JP2002060945A - パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積 - Google Patents

パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積

Info

Publication number
JP2002060945A
JP2002060945A JP2001109076A JP2001109076A JP2002060945A JP 2002060945 A JP2002060945 A JP 2002060945A JP 2001109076 A JP2001109076 A JP 2001109076A JP 2001109076 A JP2001109076 A JP 2001109076A JP 2002060945 A JP2002060945 A JP 2002060945A
Authority
JP
Japan
Prior art keywords
silicon dioxide
plasma
film
substrate
teos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001109076A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002060945A5 (https=
Inventor
Haruhiro H Goto
エイチ． ゴトウ ハルヒロ
Takako Takehara
タケハラ タカコ
A Sorensen Carl
エー． ソレンセン カール
R Hirschberger William
アール． ハーシュバーガー ウィリアム
Kam S Law
エス． ロウ カム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002060945A publication Critical patent/JP2002060945A/ja
Publication of JP2002060945A5 publication Critical patent/JP2002060945A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001109076A 2000-04-06 2001-04-06 パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積 Pending JP2002060945A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/544,728 US6451390B1 (en) 2000-04-06 2000-04-06 Deposition of TEOS oxide using pulsed RF plasma
US09/544728 2000-04-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010288412A Division JP5323804B2 (ja) 2000-04-06 2010-12-24 パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積

Publications (2)

Publication Number Publication Date
JP2002060945A true JP2002060945A (ja) 2002-02-28
JP2002060945A5 JP2002060945A5 (https=) 2006-04-20

Family

ID=24173335

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001109076A Pending JP2002060945A (ja) 2000-04-06 2001-04-06 パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積
JP2010288412A Expired - Fee Related JP5323804B2 (ja) 2000-04-06 2010-12-24 パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010288412A Expired - Fee Related JP5323804B2 (ja) 2000-04-06 2010-12-24 パルスｒｆプラズマを用いたｔｅｏｓ酸化物の堆積

Country Status (4)

Country Link
US (2) US6451390B1 (https=)
JP (2) JP2002060945A (https=)
KR (1) KR100708322B1 (https=)
TW (1) TWI225106B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962732B2 (en) * 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
WO2004044039A2 (en) * 2002-11-12 2004-05-27 Dow Global Technologies Inc. Process and apparatus for depositing plasma coating onto a container
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US20070099417A1 (en) * 2005-10-28 2007-05-03 Applied Materials, Inc. Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop
US8025932B2 (en) * 2007-02-21 2011-09-27 Colorado School Of Mines Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition
US20090325391A1 (en) * 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US9496405B2 (en) * 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
TWI501307B (zh) * 2013-07-31 2015-09-21 盛美半導體設備（上海）有限公司 Pulse electrochemical polishing method and device
US9887277B2 (en) * 2015-01-23 2018-02-06 Applied Materials, Inc. Plasma treatment on metal-oxide TFT
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide
KR102216380B1 (ko) * 2016-12-08 2021-02-17 주식회사 원익아이피에스 반도체 소자의 패터닝 방법
CN111303638A (zh) * 2020-04-17 2020-06-19 广东思泉新材料股份有限公司 一种导热硅橡胶垫片的制备方法
CN116043190A (zh) * 2022-11-02 2023-05-02 长鑫存储技术有限公司 二氧化硅薄膜及其预沉积方法、半导体结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817744A (ja) * 1994-06-29 1996-01-19 Sony Corp ヘリコン波プラズマ装置およびこれを用いたプラズマｃｖｄ方法
JPH08279505A (ja) * 1995-04-07 1996-10-22 Ulvac Japan Ltd 絶縁膜の形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8516537D0 (en) 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
DE59209786D1 (de) * 1991-09-20 2000-02-03 Balzers Hochvakuum Verfahren zur Schutzbeschichtung von Substraten sowie Beschichtungsanlage
JPH086181B2 (ja) 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
JPH0794421A (ja) 1993-09-21 1995-04-07 Anelva Corp アモルファスシリコン薄膜の製造方法
JPH08181276A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 半導体装置の製造方法
US5618758A (en) 1995-02-17 1997-04-08 Sharp Kabushiki Kaisha Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
JPH098030A (ja) * 1995-06-23 1997-01-10 Sony Corp シリコン系酸化膜の製造方法
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817744A (ja) * 1994-06-29 1996-01-19 Sony Corp ヘリコン波プラズマ装置およびこれを用いたプラズマｃｖｄ方法
JPH08279505A (ja) * 1995-04-07 1996-10-22 Ulvac Japan Ltd 絶縁膜の形成方法

Also Published As

Publication number Publication date
TWI225106B (en) 2004-12-11
JP2011068999A (ja) 2011-04-07
JP5323804B2 (ja) 2013-10-23
KR20010098467A (ko) 2001-11-08
US6451390B1 (en) 2002-09-17
KR100708322B1 (ko) 2007-04-17
US20020192475A1 (en) 2002-12-19

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