KR100648355B1 - 극 자외선 소프트 엑스-선 투사 리소그라피 방법 시스템및 리소그라피 부재 - Google Patents

극 자외선 소프트 엑스-선 투사 리소그라피 방법 시스템및 리소그라피 부재 Download PDF

Info

Publication number
KR100648355B1
KR100648355B1 KR1020027000877A KR20027000877A KR100648355B1 KR 100648355 B1 KR100648355 B1 KR 100648355B1 KR 1020027000877 A KR1020027000877 A KR 1020027000877A KR 20027000877 A KR20027000877 A KR 20027000877A KR 100648355 B1 KR100648355 B1 KR 100648355B1
Authority
KR
South Korea
Prior art keywords
glass
high purity
lithography
sio
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020027000877A
Other languages
English (en)
Korean (ko)
Other versions
KR20020010944A (ko
Inventor
클라우드 엘. 주니어 데이비스
케네쓰 이. 허디나
Original Assignee
코닝 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닝 인코포레이티드 filed Critical 코닝 인코포레이티드
Publication of KR20020010944A publication Critical patent/KR20020010944A/ko
Application granted granted Critical
Publication of KR100648355B1 publication Critical patent/KR100648355B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
    • G02B17/0615—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors off-axis or unobscured systems in wich all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0626—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors
    • G02B17/0636—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Surface Treatment Of Glass (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Glass Melting And Manufacturing (AREA)
KR1020027000877A 1999-07-22 2000-07-10 극 자외선 소프트 엑스-선 투사 리소그라피 방법 시스템및 리소그라피 부재 Expired - Lifetime KR100648355B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US14505799P 1999-07-22 1999-07-22
US60/145,057 1999-07-22
US14984099P 1999-08-19 1999-08-19
US60/149,840 1999-08-19
US15881399P 1999-10-12 1999-10-12
US60/158,813 1999-10-12

Publications (2)

Publication Number Publication Date
KR20020010944A KR20020010944A (ko) 2002-02-06
KR100648355B1 true KR100648355B1 (ko) 2006-11-23

Family

ID=27386208

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027000877A Expired - Lifetime KR100648355B1 (ko) 1999-07-22 2000-07-10 극 자외선 소프트 엑스-선 투사 리소그라피 방법 시스템및 리소그라피 부재

Country Status (6)

Country Link
US (2) US6931097B1 (enExample)
EP (1) EP1214718A4 (enExample)
JP (1) JP3766802B2 (enExample)
KR (1) KR100648355B1 (enExample)
AU (1) AU6208300A (enExample)
WO (1) WO2001008163A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6931097B1 (en) 1999-07-22 2005-08-16 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
FR2801113B1 (fr) * 1999-11-15 2003-05-09 Commissariat Energie Atomique Procede d'obtention et source de rayonnement extreme ultra violet, application en lithographie
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US8047023B2 (en) * 2001-04-27 2011-11-01 Corning Incorporated Method for producing titania-doped fused silica glass
US6606883B2 (en) * 2001-04-27 2003-08-19 Corning Incorporated Method for producing fused silica and doped fused silica glass
DE10139188A1 (de) * 2001-08-16 2003-03-06 Schott Glas Glaskeramik für röntgenoptische Komponenten
US6997015B2 (en) 2001-11-27 2006-02-14 Corning Incorporated EUV lithography glass structures formed by extrusion consolidation process
US6988377B2 (en) 2001-11-27 2006-01-24 Corning Incorporated Method for making extreme ultraviolet lithography structures
US6829908B2 (en) 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US6832493B2 (en) 2002-02-27 2004-12-21 Corning Incorporated High purity glass bodies formed by zero shrinkage casting
US7053017B2 (en) 2002-03-05 2006-05-30 Corning Incorporated Reduced striae extreme ultraviolet elements
US7129010B2 (en) 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10317662A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
AU2003229725A1 (en) 2003-04-24 2004-11-19 Carl Zeiss Smt Ag Projection optical system
DE10319596A1 (de) * 2003-05-02 2004-11-25 Degussa Ag Mehrkomponentenglas
JP4817844B2 (ja) 2003-09-27 2011-11-16 カール・ツァイス・エスエムティー・ゲーエムベーハー ゼロ転移温度周辺の熱膨張係数に応じて温度の上昇に対する傾きの符号が異なる材料で構成されたミラーを備えたｅｕｖ投影レンズ
JP4492123B2 (ja) * 2004-01-05 2010-06-30 旭硝子株式会社 シリカガラス
DE102004024808B4 (de) 2004-05-17 2006-11-09 Heraeus Quarzglas Gmbh & Co. Kg Quarzglasrohling für ein optisches Bauteil zur Übertragung extrem kurzwelliger ultravioletter Strahlung
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4506689B2 (ja) * 2005-06-14 2010-07-21 旭硝子株式会社 予備研磨されたガラス基板表面を仕上げ加工する方法
WO2007072890A1 (en) * 2005-12-22 2007-06-28 Asahi Glass Co., Ltd. Glass substrate for mask blank and method of polishing for producing the same
JP2008100891A (ja) 2006-10-20 2008-05-01 Covalent Materials Corp チタニア−シリカガラス
JP5332249B2 (ja) * 2007-06-05 2013-11-06 旭硝子株式会社 ガラス基板の研磨方法
JP2009013048A (ja) * 2007-06-06 2009-01-22 Shin Etsu Chem Co Ltd ナノインプリントモールド用チタニアドープ石英ガラス
JP5042714B2 (ja) 2007-06-06 2012-10-03 信越化学工業株式会社 ナノインプリントモールド用チタニアドープ石英ガラス
JP5314901B2 (ja) * 2008-02-13 2013-10-16 国立大学法人東北大学 シリカ・チタニアガラス及びその製造方法、線膨張係数測定方法
JP5365247B2 (ja) * 2008-02-25 2013-12-11 旭硝子株式会社 ＴｉＯ２を含有するシリカガラスおよびそれを用いたリソグラフィ用光学部材
DE102008002403A1 (de) * 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
JP2010135732A (ja) 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
US8713969B2 (en) * 2009-08-31 2014-05-06 Corning Incorporated Tuning Tzc by the annealing of ultra low expansion glass
DE102009055119B4 (de) * 2009-12-22 2017-07-13 Carl Zeiss Smt Gmbh Spiegelelement für die EUV-Lithographie und Herstellungsverfahren dafür
US8987155B2 (en) 2012-08-30 2015-03-24 Corning Incorporated Niobium doped silica titania glass and method of preparation
TWI652541B (zh) * 2012-12-28 2019-03-01 日商Ｈｏｙａ股份有限公司 Method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, method for producing reflective mask material, and method for manufacturing semiconductor device
JP5992842B2 (ja) 2013-01-24 2016-09-14 信越石英株式会社 シリカチタニアガラスの製造方法及びシリカチタニアガラスの選別方法
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
US9382151B2 (en) 2014-01-31 2016-07-05 Corning Incorporated Low expansion silica-titania articles with a Tzc gradient by compositional variation
US20150239767A1 (en) 2014-02-26 2015-08-27 Corning Incorporated HEAT TREATING SILICA-TITANIA GLASS TO INDUCE A Tzc GRADIENT
EP3224213B1 (en) 2014-11-26 2022-03-23 Corning Incorporated Doped silica-titania glass having low expansivity and methods of making the same
WO2016154190A1 (en) 2015-03-26 2016-09-29 Corning Incorporated Glass composite for use in extreme ultra-violet lithography
JP6069609B2 (ja) * 2015-03-26 2017-02-01 株式会社リガク 二重湾曲ｘ線集光素子およびその構成体、二重湾曲ｘ線分光素子およびその構成体の製造方法
JP6597523B2 (ja) * 2016-08-29 2019-10-30 Ａｇｃ株式会社 多層膜付基板およびその製造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2272342A (en) 1934-08-27 1942-02-10 Corning Glass Works Method of making a transparent article of silica
BE438752A (enExample) 1939-04-22
US3484328A (en) 1965-03-05 1969-12-16 Owens Illinois Inc Telescope mirror blank
US3790654A (en) 1971-11-09 1974-02-05 Corning Glass Works Extrusion method for forming thinwalled honeycomb structures
US4002512A (en) 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide
US4184078A (en) 1978-08-15 1980-01-15 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
US4501602A (en) 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US4732838A (en) * 1985-12-31 1988-03-22 General Electric Company Method of forming a patterned glass layer over the surface of a substrate
US4902216A (en) 1987-09-08 1990-02-20 Corning Incorporated Extrusion die for protrusion and/or high cell density ceramic honeycomb structures
FR2626082B1 (fr) 1988-01-14 1991-10-18 Commissariat Energie Atomique Dispositif d'optique integree permettant de separer les composantes polarisees d'un champ electromagnetique guide et procede de realisation du dispositif
EP0349925A1 (de) * 1988-07-04 1990-01-10 INTERATOM Gesellschaft mit beschränkter Haftung Verfahren zum Beschichten von Gegenständen aus hochschmelzenden Metallen
US5146518A (en) 1990-03-30 1992-09-08 The Furukawa Electric Co., Ltd. Optical directional coupler device and a method of driving same
US5043002A (en) 1990-08-16 1991-08-27 Corning Incorporated Method of making fused silica by decomposing siloxanes
US5152819A (en) * 1990-08-16 1992-10-06 Corning Incorporated Method of making fused silica
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5076700A (en) 1990-12-20 1991-12-31 Litton Systems, Inc. Bonded lightweight mirror structure
US5154744A (en) 1991-08-26 1992-10-13 Corning Incorporated Method of making titania-doped fused silica
US5485497A (en) * 1991-11-12 1996-01-16 Hitachi, Ltd. Optical element and projection exposure apparatus employing the same
US5220590A (en) 1992-05-05 1993-06-15 General Signal Corporation X-ray projection lithography camera
US5353322A (en) 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
JP2995371B2 (ja) 1992-11-12 1999-12-27 セイコーインスツルメンツ株式会社 Ｘ線反射鏡用材料
US5395738A (en) 1992-12-29 1995-03-07 Brandes; George R. Electron lithography using a photocathode
US5356662A (en) * 1993-01-05 1994-10-18 At&T Bell Laboratories Method for repairing an optical element which includes a multilayer coating
US5265143A (en) * 1993-01-05 1993-11-23 At&T Bell Laboratories X-ray optical element including a multilayer coating
US5332702A (en) 1993-04-16 1994-07-26 Corning Incorporated Low sodium zircon refractory and fused silica process
JPH075296A (ja) 1993-06-14 1995-01-10 Canon Inc 軟ｘ線用多層膜
JP3513236B2 (ja) 1993-11-19 2004-03-31 キヤノン株式会社 Ｘ線マスク構造体、ｘ線マスク構造体の製造方法、該ｘ線マスク構造体を用いたｘ線露光装置及びｘ線露光方法、並びに該ｘ線露光方法を用いて製造される半導体装置
JP2569426B2 (ja) 1994-03-24 1997-01-08 工業技術院長 超格子多層膜の製造方法
US5485499A (en) * 1994-08-05 1996-01-16 Moxtek, Inc. High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5868605A (en) 1995-06-02 1999-02-09 Speedfam Corporation In-situ polishing pad flatness control
US6007963A (en) 1995-09-21 1999-12-28 Sandia Corporation Method for extreme ultraviolet lithography
US5686728A (en) * 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US6093484A (en) 1997-04-04 2000-07-25 Hoya Corporation Method for the production of glass product
JPH11221742A (ja) 1997-09-30 1999-08-17 Hoya Corp 研磨方法及び研磨装置並びに磁気記録媒体用ガラス基板及び磁気記録媒体
US6199991B1 (en) 1997-11-13 2001-03-13 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19756486C1 (de) 1997-12-18 1999-04-22 Schott Glas Trägertisch für eine Photomaske in einer Vorrichtung zur Mikrochip-Herstellung
DE19830449A1 (de) 1998-07-08 2000-01-27 Zeiss Carl Fa SiO¶2¶-beschichtetes Spiegelsubstrat für EUV
US6312373B1 (en) 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US5970751A (en) 1998-09-22 1999-10-26 Corning Incorporated Fused SiO2 -TiO2 glass method
JP3631017B2 (ja) * 1998-11-14 2005-03-23 Ｈｏｙａ株式会社 Ｘ線マスクブランク及びその製造方法、並びにｘ線マスク及びその製造方法
US6548142B1 (en) 1999-02-18 2003-04-15 Corning Incorporated Silica glass honeycomb structure from silica soot extrusion
US6188150B1 (en) 1999-06-16 2001-02-13 Euv, Llc Light weight high-stiffness stage platen
KR100647968B1 (ko) 1999-07-22 2006-11-17 코닝 인코포레이티드 극 자외선 소프트 ｘ-선 투사 리소그라피 방법 및 마스크디바이스
US6931097B1 (en) * 1999-07-22 2005-08-16 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
EP1106582A3 (en) 1999-12-10 2001-10-24 Corning Incorporated Silica soot and process for producing it
US6176588B1 (en) 1999-12-14 2001-01-23 Corning Incorporated Low cost light weight mirror blank
US6368942B1 (en) 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
EP1330679A4 (en) * 2000-10-03 2006-09-06 Corning Inc PHOTOLITHOGRAPHIC PROCESSES AND SYSTEMS

Also Published As

Publication number Publication date
USRE41220E1 (en) 2010-04-13
JP2003505876A (ja) 2003-02-12
KR20020010944A (ko) 2002-02-06
AU6208300A (en) 2001-02-13
EP1214718A4 (en) 2006-08-23
US6931097B1 (en) 2005-08-16
WO2001008163A1 (en) 2001-02-01
EP1214718A1 (en) 2002-06-19
JP3766802B2 (ja) 2006-04-19

Similar Documents

Publication Publication Date Title
KR100648355B1 (ko) 극 자외선 소프트 엑스-선 투사 리소그라피 방법 시스템및 리소그라피 부재
KR100647968B1 (ko) 극 자외선 소프트 ｘ-선 투사 리소그라피 방법 및 마스크디바이스
US7462574B2 (en) Silica glass containing TiO2 and optical material for EUV lithography
EP1795506B1 (en) Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
JP2003505876A5 (enExample)
JP5510308B2 (ja) Ｅｕｖｌ光学部材用基材
JP4703647B2 (ja) 石英ガラスブランクおよびその製造方法
EP0835848A2 (en) Fluorine-containing silica glass, its method of manufacture and a projection exposure apparatus comprising the glass
CN102150218B (zh) Euvl用光学部件的平滑化方法及光学面平滑化后的euvl用光学部件
CN101959820A (zh) 含TiO2的石英玻璃和使用高能量密度的EUV光刻用光学部件以及用于其制造的特别温度控制方法
KR20120055564A (ko) ＴｉＯ₂를 함유하는 실리카 유리 및 ＥＵＶ 리소그래피용 광학 부재
KR20010111498A (ko) 투영 리소그라피 포토마스크 블랭크, 예형 및 이의 제조방법
US7585800B2 (en) Silica glass and optical material
EP1219571B1 (en) process for producing a synthetic quartz glass article
US20230132780A1 (en) Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
TW452804B (en) Extreme ultraviolet soft X-ray projection lithographic methods system and lithography elements
JP5050458B2 (ja) シリカガラスおよび光学部材
US20250019289A1 (en) Titania-silica glass body with high quality polishing characteristics
US20210333703A1 (en) Extreme Ultraviolet Mask Blank Defect Reduction

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20020121

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20050415

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060525

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20061016

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20061114

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20061113

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20091117

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20101028

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20111027

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20121025

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20121025

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20131025

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20131025

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20141028

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20141028

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20151027

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20151027

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20161026

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20161026

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170929

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170929

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180928

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180928

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20190924

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20190924

Start annual number: 14

End annual number: 14

PC1801 Expiration of term

Termination date: 20210110

Termination category: Expiration of duration