KR100738366B1 - 반도체 집적회로장치 및 그 제조방법 - Google Patents

반도체 집적회로장치 및 그 제조방법 Download PDF

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KR100738366B1
KR100738366B1 KR1020010003573A KR20010003573A KR100738366B1 KR 100738366 B1 KR100738366 B1 KR 100738366B1 KR 1020010003573 A KR1020010003573 A KR 1020010003573A KR 20010003573 A KR20010003573 A KR 20010003573A KR 100738366 B1 KR100738366 B1 KR 100738366B1
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South Korea
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region
conductivity type
semiconductor
semiconductor region
diode
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English (en)
Korean (ko)
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KR20010078051A (ko
Inventor
미나미신이치
카미가키요시아키
야스오카히데키
오와다후쿠오
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020010003573A 2000-01-28 2001-01-22 반도체 집적회로장치 및 그 제조방법 Expired - Fee Related KR100738366B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000020920A JP4149109B2 (ja) 2000-01-28 2000-01-28 半導体集積回路装置およびその製造方法
JP2000-20920 2000-01-28

Publications (2)

Publication Number Publication Date
KR20010078051A KR20010078051A (ko) 2001-08-20
KR100738366B1 true KR100738366B1 (ko) 2007-07-12

Family

ID=18547400

Family Applications (1)

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KR1020010003573A Expired - Fee Related KR100738366B1 (ko) 2000-01-28 2001-01-22 반도체 집적회로장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US6803644B2 (enExample)
JP (1) JP4149109B2 (enExample)
KR (1) KR100738366B1 (enExample)
TW (1) TW573365B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101334A (ja) 2003-09-25 2005-04-14 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6977195B1 (en) * 2004-08-16 2005-12-20 Fasl, Llc Test structure for characterizing junction leakage current
KR100644895B1 (ko) 2004-12-15 2006-11-15 엘지전자 주식회사 자기정렬방식에 의한 양방향문턱전압 특성을 갖는제너다이오드의 제조방법
KR100861294B1 (ko) * 2006-02-24 2008-10-01 주식회사 하이닉스반도체 반도체 회로용 정전기 보호소자
JP2008218564A (ja) 2007-03-01 2008-09-18 Matsushita Electric Ind Co Ltd 半導体装置
US7698678B2 (en) * 2007-05-30 2010-04-13 International Business Machines Corporation Methodology for automated design of vertical parallel plate capacitors
US7876547B2 (en) * 2007-05-30 2011-01-25 International Business Machines Corporation Vertical parallel plate capacitor structures
US20090102016A1 (en) * 2007-10-22 2009-04-23 International Business Machines Corporation Design structure incorporating vertical parallel plate capacitor structures
JP5255305B2 (ja) 2008-03-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
US20130075747A1 (en) * 2011-09-23 2013-03-28 Robert J. Purtell Esd protection using low leakage zener diodes formed with microwave radiation
US12501632B2 (en) * 2022-12-15 2025-12-16 Nxp B.V. Semiconductor device with improved mechanical stress resistance

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312428A (ja) * 1994-05-18 1995-11-28 Rohm Co Ltd ツェナーダイオード
JPH0856002A (ja) * 1994-08-12 1996-02-27 Sony Corp ダイオード
JPH08255920A (ja) * 1994-12-30 1996-10-01 Sgs Thomson Microelectron Srl バイポーラ接合デバイス
US5869882A (en) * 1994-09-30 1999-02-09 Texas Instruments Incorporated Zener diode structure with high reverse breakdown voltage

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS6048765B2 (ja) * 1977-12-19 1985-10-29 日本電気株式会社 定電圧半導体集積回路
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
US4590664A (en) * 1983-07-29 1986-05-27 Harris Corporation Method of fabricating low noise reference diodes and transistors
US4646114A (en) * 1984-12-31 1987-02-24 Raytheon Company Integrated circuit Zener diode
JPS62110435A (ja) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト 加入者線の過電圧保護用集積回路装置
JPS6366974A (ja) * 1986-09-08 1988-03-25 Hitachi Ltd 半導体集積回路装置
JPS6459949A (en) 1987-08-31 1989-03-07 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPH03108376A (ja) * 1989-09-21 1991-05-08 New Japan Radio Co Ltd 埋込型ツェナーダイオードおよびその製法
US5027165A (en) * 1990-05-22 1991-06-25 Maxim Integrated Products Buried zener diode
US5929502A (en) * 1992-01-16 1999-07-27 Harris Corporation Level shifter stage with punch through diode
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
JP3353388B2 (ja) * 1993-06-23 2002-12-03 株式会社デンソー 電力用半導体装置
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
US5691554A (en) * 1995-12-15 1997-11-25 Motorola, Inc. Protection circuit
US6114872A (en) * 1996-05-31 2000-09-05 Nippon Steel Corporation Differential input circuit
JP3108376B2 (ja) 1996-07-04 2000-11-13 沖電気工業株式会社 感熱記録媒体用のジアゾニウム塩

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312428A (ja) * 1994-05-18 1995-11-28 Rohm Co Ltd ツェナーダイオード
JPH0856002A (ja) * 1994-08-12 1996-02-27 Sony Corp ダイオード
US5869882A (en) * 1994-09-30 1999-02-09 Texas Instruments Incorporated Zener diode structure with high reverse breakdown voltage
JPH08255920A (ja) * 1994-12-30 1996-10-01 Sgs Thomson Microelectron Srl バイポーラ接合デバイス

Also Published As

Publication number Publication date
US7064090B2 (en) 2006-06-20
US20010013611A1 (en) 2001-08-16
US6803644B2 (en) 2004-10-12
TW573365B (en) 2004-01-21
KR20010078051A (ko) 2001-08-20
US20050032298A1 (en) 2005-02-10
JP4149109B2 (ja) 2008-09-10
JP2001210839A (ja) 2001-08-03

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