KR100708322B1 - 펄스화된 ｒｆ 플라즈마를 이용하는 ｔｅｏｓ 산화물의 증착 - Google Patents

펄스화된 ｒｆ 플라즈마를 이용하는 ｔｅｏｓ 산화물의 증착 Download PDF

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KR100708322B1
KR100708322B1 KR1020010018268A KR20010018268A KR100708322B1 KR 100708322 B1 KR100708322 B1 KR 100708322B1 KR 1020010018268 A KR1020010018268 A KR 1020010018268A KR 20010018268 A KR20010018268 A KR 20010018268A KR 100708322 B1 KR100708322 B1 KR 100708322B1
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silicon
power
film
teos
deposition
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KR1020010018268A
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Korean (ko)
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KR20010098467A (ko
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하루히로에이치. 고토
타카코 타케하라
칼에이. 소렌선
윌리암알. 하쉬바거
캄에스. 로우
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020010018268A 2000-04-06 2001-04-06 펄스화된 ｒｆ 플라즈마를 이용하는 ｔｅｏｓ 산화물의 증착 Expired - Fee Related KR100708322B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/544,728 US6451390B1 (en) 2000-04-06 2000-04-06 Deposition of TEOS oxide using pulsed RF plasma
US09/544,728 2000-04-06

Publications (2)

Publication Number Publication Date
KR20010098467A KR20010098467A (ko) 2001-11-08
KR100708322B1 true KR100708322B1 (ko) 2007-04-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010018268A Expired - Fee Related KR100708322B1 (ko) 2000-04-06 2001-04-06 펄스화된 ｒｆ 플라즈마를 이용하는 ｔｅｏｓ 산화물의 증착

Country Status (4)

Country Link
US (2) US6451390B1 (https=)
JP (2) JP2002060945A (https=)
KR (1) KR100708322B1 (https=)
TW (1) TWI225106B (https=)

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US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
WO2004044039A2 (en) * 2002-11-12 2004-05-27 Dow Global Technologies Inc. Process and apparatus for depositing plasma coating onto a container
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US20070099417A1 (en) * 2005-10-28 2007-05-03 Applied Materials, Inc. Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop
US8025932B2 (en) * 2007-02-21 2011-09-27 Colorado School Of Mines Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition
US20090325391A1 (en) * 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US9496405B2 (en) * 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
TWI501307B (zh) * 2013-07-31 2015-09-21 盛美半導體設備（上海）有限公司 Pulse electrochemical polishing method and device
US9887277B2 (en) * 2015-01-23 2018-02-06 Applied Materials, Inc. Plasma treatment on metal-oxide TFT
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
CN111303638A (zh) * 2020-04-17 2020-06-19 广东思泉新材料股份有限公司 一种导热硅橡胶垫片的制备方法
CN116043190A (zh) * 2022-11-02 2023-05-02 长鑫存储技术有限公司 二氧化硅薄膜及其预沉积方法、半导体结构

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DE59209786D1 (de) * 1991-09-20 2000-02-03 Balzers Hochvakuum Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage
JPH086181B2 (ja) 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
JPH0794421A (ja) 1993-09-21 1995-04-07 Anelva Corp アモルファスシリコン薄膜の製造方法
JPH0817744A (ja) * 1994-06-29 1996-01-19 Sony Corp ヘリコン波プラズマ装置およびこれを用いたプラズマｃｖｄ方法
JPH08181276A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 半導体装置の製造方法
US5618758A (en) 1995-02-17 1997-04-08 Sharp Kabushiki Kaisha Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
JP3388651B2 (ja) * 1995-04-07 2003-03-24 株式会社アルバック 絶縁膜の形成方法
JPH098030A (ja) * 1995-06-23 1997-01-10 Sony Corp シリコン系酸化膜の製造方法
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor

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Appl. Phys. Lett., 53(14):1263-5(1988)
미국 특허 제 5,437,895 호
미국 특허 제 5,618,758 호

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Publication number Publication date
JP2002060945A (ja) 2002-02-28
TWI225106B (en) 2004-12-11
JP2011068999A (ja) 2011-04-07
JP5323804B2 (ja) 2013-10-23
KR20010098467A (ko) 2001-11-08
US6451390B1 (en) 2002-09-17
US20020192475A1 (en) 2002-12-19

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