KR100634330B1 - 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 - Google Patents
구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 Download PDFInfo
- Publication number
- KR100634330B1 KR100634330B1 KR1020047012320A KR20047012320A KR100634330B1 KR 100634330 B1 KR100634330 B1 KR 100634330B1 KR 1020047012320 A KR1020047012320 A KR 1020047012320A KR 20047012320 A KR20047012320 A KR 20047012320A KR 100634330 B1 KR100634330 B1 KR 100634330B1
- Authority
- KR
- South Korea
- Prior art keywords
- cell
- voltage
- current
- bit line
- level
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/025932 WO2004017328A1 (en) | 2002-08-14 | 2002-08-14 | Method for reading a structural phase-change memory |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050018639A KR20050018639A (ko) | 2005-02-23 |
KR100634330B1 true KR100634330B1 (ko) | 2006-10-16 |
Family
ID=31886104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047012320A KR100634330B1 (ko) | 2002-08-14 | 2002-08-14 | 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR100634330B1 (zh) |
CN (1) | CN1628357B (zh) |
AU (1) | AU2002331580A1 (zh) |
DE (1) | DE10297767T5 (zh) |
WO (1) | WO2004017328A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6944041B1 (en) * | 2004-03-26 | 2005-09-13 | Bae Systems Information And Electronic Systems Integration, Inc. | Circuit for accessing a chalcogenide memory array |
DE102004040753A1 (de) * | 2004-08-23 | 2006-03-09 | Infineon Technologies Ag | Schaltungsanordnungen zum Speichern von Informationen in Speicherelementen vom CBRAM-Typ |
DE102004041330B3 (de) | 2004-08-26 | 2006-03-16 | Infineon Technologies Ag | Speicherschaltung mit ein Widerstandsspeicherelement aufweisenden Speicherzellen |
DE102006016514A1 (de) * | 2006-04-07 | 2007-10-18 | Infineon Technologies Ag | Schaltung und Verfahren zum Konfigurieren einer Schaltung |
JP5396011B2 (ja) * | 2007-06-19 | 2014-01-22 | ピーエスフォー ルクスコ エスエイアールエル | 相変化メモリ装置 |
WO2009066204A1 (en) * | 2007-11-22 | 2009-05-28 | Nxp B.V. | Charge carrier stream generating electronic device and method |
US7729163B2 (en) * | 2008-03-26 | 2010-06-01 | Micron Technology, Inc. | Phase change memory |
US8027192B2 (en) | 2008-08-20 | 2011-09-27 | Samsung Electronics Co., Ltd. | Resistive memory devices using assymetrical bitline charging and discharging |
KR101416834B1 (ko) * | 2008-08-20 | 2014-07-08 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
KR101824854B1 (ko) * | 2009-11-06 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8649212B2 (en) * | 2010-09-24 | 2014-02-11 | Intel Corporation | Method, apparatus and system to determine access information for a phase change memory |
JP5598338B2 (ja) * | 2011-01-13 | 2014-10-01 | ソニー株式会社 | 記憶装置およびその動作方法 |
CN103415889B (zh) * | 2011-03-10 | 2017-02-15 | 国际商业机器公司 | 相变存储器中的单元状态确定 |
DE102012102326B4 (de) * | 2012-03-20 | 2024-10-10 | Helmholtz-Zentrum Dresden - Rossendorf E. V. | Verfahren zur Herstellung eines integrierten nichtflüchtigen Analogspeichers |
WO2013017131A2 (de) | 2011-07-12 | 2013-02-07 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Integrierte nichtflüchtige speicherelemente, aufbau und verwendung |
WO2013093669A1 (en) * | 2011-12-21 | 2013-06-27 | International Business Machines Corporation | Read/write operations in solid-state storage devices |
US10134470B2 (en) | 2015-11-04 | 2018-11-20 | Micron Technology, Inc. | Apparatuses and methods including memory and operation of same |
US9530513B1 (en) * | 2015-11-25 | 2016-12-27 | Intel Corporation | Methods and apparatus to read memory cells based on clock pulse counts |
US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
US10157670B2 (en) * | 2016-10-28 | 2018-12-18 | Micron Technology, Inc. | Apparatuses including memory cells and methods of operation of same |
US10566052B2 (en) * | 2017-12-22 | 2020-02-18 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
US10431301B2 (en) | 2017-12-22 | 2019-10-01 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
WO2024060059A1 (en) * | 2022-09-21 | 2024-03-28 | Yangtze Advanced Memory Industrial Innovation Center Co., Ltd. | Memory device and controlling method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1206195A (zh) * | 1997-06-18 | 1999-01-27 | 日本电气株式会社 | 有输入/输出掩码功能且不破坏数据位的半导体存储器件 |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
-
2002
- 2002-08-14 WO PCT/US2002/025932 patent/WO2004017328A1/en not_active Application Discontinuation
- 2002-08-14 CN CN02828593XA patent/CN1628357B/zh not_active Expired - Fee Related
- 2002-08-14 DE DE10297767T patent/DE10297767T5/de not_active Ceased
- 2002-08-14 KR KR1020047012320A patent/KR100634330B1/ko active IP Right Grant
- 2002-08-14 AU AU2002331580A patent/AU2002331580A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2002331580A1 (en) | 2004-03-03 |
CN1628357B (zh) | 2010-05-05 |
CN1628357A (zh) | 2005-06-15 |
WO2004017328A1 (en) | 2004-02-26 |
DE10297767T5 (de) | 2005-08-04 |
KR20050018639A (ko) | 2005-02-23 |
WO2004017328A8 (en) | 2004-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6590807B2 (en) | Method for reading a structural phase-change memory | |
KR100634330B1 (ko) | 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 | |
KR101374639B1 (ko) | 비휘발성 메모리 어레이의 페이지 모드 액세스 | |
US9570163B2 (en) | Immunity of phase change material to disturb in the amorphous phase | |
US6462984B1 (en) | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array | |
US7313016B2 (en) | Method of resetting phase change memory bits through a series of pulses of increasing amplitude | |
US7359231B2 (en) | Providing current for phase change memories | |
JP5478861B2 (ja) | 相変化物質をプログラミングする方法 | |
JP5052805B2 (ja) | メモリを読み出すためのビット特定基準レベルの使用 | |
US7577024B2 (en) | Streaming mode programming in phase change memories | |
US20030002331A1 (en) | Programming a phase-change memory with slow quench time | |
US20150293864A1 (en) | Serial memory device alert of an external host to completion of an internally self-timed operation | |
US20090244963A1 (en) | Programming multilevel cell phase change memories | |
CN219658388U (zh) | 记忆体装置及其写入电路 | |
Zhang et al. | A Write-Verification Method for Non-Volatile Memory | |
CN114360602A (zh) | 用于生成读取参考的非易失性存储器装置及其操作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120919 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131001 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140930 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151001 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160929 Year of fee payment: 11 |