KR100733473B1 - 비트라인 오버 드라이빙 구조를 가진 반도체 메모리 소자및 그 구동방법 - Google Patents

비트라인 오버 드라이빙 구조를 가진 반도체 메모리 소자및 그 구동방법 Download PDF

Info

Publication number
KR100733473B1
KR100733473B1 KR1020050132586A KR20050132586A KR100733473B1 KR 100733473 B1 KR100733473 B1 KR 100733473B1 KR 1020050132586 A KR1020050132586 A KR 1020050132586A KR 20050132586 A KR20050132586 A KR 20050132586A KR 100733473 B1 KR100733473 B1 KR 100733473B1
Authority
KR
South Korea
Prior art keywords
voltage
overdriving
driving
signal
bit line
Prior art date
Application number
KR1020050132586A
Other languages
English (en)
Korean (ko)
Other versions
KR20070035927A (ko
Inventor
강길옥
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to TW095134512A priority Critical patent/TWI303440B/zh
Priority to CN200610159397A priority patent/CN100594555C/zh
Priority to US11/528,339 priority patent/US7599243B2/en
Publication of KR20070035927A publication Critical patent/KR20070035927A/ko
Application granted granted Critical
Publication of KR100733473B1 publication Critical patent/KR100733473B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1020050132586A 2005-09-28 2005-12-28 비트라인 오버 드라이빙 구조를 가진 반도체 메모리 소자및 그 구동방법 KR100733473B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095134512A TWI303440B (en) 2005-09-28 2006-09-19 Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device
CN200610159397A CN100594555C (zh) 2005-09-28 2006-09-28 过驱动控制电路的感应放大器及其控制方法
US11/528,339 US7599243B2 (en) 2005-09-28 2006-09-28 Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050090837 2005-09-28
KR20050090837 2005-09-28

Publications (2)

Publication Number Publication Date
KR20070035927A KR20070035927A (ko) 2007-04-02
KR100733473B1 true KR100733473B1 (ko) 2007-06-29

Family

ID=37959254

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050132586A KR100733473B1 (ko) 2005-09-28 2005-12-28 비트라인 오버 드라이빙 구조를 가진 반도체 메모리 소자및 그 구동방법

Country Status (2)

Country Link
KR (1) KR100733473B1 (zh)
CN (1) CN100594555C (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102970005B (zh) * 2012-09-25 2015-03-11 苏州兆芯半导体科技有限公司 电源恢复电压探测器
KR20160115484A (ko) * 2015-03-27 2016-10-06 에스케이하이닉스 주식회사 전원 구동 회로 및 이를 포함하는 반도체 장치
KR102413984B1 (ko) * 2017-11-23 2022-06-29 에스케이하이닉스 주식회사 반도체 메모리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990069267A (ko) * 1998-02-06 1999-09-06 구본준 센스앰프 오버드라이빙 전압제어 회로
KR20020053491A (ko) * 2000-12-27 2002-07-05 박종섭 센스 앰프 오버드라이빙 제어회로
KR20020057280A (ko) * 2000-12-30 2002-07-11 박종섭 전류효율과 안정성을 향상시킨 센스앰프 오버드라이브 회로
KR20030047013A (ko) * 2001-12-07 2003-06-18 주식회사 하이닉스반도체 메모리 장치 및 구동방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990069267A (ko) * 1998-02-06 1999-09-06 구본준 센스앰프 오버드라이빙 전압제어 회로
KR20020053491A (ko) * 2000-12-27 2002-07-05 박종섭 센스 앰프 오버드라이빙 제어회로
KR20020057280A (ko) * 2000-12-30 2002-07-11 박종섭 전류효율과 안정성을 향상시킨 센스앰프 오버드라이브 회로
KR20030047013A (ko) * 2001-12-07 2003-06-18 주식회사 하이닉스반도체 메모리 장치 및 구동방법

Also Published As

Publication number Publication date
KR20070035927A (ko) 2007-04-02
CN1941194A (zh) 2007-04-04
CN100594555C (zh) 2010-03-17

Similar Documents

Publication Publication Date Title
JP4993912B2 (ja) 半導体メモリ素子及び半導体メモリ素子のビットライン感知増幅器の駆動方法
KR100541367B1 (ko) 오버드라이빙 구조를 가진 반도체 메모리 소자
KR100567916B1 (ko) 반도체 메모리 소자의 전원 공급 장치 및 방법
US6778460B1 (en) Semiconductor memory device and method for generation of core voltage
US7567469B2 (en) Over driving pulse generator
US7800962B2 (en) Bit line control circuit for semiconductor memory device
KR100571648B1 (ko) 반도체 메모리 소자의 오버 드라이버 제어신호 생성회로
KR100402246B1 (ko) 반도체 메모리 소자 및 그의 쓰기 구동 방법
US7876635B2 (en) Sense amplifier driving control circuit and method
KR100733473B1 (ko) 비트라인 오버 드라이빙 구조를 가진 반도체 메모리 소자및 그 구동방법
KR100780633B1 (ko) 반도체 메모리 소자의 오버 드라이버 제어신호 생성회로
US7599243B2 (en) Sense amplifier over driver control circuit and method for controlling sense amplifier of semiconductor device
JP5580179B2 (ja) 半導体装置
US6928006B2 (en) Semiconductor memory device capable of reducing noise during operation thereof
KR100652797B1 (ko) 반도체 메모리 소자의 센스앰프 오버드라이버 제어회로 및그 제어 방법
KR100668813B1 (ko) 센스 앰프 오버 드라이브 회로
US6456543B1 (en) Data input/output circuit for semiconductor memory device
US20180005675A1 (en) Input circuit and semiconductor device including the same
KR100693782B1 (ko) 센스앰프 드라이버
KR100615087B1 (ko) 라이트 시간을 감소시킬 수 있는 반도체 메모리 장치
KR100728960B1 (ko) 메모리 장치용 감지 증폭기의 구동 장치
KR100851920B1 (ko) 반도체 메모리 소자
KR100469153B1 (ko) 강유전체 메모리 장치
KR100780634B1 (ko) 반도체 메모리 소자의 오버 드라이버 제어신호 생성회로

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120524

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee