KR100629203B1 - 네가티브형 포토레지스트 조성물 - Google Patents

네가티브형 포토레지스트 조성물 Download PDF

Info

Publication number
KR100629203B1
KR100629203B1 KR1019990003492A KR19990003492A KR100629203B1 KR 100629203 B1 KR100629203 B1 KR 100629203B1 KR 1019990003492 A KR1019990003492 A KR 1019990003492A KR 19990003492 A KR19990003492 A KR 19990003492A KR 100629203 B1 KR100629203 B1 KR 100629203B1
Authority
KR
South Korea
Prior art keywords
group
groups
substituent
formula
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019990003492A
Other languages
English (en)
Korean (ko)
Other versions
KR19990072386A (ko
Inventor
사토켄이치로오
Original Assignee
후지 샤신 필름 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지 샤신 필름 가부시기가이샤 filed Critical 후지 샤신 필름 가부시기가이샤
Publication of KR19990072386A publication Critical patent/KR19990072386A/ko
Application granted granted Critical
Publication of KR100629203B1 publication Critical patent/KR100629203B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D498/00Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04Ortho-condensed systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
KR1019990003492A 1998-02-03 1999-02-03 네가티브형 포토레지스트 조성물 Expired - Lifetime KR100629203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02216898A JP3865919B2 (ja) 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物
JP98-22168 1998-02-03

Publications (2)

Publication Number Publication Date
KR19990072386A KR19990072386A (ko) 1999-09-27
KR100629203B1 true KR100629203B1 (ko) 2006-09-27

Family

ID=12075290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990003492A Expired - Lifetime KR100629203B1 (ko) 1998-02-03 1999-02-03 네가티브형 포토레지스트 조성물

Country Status (3)

Country Link
US (1) US6103449A (enExample)
JP (1) JP3865919B2 (enExample)
KR (1) KR100629203B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100400291B1 (ko) * 1998-11-27 2004-02-05 주식회사 하이닉스반도체 신규의포토레지스트용단량체,그의공중합체및이를이용한포토레지스트조성물
US6465147B1 (en) * 1998-12-31 2002-10-15 Hyundai Electronics Industries Co., Ltd. Cross-linker for photoresist, and process for forming a photoresist pattern using the same
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI257528B (en) * 1999-12-16 2006-07-01 Fuji Photo Film Co Ltd Positive resist composition
JP4105354B2 (ja) * 2000-01-17 2008-06-25 富士フイルム株式会社 ポジ型フォトレジスト組成物
TWI229240B (en) * 2000-03-06 2005-03-11 Shinetsu Chemical Co Polymer, resist material, and method for forming pattern
US6251560B1 (en) * 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
KR100506882B1 (ko) * 2000-07-13 2005-08-08 주식회사 하이닉스반도체 Tips용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
EP1195390B1 (en) * 2000-09-14 2004-12-08 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
WO2002044845A2 (en) * 2000-11-29 2002-06-06 E.I. Du Pont De Nemours And Company Protecting groups in polymers, photoresists and processes for microlithography
KR100555287B1 (ko) * 2001-01-17 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 에테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법
JP4262422B2 (ja) * 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
JP4337602B2 (ja) * 2004-03-31 2009-09-30 日本ゼオン株式会社 感放射線組成物、積層体及びその製造方法並びに電子部品
KR102190531B1 (ko) 2013-11-26 2020-12-15 스미또모 가가꾸 가부시키가이샤 수지, 포토레지스트 조성물, 및 포토레지스트 패턴의 제조 방법
TWI637998B (zh) * 2013-11-26 2018-10-11 住友化學股份有限公司 樹脂、光阻組成物,以及光阻圖案之製造方法
US9514651B2 (en) 2014-08-19 2016-12-06 Here Global B.V. Optimal warning distance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789278A2 (en) * 1996-02-09 1997-08-13 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US5932391A (en) * 1995-08-18 1999-08-03 Kabushiki Kaisha Toshiba Resist for alkali development
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3859353B2 (ja) * 1998-04-28 2006-12-20 富士通株式会社 ネガ型レジスト組成物およびレジストパターンの形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789278A2 (en) * 1996-02-09 1997-08-13 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition

Also Published As

Publication number Publication date
KR19990072386A (ko) 1999-09-27
US6103449A (en) 2000-08-15
JP3865919B2 (ja) 2007-01-10
JPH11218918A (ja) 1999-08-10

Similar Documents

Publication Publication Date Title
KR100629203B1 (ko) 네가티브형 포토레지스트 조성물
KR100684155B1 (ko) 원자외선 노광용 포지티브 포토레지스트 조성물
EP1367440B1 (en) Positive-working resist composition
US6576392B1 (en) Positive photoresist composition
US6159655A (en) Positive photoresist composition for exposure to far ultraviolet light
KR100597860B1 (ko) 원자외선 노광용 포지티브 포토레지스트 조성물
US6242153B1 (en) Positive photoresist composition for far ultraviolet ray exposure
US6214517B1 (en) Positive photoresist composition
JP3995369B2 (ja) ポジ型フォトレジスト組成物
JPH11109630A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3832780B2 (ja) ポジ型フォトレジスト組成物
KR100553942B1 (ko) 포지티브형 레지스트액 및 포지티브형 레지스트 조성물
JP2000047387A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3912761B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH1130864A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001100421A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH10307396A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4667278B2 (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JPH10207067A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4190141B2 (ja) ポジ型フォトレジスト組成物
JP3890357B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH11184090A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH10282673A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH1138628A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH11344807A (ja) 遠紫外線露光用ネガ型フォトレジスト組成物

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19990203

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20031031

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19990203

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051117

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060508

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060807

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20060921

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20060922

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20090910

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100910

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110811

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20120907

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20120907

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130903

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130903

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140901

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140901

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150819

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150819

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160818

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170823

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170823

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180904

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180904

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20190803

Termination category: Expiration of duration