KR100628616B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100628616B1
KR100628616B1 KR1020017012346A KR20017012346A KR100628616B1 KR 100628616 B1 KR100628616 B1 KR 100628616B1 KR 1020017012346 A KR1020017012346 A KR 1020017012346A KR 20017012346 A KR20017012346 A KR 20017012346A KR 100628616 B1 KR100628616 B1 KR 100628616B1
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KR
South Korea
Prior art keywords
plasma processing
processing apparatus
lower electrode
wall
plasma
Prior art date
Application number
KR1020017012346A
Other languages
English (en)
Korean (ko)
Other versions
KR20010112374A (ko
Inventor
스에마자도모키
이나자와고이치로
오노츠요시
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20010112374A publication Critical patent/KR20010112374A/ko
Application granted granted Critical
Publication of KR100628616B1 publication Critical patent/KR100628616B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
KR1020017012346A 1999-03-31 2000-03-31 플라즈마 처리 장치 KR100628616B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11091566A JP2000286242A (ja) 1999-03-31 1999-03-31 プラズマ処理装置
JPJP-P-1999-00091566 1999-03-31

Publications (2)

Publication Number Publication Date
KR20010112374A KR20010112374A (ko) 2001-12-20
KR100628616B1 true KR100628616B1 (ko) 2006-09-26

Family

ID=14030080

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017012346A KR100628616B1 (ko) 1999-03-31 2000-03-31 플라즈마 처리 장치

Country Status (3)

Country Link
JP (1) JP2000286242A (ja)
KR (1) KR100628616B1 (ja)
WO (1) WO2000059019A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431660B1 (ko) * 2001-07-24 2004-05-17 삼성전자주식회사 반도체 장치의 제조를 위한 건식 식각 장치
KR100666764B1 (ko) * 2001-10-16 2007-01-09 동경 엘렉트론 주식회사 피처리체 승강기구 및 이를 사용한 처리장치
KR100819701B1 (ko) * 2001-11-01 2008-04-04 엘지.필립스 엘시디 주식회사 식각 장비의 로딩/언로딩 방법
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
KR20030090305A (ko) * 2002-05-22 2003-11-28 동경엘렉트론코리아(주) 플라즈마 발생장치의 가스 배기용 배플 플레이트
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
JP2010287639A (ja) * 2009-06-10 2010-12-24 Hitachi High-Technologies Corp プラズマ処理装置
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
JP5640135B2 (ja) * 2013-10-22 2014-12-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
JP7199246B2 (ja) * 2019-02-19 2023-01-05 東京エレクトロン株式会社 基板処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226296A (ja) * 1992-02-10 1993-09-03 Fujitsu Ltd スパッタエッチング装置の異常放電監視方法
JP3090562B2 (ja) * 1993-05-24 2000-09-25 東京エレクトロン株式会社 プラズマ処理装置
JP3238082B2 (ja) * 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
JP2850229B2 (ja) * 1996-12-17 1999-01-27 神鋼パンテツク株式会社 焼成炉
JP3396399B2 (ja) * 1997-06-26 2003-04-14 シャープ株式会社 電子デバイス製造装置

Also Published As

Publication number Publication date
JP2000286242A (ja) 2000-10-13
WO2000059019A1 (fr) 2000-10-05
KR20010112374A (ko) 2001-12-20

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