KR100742240B1 - 과깨짐 형성 단계를 포함하는 박막의 전달 방법 - Google Patents

과깨짐 형성 단계를 포함하는 박막의 전달 방법 Download PDF

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Publication number
KR100742240B1
KR100742240B1 KR1020027001366A KR20027001366A KR100742240B1 KR 100742240 B1 KR100742240 B1 KR 100742240B1 KR 1020027001366 A KR1020027001366 A KR 1020027001366A KR 20027001366 A KR20027001366 A KR 20027001366A KR 100742240 B1 KR100742240 B1 KR 100742240B1
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KR
South Korea
Prior art keywords
thin film
source substrate
film
thickness
forming
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KR1020027001366A
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English (en)
Korean (ko)
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KR20020085868A (ko
Inventor
라갸흐크리스뗄르
수비알랭
브뤼엘미쉘
아스빠르베흐나르
Original Assignee
꼼미사리아 아 레네르지 아토미끄
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Publication of KR20020085868A publication Critical patent/KR20020085868A/ko
Application granted granted Critical
Publication of KR100742240B1 publication Critical patent/KR100742240B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020027001366A 1999-08-04 2000-08-03 과깨짐 형성 단계를 포함하는 박막의 전달 방법 KR100742240B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR99/10121 1999-08-04
FR9910121A FR2797347B1 (fr) 1999-08-04 1999-08-04 Procede de transfert d'une couche mince comportant une etape de surfragililisation

Publications (2)

Publication Number Publication Date
KR20020085868A KR20020085868A (ko) 2002-11-16
KR100742240B1 true KR100742240B1 (ko) 2007-07-24

Family

ID=9548879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027001366A KR100742240B1 (ko) 1999-08-04 2000-08-03 과깨짐 형성 단계를 포함하는 박막의 전달 방법

Country Status (7)

Country Link
EP (1) EP1203403A1 (fr)
JP (1) JP2003506892A (fr)
KR (1) KR100742240B1 (fr)
FR (1) FR2797347B1 (fr)
MY (1) MY137329A (fr)
TW (1) TW457565B (fr)
WO (1) WO2001011667A1 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
JP4277481B2 (ja) * 2002-05-08 2009-06-10 日本電気株式会社 半導体基板の製造方法、半導体装置の製造方法
FR2845518B1 (fr) * 2002-10-07 2005-10-14 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
FR2845517B1 (fr) * 2002-10-07 2005-05-06 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
FR2846788B1 (fr) * 2002-10-30 2005-06-17 Procede de fabrication de substrats demontables
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
JP4879737B2 (ja) * 2004-01-29 2012-02-22 ソワテク 半導体層の分離方法
EP1605504B1 (fr) * 2004-06-10 2011-05-25 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé pour la fabrication d'une tranche SOI
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
CN101663733B (zh) 2007-04-20 2013-02-27 株式会社半导体能源研究所 制造绝缘体上硅衬底和半导体器件的方法
JP5367330B2 (ja) 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
JP5339785B2 (ja) * 2008-06-03 2013-11-13 信越半導体株式会社 貼り合わせウェーハの製造方法
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8524572B2 (en) * 2011-10-06 2013-09-03 Micron Technology, Inc. Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions
US9281233B2 (en) * 2012-12-28 2016-03-08 Sunedison Semiconductor Limited Method for low temperature layer transfer in the preparation of multilayer semiconductor devices
FR3055063B1 (fr) * 2016-08-11 2018-08-31 Soitec Procede de transfert d'une couche utile
FR3108787B1 (fr) * 2020-03-31 2022-04-01 Commissariat Energie Atomique Procédé basse température de transfert et de guérison d’une couche semi-conductrice

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050628A (ja) * 1996-05-15 1998-02-20 Commiss Energ Atom 半導体材料薄層の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
CN1146973C (zh) * 1997-05-12 2004-04-21 硅源公司 受控切分处理
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050628A (ja) * 1996-05-15 1998-02-20 Commiss Energ Atom 半導体材料薄層の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Also Published As

Publication number Publication date
TW457565B (en) 2001-10-01
EP1203403A1 (fr) 2002-05-08
MY137329A (en) 2009-01-30
KR20020085868A (ko) 2002-11-16
JP2003506892A (ja) 2003-02-18
FR2797347B1 (fr) 2001-11-23
FR2797347A1 (fr) 2001-02-09
WO2001011667A1 (fr) 2001-02-15

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