KR100634330B1 - 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 - Google Patents

구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 Download PDF

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Publication number
KR100634330B1
KR100634330B1 KR1020047012320A KR20047012320A KR100634330B1 KR 100634330 B1 KR100634330 B1 KR 100634330B1 KR 1020047012320 A KR1020047012320 A KR 1020047012320A KR 20047012320 A KR20047012320 A KR 20047012320A KR 100634330 B1 KR100634330 B1 KR 100634330B1
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KR
South Korea
Prior art keywords
cell
voltage
current
bit line
level
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KR1020047012320A
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English (en)
Korean (ko)
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KR20050018639A (ko
Inventor
타일러 에이 로우레이
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인텔 코포레이션
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Publication of KR20050018639A publication Critical patent/KR20050018639A/ko
Application granted granted Critical
Publication of KR100634330B1 publication Critical patent/KR100634330B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020047012320A 2002-08-14 2002-08-14 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치 KR100634330B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/025932 WO2004017328A1 (en) 2002-08-14 2002-08-14 Method for reading a structural phase-change memory

Publications (2)

Publication Number Publication Date
KR20050018639A KR20050018639A (ko) 2005-02-23
KR100634330B1 true KR100634330B1 (ko) 2006-10-16

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KR1020047012320A KR100634330B1 (ko) 2002-08-14 2002-08-14 구조적인 위상 변화 메모리 셀의 동작 방법, 집적 회로 및장치

Country Status (5)

Country Link
KR (1) KR100634330B1 (zh)
CN (1) CN1628357B (zh)
AU (1) AU2002331580A1 (zh)
DE (1) DE10297767T5 (zh)
WO (1) WO2004017328A1 (zh)

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Publication number Priority date Publication date Assignee Title
US6944041B1 (en) * 2004-03-26 2005-09-13 Bae Systems Information And Electronic Systems Integration, Inc. Circuit for accessing a chalcogenide memory array
DE102004040753A1 (de) * 2004-08-23 2006-03-09 Infineon Technologies Ag Schaltungsanordnungen zum Speichern von Informationen in Speicherelementen vom CBRAM-Typ
DE102004041330B3 (de) 2004-08-26 2006-03-16 Infineon Technologies Ag Speicherschaltung mit ein Widerstandsspeicherelement aufweisenden Speicherzellen
DE102006016514A1 (de) * 2006-04-07 2007-10-18 Infineon Technologies Ag Schaltung und Verfahren zum Konfigurieren einer Schaltung
JP5396011B2 (ja) * 2007-06-19 2014-01-22 ピーエスフォー ルクスコ エスエイアールエル 相変化メモリ装置
WO2009066204A1 (en) * 2007-11-22 2009-05-28 Nxp B.V. Charge carrier stream generating electronic device and method
US7729163B2 (en) * 2008-03-26 2010-06-01 Micron Technology, Inc. Phase change memory
US8027192B2 (en) 2008-08-20 2011-09-27 Samsung Electronics Co., Ltd. Resistive memory devices using assymetrical bitline charging and discharging
KR101416834B1 (ko) * 2008-08-20 2014-07-08 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
KR101824854B1 (ko) * 2009-11-06 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8649212B2 (en) * 2010-09-24 2014-02-11 Intel Corporation Method, apparatus and system to determine access information for a phase change memory
JP5598338B2 (ja) * 2011-01-13 2014-10-01 ソニー株式会社 記憶装置およびその動作方法
CN103415889B (zh) * 2011-03-10 2017-02-15 国际商业机器公司 相变存储器中的单元状态确定
DE102012102326B4 (de) * 2012-03-20 2024-10-10 Helmholtz-Zentrum Dresden - Rossendorf E. V. Verfahren zur Herstellung eines integrierten nichtflüchtigen Analogspeichers
WO2013017131A2 (de) 2011-07-12 2013-02-07 Helmholtz-Zentrum Dresden - Rossendorf E.V. Integrierte nichtflüchtige speicherelemente, aufbau und verwendung
WO2013093669A1 (en) * 2011-12-21 2013-06-27 International Business Machines Corporation Read/write operations in solid-state storage devices
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
US9530513B1 (en) * 2015-11-25 2016-12-27 Intel Corporation Methods and apparatus to read memory cells based on clock pulse counts
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US10157670B2 (en) * 2016-10-28 2018-12-18 Micron Technology, Inc. Apparatuses including memory cells and methods of operation of same
US10566052B2 (en) * 2017-12-22 2020-02-18 Micron Technology, Inc. Auto-referenced memory cell read techniques
US10431301B2 (en) 2017-12-22 2019-10-01 Micron Technology, Inc. Auto-referenced memory cell read techniques
WO2024060059A1 (en) * 2022-09-21 2024-03-28 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd. Memory device and controlling method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1206195A (zh) * 1997-06-18 1999-01-27 日本电气株式会社 有输入/输出掩码功能且不破坏数据位的半导体存储器件
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells

Also Published As

Publication number Publication date
AU2002331580A1 (en) 2004-03-03
CN1628357B (zh) 2010-05-05
CN1628357A (zh) 2005-06-15
WO2004017328A1 (en) 2004-02-26
DE10297767T5 (de) 2005-08-04
KR20050018639A (ko) 2005-02-23
WO2004017328A8 (en) 2004-08-26

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