KR100704273B1 - 아이티오 마이크로파 소결방법 - Google Patents
아이티오 마이크로파 소결방법 Download PDFInfo
- Publication number
- KR100704273B1 KR100704273B1 KR1020050072894A KR20050072894A KR100704273B1 KR 100704273 B1 KR100704273 B1 KR 100704273B1 KR 1020050072894 A KR1020050072894 A KR 1020050072894A KR 20050072894 A KR20050072894 A KR 20050072894A KR 100704273 B1 KR100704273 B1 KR 100704273B1
- Authority
- KR
- South Korea
- Prior art keywords
- sintering
- microwave
- ito
- sputtering target
- manufacturing
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
- 산화 인듐에 산화주석을 혼합하는 분말제조 단계와,냉간 등방향 정수압 성형을 행하는 성형 단계와,ITO화 하기 위하여 산소분위기에서 1500℃~1600℃로 소결을 행하는 소결 단계와,ITO 스퍼터링 타겟의 증착 효율을 높이기 위한 표면 연마 및 세정 처리가 이루어지는 가공 및 후처리 단계로 구성되는 ITO(Indium Tin Oxide, 산화인듐주석) 스퍼터링 타겟(sputtering target)의 제조방법에 있어서,상기 성형 단계와 상기 소결 단계 사이에, 상기 성형 단계에서 성형된 성형체에 마이크로파를 투사하여 가열함으로써, 상기 마이크로파의 파장에 의한 진동(vibration) 에너지의 발생으로 상기 성형체 내의 기공을 제거하는 마이크로파 가소결 단계를 포함하여 구성된 것을 특징으로 하는 ITO 스퍼터링 타겟의 제조방법.
- 제 1항에 있어서,상기 분말제조 단계에서, 상기 혼합되는 분말은 주석 산화물이 10Wt% 함유된 인듐 산화물계이며,상기 마이크로파 가소결 단계는 소결 승온 온도가 150℃/hr인 것을 특징으로 하는 ITO 스퍼터링 타겟의 제조방법.
- 제 1항에 있어서,상기 마이크로파 가소결 단계는 200℃~1000℃ 구간에서 2.45GHz, 700W의 마이크로파를 투사하도록 구성된 것을 특징으로 하는 ITO 스퍼터링 타겟의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050072894A KR100704273B1 (ko) | 2005-08-09 | 2005-08-09 | 아이티오 마이크로파 소결방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050072894A KR100704273B1 (ko) | 2005-08-09 | 2005-08-09 | 아이티오 마이크로파 소결방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070019050A KR20070019050A (ko) | 2007-02-15 |
KR100704273B1 true KR100704273B1 (ko) | 2007-04-06 |
Family
ID=41624559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050072894A KR100704273B1 (ko) | 2005-08-09 | 2005-08-09 | 아이티오 마이크로파 소결방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100704273B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080210555A1 (en) * | 2007-03-01 | 2008-09-04 | Heraeus Inc. | High density ceramic and cermet sputtering targets by microwave sintering |
KR101322595B1 (ko) * | 2011-07-21 | 2013-10-29 | 삼성코닝정밀소재 주식회사 | Ito 타겟 제조방법 및 이에 의해 제조된 ito 타겟 |
CN108413866B (zh) * | 2018-01-22 | 2019-09-03 | 深圳市亿图视觉自动化技术有限公司 | 一种偏位检测方法、系统及终端设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001262326A (ja) * | 2000-03-16 | 2001-09-26 | Nikko Materials Co Ltd | 酸化インジウム−金属錫混合粉末及び同混合粉末を原料とするitoスパッタリングターゲット並びに同ターゲットの製造方法 |
JP2001271160A (ja) * | 2000-03-28 | 2001-10-02 | Nikko Materials Co Ltd | 高密度ito焼結体スパッタリングターゲット及びその製造方法 |
KR20020040666A (ko) * | 2000-03-28 | 2002-05-30 | 야마모토 기미찌 | 아이티오 스퍼터링 타겟트 |
-
2005
- 2005-08-09 KR KR1020050072894A patent/KR100704273B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001262326A (ja) * | 2000-03-16 | 2001-09-26 | Nikko Materials Co Ltd | 酸化インジウム−金属錫混合粉末及び同混合粉末を原料とするitoスパッタリングターゲット並びに同ターゲットの製造方法 |
JP2001271160A (ja) * | 2000-03-28 | 2001-10-02 | Nikko Materials Co Ltd | 高密度ito焼結体スパッタリングターゲット及びその製造方法 |
KR20020040666A (ko) * | 2000-03-28 | 2002-05-30 | 야마모토 기미찌 | 아이티오 스퍼터링 타겟트 |
Also Published As
Publication number | Publication date |
---|---|
KR20070019050A (ko) | 2007-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5205696B2 (ja) | 酸化ガリウム系焼結体およびその製造方法 | |
JP6947232B2 (ja) | 窒化ガリウム系膜ならびにその製造方法 | |
US20150184280A1 (en) | ITO Ceramic Sputtering Targets with Reduced In2O3 Contents and Method of Producing It | |
JP2007223852A (ja) | 導電性セラミックス焼結体及びスパッタリングターゲット並びにその製造方法 | |
KR100704273B1 (ko) | 아이티오 마이크로파 소결방법 | |
KR101955746B1 (ko) | 스퍼터링 타겟 및 그 제조 방법 | |
JPH11214365A (ja) | 半導体素子製造装置用部材 | |
KR101568215B1 (ko) | 증착용 타블렛의 제조 방법 | |
CN102180653A (zh) | 一种高密度氧化铟锡靶材的制备方法 | |
KR101970952B1 (ko) | 내플라즈마성 전도성 세라믹-나노카본 복합체의 제조방법 | |
CN103663437B (zh) | 利用磁控溅射技术制备石墨烯量子点 | |
JP5320761B2 (ja) | 酸化亜鉛系焼結体タブレットおよびその製造方法 | |
US20230174429A1 (en) | Sintered material, semiconductor manufacturing apparatus including the same, and method of manufacturing the sintered material | |
KR20070001811A (ko) | 스퍼터링 타겟의 제조방법 | |
JP5979082B2 (ja) | 蒸着用タブレットとその製造方法 | |
CN109354495A (zh) | 镁锆铌锑系微波介质陶瓷及制备方法和应用 | |
JP4835542B2 (ja) | 導電性セラミックス焼結体の製造方法 | |
CN108203297B (zh) | 一种导电氧化钛陶瓷溅射靶材及其制备方法 | |
JP5309975B2 (ja) | 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法 | |
JP2009270127A (ja) | 圧電体の製造方法および圧電素子 | |
KR100805455B1 (ko) | 플라즈마 용사법을 이용한 에스오에프씨 금속 접속자의 제조방법 | |
WO2015182167A1 (ja) | 酸化物焼結体及びその製造方法、並びに酸化物膜 | |
JP4835541B2 (ja) | 導電性セラミックス焼結体の製造法 | |
KR101283686B1 (ko) | 열안정성 투명 도전막 및 투명 도전막의 제조방법 | |
JP5685810B2 (ja) | 透明導電膜用焼結体の原料粉末 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130320 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140312 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150223 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151215 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170307 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180205 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190214 Year of fee payment: 13 |