 KR KR1020040073293A patent/KR100742902B1/ko not_active IP Right Cessation
- 2004-09-14 US US10/939,416 patent/US20050064624A1/en not_active Abandoned
- 2004-09-15 EP EP04255574A patent/EP1517369A3/en not_active Withdrawn
- 2004-09-17 CN CNA2004100781750A patent/CN1604295A/zh active Pending
- 2004-09-17 MY MYPI20043805A patent/MY139562A/en unknown
- 2004-09-17 SG SG200407966-1A patent/SG157220A1/en unknown
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JP2009152423A (ja) * | 2007-12-21 | 2009-07-09 | Rohm Co Ltd | 半導体装置 |
US8288210B2 (en) | 2010-06-28 | 2012-10-16 | Samsung Electronics Co., Ltd. | Semiconductor package, electrical and electronic apparatus including the semiconductor package, and method of manufacturing the semiconductor package |
US8664762B2 (en) | 2010-06-28 | 2014-03-04 | Samsung Electronics Co., Ltd. | Semiconductor package, electrical and electronic apparatus including the semiconductor package, and method of manufacturing the semiconductor package |
Also Published As
Publication number | Publication date |
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EP1517369A2 (en) | 2005-03-23 |
US20080145973A1 (en) | 2008-06-19 |
US20050064624A1 (en) | 2005-03-24 |
TW200522227A (en) | 2005-07-01 |
KR20050028313A (ko) | 2005-03-22 |
EP1517369A3 (en) | 2010-10-13 |
SG157220A1 (en) | 2009-12-29 |
MY139562A (en) | 2009-10-30 |
JP4360873B2 (ja) | 2009-11-11 |
TWI253128B (en) | 2006-04-11 |
KR100742902B1 (ko) | 2007-07-25 |
CN1604295A (zh) | 2005-04-06 |
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