KR100648370B1 - 탄탈륨 스퍼터링 타겟트 및 그 제조방법 - Google Patents
탄탈륨 스퍼터링 타겟트 및 그 제조방법 Download PDFInfo
- Publication number
- KR100648370B1 KR100648370B1 KR1020057008346A KR20057008346A KR100648370B1 KR 100648370 B1 KR100648370 B1 KR 100648370B1 KR 1020057008346 A KR1020057008346 A KR 1020057008346A KR 20057008346 A KR20057008346 A KR 20057008346A KR 100648370 B1 KR100648370 B1 KR 100648370B1
- Authority
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- South Korea
- Prior art keywords
- target
- sputtering target
- forging
- annealing
- ingot
- Prior art date
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 35
- 238000004544 sputter deposition Methods 0.000 title abstract description 10
- 238000002360 preparation method Methods 0.000 title 1
- 238000000137 annealing Methods 0.000 claims abstract description 66
- 238000001953 recrystallisation Methods 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000005242 forging Methods 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 33
- 238000005096 rolling process Methods 0.000 claims abstract description 19
- 239000011324 bead Substances 0.000 claims abstract description 18
- 238000005266 casting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 11
- 238000000265 homogenisation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 229910052715 tantalum Inorganic materials 0.000 abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 13
- 239000002994 raw material Substances 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000005097 cold rolling Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 3
- 238000010273 cold forging Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004165 myocardium Anatomy 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
- B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physical Vapour Deposition (AREA)
- Forging (AREA)
Abstract
Description
Claims (11)
- 삭제
- 용해 주조한 Ta 잉고트 또는 비렛트를 단조, 소둔, 압연 가공 등에 의해 스퍼터링 타겟트를 제조하는 방법에 있어서, 잉고트 또는 비렛트를 단조한 후에 1373K∼1673K의 온도에서 재결정 소둔하며, 단조와 1373K∼1673K의 온도에서의 재결정 소둔을 적어도 2회 반복하여, 타겟트의 평균 결정 입경을 80㎛ 이하의 미세 결정립으로 하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 제2항에 있어서, 1373K∼1673K의 온도에서의 재결정 소둔을 행하는 단조 또는 압연 후의 최종 재결정화 소둔을, 재결정 개시 온도∼1373K의 사이에서 행하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 제2항 또는 제3항에 있어서, 최종 압연 가공 후, 재결정 개시 온도∼1373K의 사이에서 재결정 소둔하며, 다시 타겟트 형상으로 마무리 가공하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 제4항에 있어서, 압연한 후, 결정 균질화 소둔 또는 뒤틀림을 없애는 소둔을 행하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 삭제
- 제2항 또는 제3항에 있어서, 타겟트의 평균 결정 입경을 30∼60㎛의 미세 결정립으로 하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 용해 주조한 Ta 잉고트 또는 비렛트를 단조, 소둔, 압연 가공 등에 의해 스퍼터링 타겟트를 제조하는 방법에 있어서, 잉고트 또는 비렛트를 단조한 후에 1373K∼1673K의 온도에서 재결정 소둔하며, 타겟트의 평균 결정 입경을 80㎛ 이하의 미세 결정립으로 하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 용해 주조한 Ta 잉고트 또는 비렛트를 단조, 소둔, 압연 가공 등에 의해 스퍼터링 타겟트를 제조하는 방법에 있어서, 잉고트 또는 비렛트를 단조한 후에 1373K∼1673K의 온도에서 재결정 소둔하며, 타겟트의 평균 결정 입경을 30∼60㎛의 미세 결정립으로 하는 것을 특징으로 하는 Ta 스퍼터링 타겟트의 제조방법
- 제2항 또는 제3항에 있어서, 타겟트의 표면 또는 내부에 근상(筋狀)(streaks) 또는 괴상(傀狀)(aggregates)의 불균질한 매크로 조직이 없는 균질한 미세결정입조직을 가지는 Ta 스퍼터링 타겟트의 제조방법에 의해 얻어진 Ta 스퍼터링 타겟트
- 제8항 또는 제9항에 있어서, 타겟트의 표면 또는 내부에 근상(筋狀)(streaks) 또는 괴상(傀狀)(aggregates)의 불균질한 매크로 조직이 없는 균질한 미세결정입조직을 가지는 Ta 스퍼터링 타겟트의 제조방법에 의해 얻어진 Ta 스퍼터링 타겟트
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002329186A JP4263900B2 (ja) | 2002-11-13 | 2002-11-13 | Taスパッタリングターゲット及びその製造方法 |
JPJP-P-2002-00329186 | 2002-11-13 | ||
PCT/JP2003/009574 WO2004044259A1 (ja) | 2002-11-13 | 2003-07-29 | Taスパッタリングターゲット及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050086501A KR20050086501A (ko) | 2005-08-30 |
KR100648370B1 true KR100648370B1 (ko) | 2006-11-23 |
Family
ID=32310563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020057008346A KR100648370B1 (ko) | 2002-11-13 | 2003-07-29 | 탄탈륨 스퍼터링 타겟트 및 그 제조방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7699948B2 (ko) |
EP (1) | EP1591556B1 (ko) |
JP (1) | JP4263900B2 (ko) |
KR (1) | KR100648370B1 (ko) |
CN (1) | CN100445419C (ko) |
DE (1) | DE60336429D1 (ko) |
TW (1) | TW200407203A (ko) |
WO (1) | WO2004044259A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220081810A (ko) | 2020-12-09 | 2022-06-16 | 주식회사 에스비이엔지 | 재활용가능한 스퍼터링 타겟 및 그 제조방법 |
Families Citing this family (29)
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US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
CN1329552C (zh) * | 2001-11-26 | 2007-08-01 | 日矿金属株式会社 | 溅射靶及其制造方法 |
JP4883546B2 (ja) * | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
KR100698745B1 (ko) * | 2003-04-01 | 2007-03-23 | 닛코킨조쿠 가부시키가이샤 | 탄탈륨 스퍼터링 타겟트 및 그 제조방법 |
JP4593475B2 (ja) * | 2003-11-06 | 2010-12-08 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
EP1876258A4 (en) * | 2005-04-28 | 2008-08-13 | Nippon Mining Co | sputtering Target |
US8298683B2 (en) | 2005-09-15 | 2012-10-30 | Lg Chem, Ltd. | Organic compound and organic light emitting device using the same |
WO2007040014A1 (ja) * | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | スパッタリングターゲット |
JP4974362B2 (ja) | 2006-04-13 | 2012-07-11 | 株式会社アルバック | Taスパッタリングターゲットおよびその製造方法 |
US20070251818A1 (en) * | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
US10266924B2 (en) | 2009-05-22 | 2019-04-23 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
SG184778A1 (en) | 2009-08-11 | 2012-10-30 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
JP5290393B2 (ja) * | 2009-08-11 | 2013-09-18 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
KR20150039219A (ko) * | 2009-11-17 | 2015-04-09 | 가부시끼가이샤 도시바 | 탄탈 스퍼터링 타겟 및 탄탈 스퍼터링 타겟의 제조 방법 및 반도체 소자의 제조 방법 |
CN103052733B (zh) * | 2010-08-09 | 2015-08-12 | 吉坤日矿日石金属株式会社 | 钽溅射靶 |
DE102011012034A1 (de) | 2011-02-22 | 2012-08-23 | Heraeus Materials Technology Gmbh & Co. Kg | Rohrförmiges Sputtertarget |
CN102418058A (zh) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
CN102517550B (zh) * | 2011-12-20 | 2014-07-09 | 宁波江丰电子材料有限公司 | 高纯钽靶材的制备方法和高纯钽靶材 |
CN102677005B (zh) * | 2012-05-21 | 2013-11-06 | 烟台希尔德新材料有限公司 | 一种大型高致密铬靶的制造方法 |
CN104755651B (zh) | 2012-12-19 | 2017-05-24 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
JP5847309B2 (ja) | 2012-12-19 | 2016-01-20 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
US9859104B2 (en) | 2013-03-04 | 2018-01-02 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target and production method therefor |
KR20160052664A (ko) | 2013-10-01 | 2016-05-12 | 제이엑스 킨조쿠 가부시키가이샤 | 탄탈 스퍼터링 타깃 |
JP6009683B2 (ja) * | 2014-03-27 | 2016-10-19 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
CN103898459B (zh) * | 2014-04-16 | 2016-05-04 | 昆山海普电子材料有限公司 | 一种高纯钴靶材的制备方法 |
WO2016190160A1 (ja) | 2015-05-22 | 2016-12-01 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
CN107532287B (zh) | 2015-05-22 | 2019-11-05 | 捷客斯金属株式会社 | 钽溅射靶及其制造方法 |
KR102190707B1 (ko) | 2017-03-30 | 2020-12-14 | 제이엑스금속주식회사 | 탄탈륨 스퍼터링 타겟 |
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2002
- 2002-11-13 JP JP2002329186A patent/JP4263900B2/ja not_active Expired - Lifetime
-
2003
- 2003-07-29 WO PCT/JP2003/009574 patent/WO2004044259A1/ja active Application Filing
- 2003-07-29 DE DE60336429T patent/DE60336429D1/de not_active Expired - Lifetime
- 2003-07-29 CN CNB038251329A patent/CN100445419C/zh not_active Expired - Lifetime
- 2003-07-29 EP EP03811058A patent/EP1591556B1/en not_active Expired - Lifetime
- 2003-07-29 KR KR1020057008346A patent/KR100648370B1/ko active IP Right Grant
- 2003-07-29 US US10/532,473 patent/US7699948B2/en active Active
- 2003-07-31 TW TW092120959A patent/TW200407203A/zh unknown
Cited By (1)
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EP1591556A4 (en) | 2007-10-10 |
US7699948B2 (en) | 2010-04-20 |
DE60336429D1 (de) | 2011-04-28 |
CN100445419C (zh) | 2008-12-24 |
EP1591556B1 (en) | 2011-03-16 |
EP1591556A1 (en) | 2005-11-02 |
TW200407203A (en) | 2004-05-16 |
JP2004162117A (ja) | 2004-06-10 |
JP4263900B2 (ja) | 2009-05-13 |
CN1694976A (zh) | 2005-11-09 |
US20050268999A1 (en) | 2005-12-08 |
WO2004044259A1 (ja) | 2004-05-27 |
KR20050086501A (ko) | 2005-08-30 |
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