KR100623144B1 - 메모리 셀 장치 및 그 제조 방법 - Google Patents

메모리 셀 장치 및 그 제조 방법 Download PDF

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Publication number
KR100623144B1
KR100623144B1 KR1020007010546A KR20007010546A KR100623144B1 KR 100623144 B1 KR100623144 B1 KR 100623144B1 KR 1020007010546 A KR1020007010546 A KR 1020007010546A KR 20007010546 A KR20007010546 A KR 20007010546A KR 100623144 B1 KR100623144 B1 KR 100623144B1
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KR
South Korea
Prior art keywords
memory cell
bit lines
semiconductor substrate
adjacent
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020007010546A
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English (en)
Korean (ko)
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KR20010042141A (ko
Inventor
한스 라이징어
Original Assignee
인피니언 테크놀로지스 아게
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Publication date
Application filed by 인피니언 테크놀로지스 아게 filed Critical 인피니언 테크놀로지스 아게
Publication of KR20010042141A publication Critical patent/KR20010042141A/ko
Application granted granted Critical
Publication of KR100623144B1 publication Critical patent/KR100623144B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020007010546A 1998-03-24 1999-03-17 메모리 셀 장치 및 그 제조 방법 Expired - Fee Related KR100623144B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19812948.3 1998-03-24
DE19812948 1998-03-24

Publications (2)

Publication Number Publication Date
KR20010042141A KR20010042141A (ko) 2001-05-25
KR100623144B1 true KR100623144B1 (ko) 2006-09-12

Family

ID=7862152

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007010546A Expired - Fee Related KR100623144B1 (ko) 1998-03-24 1999-03-17 메모리 셀 장치 및 그 제조 방법

Country Status (7)

Country Link
US (2) US6365944B1 (https=)
EP (1) EP1068644B1 (https=)
JP (1) JP2002508594A (https=)
KR (1) KR100623144B1 (https=)
CN (1) CN1165999C (https=)
TW (1) TW432700B (https=)
WO (1) WO1999049516A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002539611A (ja) 1999-03-09 2002-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリを有する半導体装置
JP4730999B2 (ja) * 2000-03-10 2011-07-20 スパンション エルエルシー 不揮発性メモリの製造方法
DE10051483A1 (de) * 2000-10-17 2002-05-02 Infineon Technologies Ag Nichtflüchtige Halbleiterspeicherzellenanordnung und Verfahren zu deren Herstellung
US6580120B2 (en) * 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
US6630384B1 (en) * 2001-10-05 2003-10-07 Advanced Micro Devices, Inc. Method of fabricating double densed core gates in sonos flash memory
JP3967193B2 (ja) * 2002-05-21 2007-08-29 スパンション エルエルシー 不揮発性半導体記憶装置及びその製造方法
US7423310B2 (en) * 2004-09-29 2008-09-09 Infineon Technologies Ag Charge-trapping memory cell and charge-trapping memory device
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
KR100739532B1 (ko) 2006-06-09 2007-07-13 삼성전자주식회사 매몰 비트라인 형성 방법
US8441063B2 (en) * 2010-12-30 2013-05-14 Spansion Llc Memory with extended charge trapping layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970063722A (ko) * 1996-02-28 1997-09-12 문정환 반도체 메로리셀 구조 및 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651184A (en) * 1984-08-31 1987-03-17 Texas Instruments Incorporated Dram cell and array
JP2596198B2 (ja) 1990-08-30 1997-04-02 日本電気株式会社 Ｍｏｓ型読み出し専用半導体記憶装置
JPH05102436A (ja) * 1991-10-09 1993-04-23 Ricoh Co Ltd 半導体メモリ装置とその製造方法
US5278438A (en) * 1991-12-19 1994-01-11 North American Philips Corporation Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure
DE19510042C2 (de) 1995-03-20 1997-01-23 Siemens Ag Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung
DE19514834C1 (de) * 1995-04-21 1997-01-09 Siemens Ag Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
KR0179807B1 (ko) * 1995-12-30 1999-03-20 문정환 반도체 기억소자 제조방법
US6118147A (en) * 1998-07-07 2000-09-12 Advanced Micro Devices, Inc. Double density non-volatile memory cells
US6207493B1 (en) * 1998-08-19 2001-03-27 International Business Machines Corporation Formation of out-diffused bitline by laser anneal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970063722A (ko) * 1996-02-28 1997-09-12 문정환 반도체 메로리셀 구조 및 제조방법

Also Published As

Publication number Publication date
CN1165999C (zh) 2004-09-08
EP1068644B1 (de) 2015-07-08
JP2002508594A (ja) 2002-03-19
EP1068644A1 (de) 2001-01-17
US20020055247A1 (en) 2002-05-09
US6534362B2 (en) 2003-03-18
US6365944B1 (en) 2002-04-02
CN1294759A (zh) 2001-05-09
WO1999049516A1 (de) 1999-09-30
TW432700B (en) 2001-05-01
KR20010042141A (ko) 2001-05-25

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