KR100691098B1 - 정전 척 및 그 제조방법 - Google Patents

정전 척 및 그 제조방법 Download PDF

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Publication number
KR100691098B1
KR100691098B1 KR1020010048966A KR20010048966A KR100691098B1 KR 100691098 B1 KR100691098 B1 KR 100691098B1 KR 1020010048966 A KR1020010048966 A KR 1020010048966A KR 20010048966 A KR20010048966 A KR 20010048966A KR 100691098 B1 KR100691098 B1 KR 100691098B1
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KR
South Korea
Prior art keywords
insulating layer
electrostatic chuck
film
metal substrate
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020010048966A
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English (en)
Korean (ko)
Other versions
KR20020014722A (ko
Inventor
다츠미요시아키
미야시타긴야
Original Assignee
가부시키가이샤 크리에이티브 테크놀러지
가와무라 산교 가부시키가이샤
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Application filed by 가부시키가이샤 크리에이티브 테크놀러지, 가와무라 산교 가부시키가이샤 filed Critical 가부시키가이샤 크리에이티브 테크놀러지
Publication of KR20020014722A publication Critical patent/KR20020014722A/ko
Application granted granted Critical
Publication of KR100691098B1 publication Critical patent/KR100691098B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263Coating layer not in excess of 5 mils thick or equivalent
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/269Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31721Of polyimide

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020010048966A 2000-08-16 2001-08-14 정전 척 및 그 제조방법 Expired - Lifetime KR100691098B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00246740 2000-08-16
JP2000246740A JP4753460B2 (ja) 2000-08-16 2000-08-16 静電チャック及びその製造方法

Publications (2)

Publication Number Publication Date
KR20020014722A KR20020014722A (ko) 2002-02-25
KR100691098B1 true KR100691098B1 (ko) 2007-03-09

Family

ID=18736992

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010048966A Expired - Lifetime KR100691098B1 (ko) 2000-08-16 2001-08-14 정전 척 및 그 제조방법

Country Status (5)

Country Link
US (2) US6813134B2 (https=)
EP (1) EP1180793A3 (https=)
JP (1) JP4753460B2 (https=)
KR (1) KR100691098B1 (https=)
TW (1) TW517326B (https=)

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KR100899292B1 (ko) * 2003-01-06 2009-05-26 주식회사 코미코 수명을 연장시키는 절연막을 갖는 반도체 장비용 정전척
JP2004235563A (ja) * 2003-01-31 2004-08-19 Tomoegawa Paper Co Ltd 静電チャック装置用電極シート及びこれを用いた静電チャック装置
US7084492B2 (en) * 2003-06-30 2006-08-01 Intel Corporation Underfill and mold compounds including siloxane-based aromatic diamines
US6944028B1 (en) * 2004-06-19 2005-09-13 C-One Technology Corporation Storage memory device
JP2006049357A (ja) * 2004-07-30 2006-02-16 Toto Ltd 静電チャックおよび静電チャックを搭載した装置
US7648914B2 (en) * 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
US7436645B2 (en) 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US8123902B2 (en) * 2007-03-21 2012-02-28 Applied Materials, Inc. Gas flow diffuser
JP4976915B2 (ja) * 2007-05-08 2012-07-18 新光電気工業株式会社 静電チャックおよび静電チャックの製造方法
WO2009017088A1 (ja) * 2007-08-02 2009-02-05 Ulvac, Inc. 静電チャック機構の製造方法
US8418649B2 (en) 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5567494B2 (ja) 2007-12-19 2014-08-06 ラム リサーチ コーポレーション 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法
US8876024B2 (en) 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
US8043433B2 (en) * 2008-02-11 2011-10-25 Applied Materials, Inc. High efficiency electro-static chucks for semiconductor wafer processing
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US20110127567A1 (en) 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
KR100995250B1 (ko) * 2008-09-09 2010-11-18 주식회사 코미코 열 응력 감소를 위한 버퍼층을 포함하는 정전 척
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
JP5193886B2 (ja) * 2009-01-14 2013-05-08 株式会社巴川製紙所 静電チャック装置の補修方法および補修装置、ならびに静電チャック装置
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
CN102986017B (zh) 2010-05-28 2015-09-16 恩特格林斯公司 高表面电阻率静电吸盘
JP5885404B2 (ja) * 2010-08-04 2016-03-15 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
EP2490073B1 (en) * 2011-02-18 2015-09-23 ASML Netherlands BV Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder
KR20130025025A (ko) * 2011-09-01 2013-03-11 주식회사 코미코 정전척
EP3683627A1 (en) 2012-02-03 2020-07-22 ASML Netherlands B.V. Substrate holder and lithographic apparatus
KR101970301B1 (ko) 2012-07-11 2019-04-18 삼성전자주식회사 웨이퍼 테스트 장치
JP5981358B2 (ja) * 2013-01-23 2016-08-31 東京エレクトロン株式会社 伝熱シート貼付方法
KR102046534B1 (ko) * 2013-01-25 2019-11-19 삼성전자주식회사 기판 가공 방법
CN104752301B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种静电卡盘以及腔室
KR102373326B1 (ko) 2014-12-26 2022-03-11 삼성디스플레이 주식회사 증착 장치 및 증착 장치 내 기판 정렬 방법
KR102311586B1 (ko) 2014-12-26 2021-10-12 삼성디스플레이 주식회사 증착 장치 및 증착 장치 내 기판 정렬 방법
JP6123952B1 (ja) * 2015-08-27 2017-05-10 住友大阪セメント株式会社 静電チャック装置
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component
JP6616363B2 (ja) * 2017-09-05 2019-12-04 日本特殊陶業株式会社 保持装置
CN110473824A (zh) * 2019-09-05 2019-11-19 苏州芯慧联半导体科技有限公司 一种半导体用可再生静电卡盘及其制造方法
CN113613411B (zh) * 2021-09-23 2023-04-07 浙江清华柔性电子技术研究院 柔性电路基板及其制备方法和应用
CN116646299A (zh) * 2023-06-09 2023-08-25 拓荆创益(沈阳)半导体设备有限公司 静电吸盘及其制备方法

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Also Published As

Publication number Publication date
US20020021545A1 (en) 2002-02-21
JP2002064134A (ja) 2002-02-28
US7411773B2 (en) 2008-08-12
KR20020014722A (ko) 2002-02-25
EP1180793A2 (en) 2002-02-20
TW517326B (en) 2003-01-11
US20040160021A1 (en) 2004-08-19
EP1180793A3 (en) 2004-06-16
JP4753460B2 (ja) 2011-08-24
US6813134B2 (en) 2004-11-02

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Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000