KR100742794B1 - 반도체 웨이퍼 개질용 고정형 연마 용품 - Google Patents

반도체 웨이퍼 개질용 고정형 연마 용품 Download PDF

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Publication number
KR100742794B1
KR100742794B1 KR1020037010726A KR20037010726A KR100742794B1 KR 100742794 B1 KR100742794 B1 KR 100742794B1 KR 1020037010726 A KR1020037010726 A KR 1020037010726A KR 20037010726 A KR20037010726 A KR 20037010726A KR 100742794 B1 KR100742794 B1 KR 100742794B1
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KR
South Korea
Prior art keywords
abrasive
hard
delete delete
abrasive article
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037010726A
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English (en)
Korean (ko)
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KR20030077622A (ko
Inventor
더글라스 피. 궤츠
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20030077622A publication Critical patent/KR20030077622A/ko
Application granted granted Critical
Publication of KR100742794B1 publication Critical patent/KR100742794B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020037010726A 2001-02-15 2001-06-19 반도체 웨이퍼 개질용 고정형 연마 용품 Expired - Fee Related KR100742794B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/784,667 2001-02-15
US09/784,667 US6632129B2 (en) 2001-02-15 2001-02-15 Fixed abrasive article for use in modifying a semiconductor wafer
PCT/US2001/019522 WO2002074490A1 (en) 2001-02-15 2001-06-19 Fixed abrasive article for use in modifying a semiconductor wafer

Publications (2)

Publication Number Publication Date
KR20030077622A KR20030077622A (ko) 2003-10-01
KR100742794B1 true KR100742794B1 (ko) 2007-07-25

Family

ID=25133157

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037010726A Expired - Fee Related KR100742794B1 (ko) 2001-02-15 2001-06-19 반도체 웨이퍼 개질용 고정형 연마 용품

Country Status (8)

Country Link
US (2) US6632129B2 (OSRAM)
EP (1) EP1360034B1 (OSRAM)
JP (1) JP2004524697A (OSRAM)
KR (1) KR100742794B1 (OSRAM)
CN (1) CN1289263C (OSRAM)
AT (1) ATE311958T1 (OSRAM)
DE (1) DE60115710T2 (OSRAM)
WO (1) WO2002074490A1 (OSRAM)

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US7516536B2 (en) * 1999-07-08 2009-04-14 Toho Engineering Kabushiki Kaisha Method of producing polishing pad
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
US7070480B2 (en) * 2001-10-11 2006-07-04 Applied Materials, Inc. Method and apparatus for polishing substrates
US6908366B2 (en) 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US7163444B2 (en) 2003-01-10 2007-01-16 3M Innovative Properties Company Pad constructions for chemical mechanical planarization applications
KR100504941B1 (ko) * 2003-05-09 2005-08-02 매그나칩 반도체 유한회사 화학적 기계적 연마 장치
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6997777B2 (en) * 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmissive region
US6884156B2 (en) * 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
JP4484466B2 (ja) * 2003-07-10 2010-06-16 パナソニック株式会社 研磨方法およびその研磨方法に用いる粘弾性ポリッシャー
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US20050054277A1 (en) * 2003-09-04 2005-03-10 Teng-Chun Tsai Polishing pad and method of polishing wafer
US8066552B2 (en) 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
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US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
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US7618306B2 (en) * 2005-09-22 2009-11-17 3M Innovative Properties Company Conformable abrasive articles and methods of making and using the same
KR100882045B1 (ko) * 2006-02-15 2009-02-09 어플라이드 머티어리얼스, 인코포레이티드 그루브형 서브패드를 구비한 폴리싱 장치
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US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
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TWI387508B (zh) * 2008-05-15 2013-03-01 3M Innovative Properties Co 具有終點窗孔之拋光墊及使用其之系統及方法
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
US8662962B2 (en) 2008-06-30 2014-03-04 3M Innovative Properties Company Sandpaper with non-slip coating layer and method of using
JP5809053B2 (ja) * 2008-07-03 2015-11-10 スリーエム イノベイティブ プロパティズ カンパニー 固定研磨粒子及びそれから作製される物品
EP2323808B1 (en) * 2008-07-18 2015-09-30 3M Innovative Properties Company Polishing pad with floating elements and method of making and using the same
KR101007134B1 (ko) * 2009-06-05 2011-01-10 엘지이노텍 주식회사 조명 장치
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DE102009030294B4 (de) * 2009-06-24 2013-04-25 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
CN102686361A (zh) * 2009-12-30 2012-09-19 3M创新有限公司 填充有机颗粒的抛光垫及其制造和使用方法
US9205530B2 (en) 2010-07-07 2015-12-08 Seagate Technology Llc Lapping a workpiece
JP2014508650A (ja) * 2011-01-26 2014-04-10 スリーエム イノベイティブ プロパティズ カンパニー 複製されたミクロ構造を有する裏材を備える研磨物品、及びこれを使用する方法
CN102672548A (zh) * 2011-11-08 2012-09-19 刘广庆 一种有机涂层研磨工艺
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
JP6279309B2 (ja) * 2013-12-20 2018-02-14 スリーエム イノベイティブ プロパティズ カンパニー 研磨用クッション、研磨装置、研磨方法、及び当該研磨方法により研磨された対象物を含む物品
KR20160147917A (ko) 2014-05-02 2016-12-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 불연속된 구조화된 연마 용품 및 작업편의 연마 방법
KR102394677B1 (ko) * 2014-05-21 2022-05-09 후지보 홀딩스 가부시키가이샤 연마 패드 및 그의 제조 방법
CN106181652A (zh) * 2015-05-08 2016-12-07 蓝思科技股份有限公司 磨机的磨皮开槽方法及修复弯片玻璃的方法
KR102040144B1 (ko) * 2016-01-08 2019-11-04 반도 카가쿠 가부시키가이샤 연마재
US10259099B2 (en) * 2016-08-04 2019-04-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tapering method for poromeric polishing pad
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
TWI621501B (zh) * 2017-01-06 2018-04-21 三芳化學工業股份有限公司 研磨墊及研磨裝置
JP6883475B2 (ja) * 2017-06-06 2021-06-09 株式会社荏原製作所 研磨テーブル及びこれを備える研磨装置
CN112154377B (zh) * 2018-05-22 2024-12-03 Asml控股股份有限公司 用于原位夹具表面粗糙化的装置和方法
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Also Published As

Publication number Publication date
EP1360034A1 (en) 2003-11-12
KR20030077622A (ko) 2003-10-01
JP2004524697A (ja) 2004-08-12
DE60115710D1 (de) 2006-01-12
WO2002074490A1 (en) 2002-09-26
DE60115710T2 (de) 2006-08-31
CN1289263C (zh) 2006-12-13
US20020111120A1 (en) 2002-08-15
ATE311958T1 (de) 2005-12-15
EP1360034B1 (en) 2005-12-07
CN1489508A (zh) 2004-04-14
US6632129B2 (en) 2003-10-14
US7329171B2 (en) 2008-02-12
US20040072506A1 (en) 2004-04-15

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