CN100445419C - Ta溅射靶及其制造方法 - Google Patents
Ta溅射靶及其制造方法 Download PDFInfo
- Publication number
- CN100445419C CN100445419C CNB038251329A CN03825132A CN100445419C CN 100445419 C CN100445419 C CN 100445419C CN B038251329 A CNB038251329 A CN B038251329A CN 03825132 A CN03825132 A CN 03825132A CN 100445419 C CN100445419 C CN 100445419C
- Authority
- CN
- China
- Prior art keywords
- target
- sputtering target
- temperature
- make
- forging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 37
- 238000004544 sputter deposition Methods 0.000 title description 10
- 238000002360 preparation method Methods 0.000 title 1
- 238000000137 annealing Methods 0.000 claims abstract description 62
- 238000001953 recrystallisation Methods 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000005242 forging Methods 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 17
- 238000005266 casting Methods 0.000 claims abstract description 16
- 238000005096 rolling process Methods 0.000 claims abstract description 10
- 238000003490 calendering Methods 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 210000003205 muscle Anatomy 0.000 claims description 4
- 238000002844 melting Methods 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 13
- 238000010273 cold forging Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 238000010891 electric arc Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000013077 target material Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J1/00—Preparing metal stock or similar ancillary operations prior, during or post forging, e.g. heating or cooling
- B21J1/02—Preliminary treatment of metal stock without particular shaping, e.g. salvaging segregated zones, forging or pressing in the rough
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Forging (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP329186/2002 | 2002-11-13 | ||
JP2002329186A JP4263900B2 (ja) | 2002-11-13 | 2002-11-13 | Taスパッタリングターゲット及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1694976A CN1694976A (zh) | 2005-11-09 |
CN100445419C true CN100445419C (zh) | 2008-12-24 |
Family
ID=32310563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038251329A Expired - Lifetime CN100445419C (zh) | 2002-11-13 | 2003-07-29 | Ta溅射靶及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7699948B2 (zh) |
EP (1) | EP1591556B1 (zh) |
JP (1) | JP4263900B2 (zh) |
KR (1) | KR100648370B1 (zh) |
CN (1) | CN100445419C (zh) |
DE (1) | DE60336429D1 (zh) |
TW (1) | TW200407203A (zh) |
WO (1) | WO2004044259A1 (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
KR100572263B1 (ko) * | 2001-11-26 | 2006-04-24 | 가부시키 가이샤 닛코 마테리알즈 | 스퍼터링 타겟트 및 그 제조방법 |
JP4883546B2 (ja) * | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
EP2253731B1 (en) * | 2003-04-01 | 2019-07-31 | JX Nippon Mining & Metals Corporation | Tantalum spattering target |
WO2005045090A1 (ja) * | 2003-11-06 | 2005-05-19 | Nikko Materials Co., Ltd. | タンタルスパッタリングターゲット |
EP1876258A4 (en) * | 2005-04-28 | 2008-08-13 | Nippon Mining Co | sputtering Target |
US8298683B2 (en) | 2005-09-15 | 2012-10-30 | Lg Chem, Ltd. | Organic compound and organic light emitting device using the same |
KR100994663B1 (ko) * | 2005-10-04 | 2010-11-16 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 |
JP4974362B2 (ja) | 2006-04-13 | 2012-07-11 | 株式会社アルバック | Taスパッタリングターゲットおよびその製造方法 |
US20070251818A1 (en) * | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
WO2010134417A1 (ja) | 2009-05-22 | 2010-11-25 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
CN102575336B (zh) | 2009-08-11 | 2014-03-26 | 吉坤日矿日石金属株式会社 | 钽溅射靶 |
SG185978A1 (en) * | 2009-08-11 | 2012-12-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
WO2011061897A1 (ja) * | 2009-11-17 | 2011-05-26 | 株式会社 東芝 | タンタルスパッタリングターゲットおよびタンタルスパッタリングターゲットの製造方法ならびに半導体素子の製造方法 |
SG186765A1 (en) | 2010-08-09 | 2013-02-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
DE102011012034A1 (de) * | 2011-02-22 | 2012-08-23 | Heraeus Materials Technology Gmbh & Co. Kg | Rohrförmiges Sputtertarget |
CN102418058A (zh) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
CN102517550B (zh) * | 2011-12-20 | 2014-07-09 | 宁波江丰电子材料有限公司 | 高纯钽靶材的制备方法和高纯钽靶材 |
CN102677005B (zh) * | 2012-05-21 | 2013-11-06 | 烟台希尔德新材料有限公司 | 一种大型高致密铬靶的制造方法 |
SG11201501175TA (en) | 2012-12-19 | 2015-05-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target and method for producing same |
EP2878700B1 (en) * | 2012-12-19 | 2021-01-20 | JX Nippon Mining & Metals Corporation | Method for producing tantalum sputtering target |
KR20170092706A (ko) | 2013-03-04 | 2017-08-11 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 및 그 제조 방법 |
CN105593399B (zh) | 2013-10-01 | 2018-05-25 | 吉坤日矿日石金属株式会社 | 钽溅射靶 |
JP6009683B2 (ja) * | 2014-03-27 | 2016-10-19 | Jx金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
CN103898459B (zh) * | 2014-04-16 | 2016-05-04 | 昆山海普电子材料有限公司 | 一种高纯钴靶材的制备方法 |
EP3260572A4 (en) | 2015-05-22 | 2018-08-01 | JX Nippon Mining & Metals Corporation | Tantalum sputtering target, and production method therefor |
CN107109634B (zh) | 2015-05-22 | 2020-08-28 | 捷客斯金属株式会社 | 钽溅射靶及其制造方法 |
US11177119B2 (en) | 2017-03-30 | 2021-11-16 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target |
CN109666907A (zh) * | 2017-10-16 | 2019-04-23 | 宁波江丰电子材料股份有限公司 | 靶材制造方法 |
KR102586549B1 (ko) | 2020-12-09 | 2023-10-06 | 주식회사 에스비이엔지 | 재활용가능한 스퍼터링 타겟 및 그 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06264232A (ja) * | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Ta製スパッタリングタ−ゲットとその製造方法 |
CN1307646A (zh) * | 1998-06-17 | 2001-08-08 | 庄臣马太电子公司 | 有细密均匀结构和晶体组织的金属件和制造它的方法 |
JP2001271161A (ja) * | 2000-01-20 | 2001-10-02 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットの製造方法 |
WO2002070765A1 (en) * | 2001-02-20 | 2002-09-12 | H. C. Starck, Inc. | Refractory metal plates with uniform texture and methods of making the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3825634C2 (de) | 1988-07-28 | 1994-06-30 | Thyssen Stahl Ag | Verfahren zur Erzeugung von Warmbad oder Grobblechen |
US6197134B1 (en) | 1997-01-08 | 2001-03-06 | Dowa Mining Co., Ltd. | Processes for producing fcc metals |
JPH1180942A (ja) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6323055B1 (en) | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6193821B1 (en) * | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
JP2000239835A (ja) | 1999-02-22 | 2000-09-05 | Japan Energy Corp | スパッタリングターゲット |
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP3905301B2 (ja) | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
US6770154B2 (en) | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP4883546B2 (ja) | 2002-09-20 | 2012-02-22 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲットの製造方法 |
EP2253731B1 (en) | 2003-04-01 | 2019-07-31 | JX Nippon Mining & Metals Corporation | Tantalum spattering target |
WO2005045090A1 (ja) | 2003-11-06 | 2005-05-19 | Nikko Materials Co., Ltd. | タンタルスパッタリングターゲット |
-
2002
- 2002-11-13 JP JP2002329186A patent/JP4263900B2/ja not_active Expired - Lifetime
-
2003
- 2003-07-29 US US10/532,473 patent/US7699948B2/en active Active
- 2003-07-29 CN CNB038251329A patent/CN100445419C/zh not_active Expired - Lifetime
- 2003-07-29 EP EP03811058A patent/EP1591556B1/en not_active Expired - Lifetime
- 2003-07-29 KR KR1020057008346A patent/KR100648370B1/ko active IP Right Grant
- 2003-07-29 DE DE60336429T patent/DE60336429D1/de not_active Expired - Lifetime
- 2003-07-29 WO PCT/JP2003/009574 patent/WO2004044259A1/ja active Application Filing
- 2003-07-31 TW TW092120959A patent/TW200407203A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06264232A (ja) * | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Ta製スパッタリングタ−ゲットとその製造方法 |
CN1307646A (zh) * | 1998-06-17 | 2001-08-08 | 庄臣马太电子公司 | 有细密均匀结构和晶体组织的金属件和制造它的方法 |
JP2001271161A (ja) * | 2000-01-20 | 2001-10-02 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットの製造方法 |
WO2002070765A1 (en) * | 2001-02-20 | 2002-09-12 | H. C. Starck, Inc. | Refractory metal plates with uniform texture and methods of making the same |
Also Published As
Publication number | Publication date |
---|---|
EP1591556A4 (en) | 2007-10-10 |
US7699948B2 (en) | 2010-04-20 |
WO2004044259A1 (ja) | 2004-05-27 |
TW200407203A (en) | 2004-05-16 |
DE60336429D1 (de) | 2011-04-28 |
JP4263900B2 (ja) | 2009-05-13 |
CN1694976A (zh) | 2005-11-09 |
EP1591556B1 (en) | 2011-03-16 |
US20050268999A1 (en) | 2005-12-08 |
KR100648370B1 (ko) | 2006-11-23 |
EP1591556A1 (en) | 2005-11-02 |
KR20050086501A (ko) | 2005-08-30 |
JP2004162117A (ja) | 2004-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
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CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20081224 |
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CX01 | Expiry of patent term |