KR100657143B1 - 이미지 센서 및 그 제조 방법 - Google Patents

이미지 센서 및 그 제조 방법 Download PDF

Info

Publication number
KR100657143B1
KR100657143B1 KR1020050062301A KR20050062301A KR100657143B1 KR 100657143 B1 KR100657143 B1 KR 100657143B1 KR 1020050062301 A KR1020050062301 A KR 1020050062301A KR 20050062301 A KR20050062301 A KR 20050062301A KR 100657143 B1 KR100657143 B1 KR 100657143B1
Authority
KR
South Korea
Prior art keywords
epitaxial layer
image sensor
conductivity type
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020050062301A
Other languages
English (en)
Korean (ko)
Inventor
차한섭
Original Assignee
매그나칩 반도체 유한회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 매그나칩 반도체 유한회사 filed Critical 매그나칩 반도체 유한회사
Priority to KR1020050062301A priority Critical patent/KR100657143B1/ko
Priority to US11/482,770 priority patent/US7508018B2/en
Priority to JP2006190892A priority patent/JP2007027730A/ja
Application granted granted Critical
Publication of KR100657143B1 publication Critical patent/KR100657143B1/ko
Priority to US12/382,729 priority patent/US7989245B2/en
Assigned to 크로스텍 캐피탈, 엘엘씨 reassignment 크로스텍 캐피탈, 엘엘씨 권리의 전부이전등록 Assignors: 매그나칩 반도체 유한회사
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020050062301A 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법 Expired - Lifetime KR100657143B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050062301A KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법
US11/482,770 US7508018B2 (en) 2005-07-11 2006-07-10 Image sensor having a highly doped and shallow pinning layer
JP2006190892A JP2007027730A (ja) 2005-07-11 2006-07-11 イメージセンサ及びその製造方法
US12/382,729 US7989245B2 (en) 2005-07-11 2009-03-23 Method for fabricating image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050062301A KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법

Publications (1)

Publication Number Publication Date
KR100657143B1 true KR100657143B1 (ko) 2006-12-13

Family

ID=37617522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050062301A Expired - Lifetime KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법

Country Status (3)

Country Link
US (2) US7508018B2 (https=)
JP (1) JP2007027730A (https=)
KR (1) KR100657143B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872775A (zh) * 2009-04-24 2010-10-27 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
KR20240084449A (ko) * 2022-12-06 2024-06-13 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064406B2 (en) * 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
US20080299700A1 (en) * 2007-05-28 2008-12-04 Bang-Chiang Lan Method for fabricating photodiode
JP5400280B2 (ja) * 2007-06-07 2014-01-29 パナソニック株式会社 固体撮像装置
US20140312386A1 (en) * 2009-09-02 2014-10-23 Pixart Imaging Incorporation Optoelectronic device having photodiodes for different wavelengths and process for making same
US8247854B2 (en) * 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
US20110169991A1 (en) * 2010-01-08 2011-07-14 Omnivision Technologies, Inc. Image sensor with epitaxially self-aligned photo sensors
JP5870478B2 (ja) * 2010-09-30 2016-03-01 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2012231026A (ja) 2011-04-26 2012-11-22 Toshiba Corp 固体撮像装置
FR3000605A1 (fr) * 2012-12-31 2014-07-04 St Microelectronics Crolles 2 Photocapteur adapte a la mesure de temps de vol
CN104517976B (zh) * 2013-09-30 2018-03-30 中芯国际集成电路制造(北京)有限公司 Cmos图像传感器的像素结构及其形成方法
CN114388536A (zh) * 2020-10-21 2022-04-22 格科微电子（上海）有限公司 图像传感器形成方法及图像传感器
CN116110918A (zh) * 2022-11-29 2023-05-12 华虹半导体(无锡)有限公司 Cmos图像传感器的工艺方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812481A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 固体撮像素子
JPH04355964A (ja) * 1990-12-21 1992-12-09 Mitsubishi Electric Corp 固体撮像装置及びその製造方法
JP2959460B2 (ja) * 1996-01-30 1999-10-06 日本電気株式会社 固体撮像装置
JP2751910B2 (ja) * 1996-02-28 1998-05-18 日本電気株式会社 半導体受光素子及びその製造方法
JP3782297B2 (ja) 2000-03-28 2006-06-07 株式会社東芝 固体撮像装置及びその製造方法
KR100388459B1 (ko) 2000-10-19 2003-06-25 주식회사 하이닉스반도체 포토다이오드 영역에 트렌치를 구비하는 이미지 센서 및그 제조 방법
KR100406537B1 (ko) * 2001-12-03 2003-11-20 주식회사 하이닉스반도체 반도체장치의 제조 방법
JP2003264283A (ja) * 2002-03-12 2003-09-19 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP4695824B2 (ja) * 2003-03-07 2011-06-08 富士電機ホールディングス株式会社 半導体ウエハの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872775A (zh) * 2009-04-24 2010-10-27 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
CN101872775B (zh) * 2009-04-24 2012-11-28 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
KR20240084449A (ko) * 2022-12-06 2024-06-13 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드
KR102863724B1 (ko) 2022-12-06 2025-09-25 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드

Also Published As

Publication number Publication date
US7508018B2 (en) 2009-03-24
US7989245B2 (en) 2011-08-02
JP2007027730A (ja) 2007-02-01
US20070007562A1 (en) 2007-01-11
US20090286345A1 (en) 2009-11-19

Similar Documents

Publication Publication Date Title
JP5529304B2 (ja) イメージセンサ及びその製造方法
US8829636B2 (en) Solid-state image pickup deviceand fabrication process thereof
US7989245B2 (en) Method for fabricating image sensor
KR100625944B1 (ko) 씨모스 이미지 센서의 포토다이오드 및 그의 제조 방법
US10269864B2 (en) Pixel isolation device and fabrication method
KR100721661B1 (ko) 이미지 센서 및 그 제조 방법
KR100714484B1 (ko) 이미지 센서 및 그 제조 방법
KR102770822B1 (ko) 광전자 디바이스 신호 대 잡음비 향상을 위한 구조 및 재료 공학 방법들
JP2010251628A (ja) 固体撮像装置およびその製造方法
KR100729742B1 (ko) 이미지 센서의 제조방법
KR100749268B1 (ko) 이미지 센서 및 그 제조방법
KR20080062046A (ko) 이미지 센서의 제조 방법
US20080299700A1 (en) Method for fabricating photodiode
KR101033397B1 (ko) 이미지 센서의 제조 방법
KR20070000817A (ko) 씨모스 이미지 센서 및 그 제조 방법
KR20110024467A (ko) 반도체 소자 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20121129

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20131129

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20141128

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150930

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20161125

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170929

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180928

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20190924

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 18

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 19

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20250712

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION