KR100717689B1 - 노광장치 및 디바이스제조방법 - Google Patents

노광장치 및 디바이스제조방법 Download PDF

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Publication number
KR100717689B1
KR100717689B1 KR1020050001019A KR20050001019A KR100717689B1 KR 100717689 B1 KR100717689 B1 KR 100717689B1 KR 1020050001019 A KR1020050001019 A KR 1020050001019A KR 20050001019 A KR20050001019 A KR 20050001019A KR 100717689 B1 KR100717689 B1 KR 100717689B1
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South Korea
Prior art keywords
temperature
substrate
liquid
optical system
exposure apparatus
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Expired - Fee Related
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KR1020050001019A
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English (en)
Korean (ko)
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KR20050072685A (ko
Inventor
도키타도시노부
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20050072685A publication Critical patent/KR20050072685A/ko
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Publication of KR100717689B1 publication Critical patent/KR100717689B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
KR1020050001019A 2004-01-07 2005-01-06 노광장치 및 디바이스제조방법 Expired - Fee Related KR100717689B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00002058 2004-01-07
JP2004002058A JP4429023B2 (ja) 2004-01-07 2004-01-07 露光装置及びデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070021718A Division KR100727516B1 (ko) 2004-01-07 2007-03-06 노광장치 및 디바이스 제조방법

Publications (2)

Publication Number Publication Date
KR20050072685A KR20050072685A (ko) 2005-07-12
KR100717689B1 true KR100717689B1 (ko) 2007-05-11

Family

ID=34709026

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050001019A Expired - Fee Related KR100717689B1 (ko) 2004-01-07 2005-01-06 노광장치 및 디바이스제조방법
KR1020070021718A Expired - Fee Related KR100727516B1 (ko) 2004-01-07 2007-03-06 노광장치 및 디바이스 제조방법

Family Applications After (1)

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KR1020070021718A Expired - Fee Related KR100727516B1 (ko) 2004-01-07 2007-03-06 노광장치 및 디바이스 제조방법

Country Status (5)

Country Link
US (1) US7528930B2 (enExample)
JP (1) JP4429023B2 (enExample)
KR (2) KR100717689B1 (enExample)
CN (2) CN100507719C (enExample)
TW (1) TWI308673B (enExample)

Families Citing this family (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10257766A1 (de) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101921572B1 (ko) 2003-02-26 2018-11-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
WO2004086470A1 (ja) * 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
EP1612850B1 (en) * 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
KR101177331B1 (ko) * 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
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EP1614000B1 (en) 2003-04-17 2012-01-18 Nikon Corporation Immersion lithographic apparatus
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US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
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US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
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US7839483B2 (en) 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8068208B2 (en) * 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8760615B2 (en) 2007-05-24 2014-06-24 Asml Netherlands B.V. Lithographic apparatus having encoder type position sensor system
US8687166B2 (en) * 2007-05-24 2014-04-01 Asml Netherlands B.V. Lithographic apparatus having an encoder position sensor system
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI450047B (zh) 2007-07-13 2014-08-21 瑪波微影Ip公司 微影系統、夾緊方法及晶圓台
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
JP5369443B2 (ja) 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
NL1036835A1 (nl) * 2008-05-08 2009-11-11 Asml Netherlands Bv Lithographic Apparatus and Method.
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置の動作方法
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
WO2011090690A1 (en) * 2009-12-28 2011-07-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
SG188036A1 (en) 2011-08-18 2013-03-28 Asml Netherlands Bv Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
CN104081285B (zh) 2012-02-03 2017-06-13 Asml荷兰有限公司 衬底保持器和制造衬底保持器的方法
CN107300835B (zh) * 2012-05-17 2019-02-15 Asml荷兰有限公司 热调节单元、光刻设备以及器件制造方法
WO2015043890A1 (en) 2013-09-27 2015-04-02 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
NL2017576A (en) 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
JP7465680B2 (ja) * 2019-05-07 2024-04-11 東京エレクトロン株式会社 液処理装置及び液処理装置の制御方法
CN113525029B (zh) * 2021-07-13 2022-08-02 恒大恒驰新能源汽车研究院(上海)有限公司 车窗玻璃显示系统及车辆
US12368129B2 (en) * 2021-08-30 2025-07-22 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature controllable bonder equipment for substrate bonding

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
KR19990034784A (ko) * 1997-10-30 1999-05-15 윤종용 노광장비의 척부
KR20050009209A (ko) * 2003-07-16 2005-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050046626A (ko) * 2003-11-13 2005-05-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050063730A (ko) * 2003-12-22 2005-06-28 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4825247A (en) * 1987-02-16 1989-04-25 Canon Kabushiki Kaisha Projection exposure apparatus
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5883704A (en) * 1995-08-07 1999-03-16 Nikon Corporation Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2001118783A (ja) * 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP3531914B2 (ja) * 2000-04-14 2004-05-31 キヤノン株式会社 光学装置、露光装置及びデバイス製造方法
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2003195476A (ja) * 2001-12-27 2003-07-09 Toshiba Corp パターン形成装置およびパターン形成方法
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG2014015184A (en) * 2003-04-10 2015-06-29 Nippon Kogaku Kk Environmental system including vacuum scavange for an immersion lithography apparatus
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005071491A2 (en) * 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303114A (ja) * 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
KR19990034784A (ko) * 1997-10-30 1999-05-15 윤종용 노광장비의 척부
KR20050009209A (ko) * 2003-07-16 2005-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050046626A (ko) * 2003-11-13 2005-05-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
KR20050063730A (ko) * 2003-12-22 2005-06-28 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법

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CN100507719C (zh) 2009-07-01
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