KR100609362B1 - 화학/기계 연마용 수계 분산체 - Google Patents
화학/기계 연마용 수계 분산체 Download PDFInfo
- Publication number
- KR100609362B1 KR100609362B1 KR1020040050286A KR20040050286A KR100609362B1 KR 100609362 B1 KR100609362 B1 KR 100609362B1 KR 1020040050286 A KR1020040050286 A KR 1020040050286A KR 20040050286 A KR20040050286 A KR 20040050286A KR 100609362 B1 KR100609362 B1 KR 100609362B1
- Authority
- KR
- South Korea
- Prior art keywords
- aqueous dispersion
- chemical
- mechanical polishing
- aqueous
- weight
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Abstract
Description
Claims (4)
- (A) 연마 입자, (B) 2-브로모-2-니트로-1,3-프로판디올, 2-브로모-2-니트로-1,3-부탄디올, 2,2-디브로모-2-니트로에탄올 및 2,2-디브로모-3-니트릴로프로피온아미드로 이루어진 군으로부터 선택되는 1종 이상의 화합물, 및 (C) 상기 성분 (B)의 화합물 이외의 수용성 중합체, 계면활성제 및 유기산으로 이루어진 군으로부터 선택된 1종 이상의 화합물을 포함하는 화학/기계 연마용 수계 분산체.
- 제1항에 있어서, 연마 입자 (A)가 세리아 입자인 화학/기계 연마용 수계 분산체.
- 제1항에 있어서, 유기 성분 (C)가 수용성 중합체를 포함하는 것인 화학/기계 연마용 수계 분산체.
- 제1항에 있어서, 쉘로우 트렌치 분리 공정에 사용되는 화학/기계 연마용 수계 분산체.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00270113 | 2003-07-01 | ||
JP2003270113A JP4637464B2 (ja) | 2003-07-01 | 2003-07-01 | 化学機械研磨用水系分散体 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050004039A KR20050004039A (ko) | 2005-01-12 |
KR100609362B1 true KR100609362B1 (ko) | 2006-08-08 |
Family
ID=33432372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040050286A KR100609362B1 (ko) | 2003-07-01 | 2004-06-30 | 화학/기계 연마용 수계 분산체 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7090786B2 (ko) |
EP (1) | EP1493789B1 (ko) |
JP (1) | JP4637464B2 (ko) |
KR (1) | KR100609362B1 (ko) |
CN (1) | CN1276051C (ko) |
DE (1) | DE602004001098T2 (ko) |
TW (1) | TWI263672B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4648019B2 (ja) | 2005-02-02 | 2011-03-09 | 本田技研工業株式会社 | 加圧バッグの製造方法、及び係る加圧バッグを用いた複合材成形品の成形方法 |
DE102005017372A1 (de) * | 2005-04-14 | 2006-10-19 | Degussa Ag | Wässrige Ceroxiddispersion |
TWI385226B (zh) | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Cmp控股公司 | 用於移除聚合物阻障之研磨漿液 |
CN101374922B (zh) * | 2006-01-25 | 2013-06-12 | Lg化学株式会社 | 用于抛光半导体晶片的cmp浆料及使用该浆料的方法 |
JPWO2007108215A1 (ja) * | 2006-03-20 | 2009-08-06 | 三井化学株式会社 | 研磨用組成物 |
US7538969B2 (en) * | 2006-08-23 | 2009-05-26 | Imation Corp. | Servo pattern with encoded data |
JP5397218B2 (ja) * | 2007-02-27 | 2014-01-22 | 日立化成株式会社 | シリコン膜用cmpスラリー |
KR101657723B1 (ko) * | 2008-07-15 | 2016-09-19 | 다우 글로벌 테크놀로지스 엘엘씨 | 살생물 조성물 및 방법 |
JP5497400B2 (ja) * | 2009-10-14 | 2014-05-21 | 日本化学工業株式会社 | 半導体ウエハ研磨用組成物および研磨方法 |
SG190765A1 (en) | 2010-12-24 | 2013-07-31 | Hitachi Chemical Co Ltd | Polishing liquid and method for polishing substrate using the polishing liquid |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
US20170194160A1 (en) * | 2016-01-06 | 2017-07-06 | Cabot Microelectronics Corporation | Method of polishing a low-k substrate |
KR102475282B1 (ko) * | 2017-03-29 | 2022-12-07 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 |
KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1287259B (de) * | 1967-04-26 | 1969-01-16 | Henkel & Cie Gmbh | Verwendung von Nitroalkoholen als Potenzierungsmittel in antimikrobiellen Mitteln |
JP2877440B2 (ja) | 1989-06-09 | 1999-03-31 | ナルコ ケミカル カンパニー | コロイド状シリカ研磨性スラリー |
JPH1022241A (ja) * | 1996-07-08 | 1998-01-23 | Tokyo Fine Chem Kk | シリコンウェハ用ラップ液およびラップ剤 |
JPH10154672A (ja) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
TW510917B (en) | 1998-02-24 | 2002-11-21 | Showa Denko Kk | Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same |
JP2001118812A (ja) * | 1999-08-09 | 2001-04-27 | Nikon Corp | 化学機械研磨装置および半導体デバイス製造方法 |
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP2002114970A (ja) * | 2000-10-04 | 2002-04-16 | Asahi Denka Kogyo Kk | 水系ラップ液及び水系ラップ剤 |
JP2002155268A (ja) * | 2000-11-20 | 2002-05-28 | Toshiba Corp | 化学的機械的研磨用スラリ及び半導体装置の製造方法 |
JP2002203818A (ja) * | 2000-12-27 | 2002-07-19 | Jsr Corp | 研磨方法 |
JP2002184734A (ja) * | 2000-12-19 | 2002-06-28 | Tokuyama Corp | 半導体装置の製造方法 |
JP2002190458A (ja) * | 2000-12-21 | 2002-07-05 | Jsr Corp | 化学機械研磨用水系分散体 |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
JP2003082336A (ja) * | 2001-09-12 | 2003-03-19 | Asahi Denka Kogyo Kk | 水系ラップ液及び水系ラップ剤 |
JP2003124159A (ja) * | 2001-10-16 | 2003-04-25 | Asahi Denka Kogyo Kk | 水系ラップ液及び水系ラップ剤 |
-
2003
- 2003-07-01 JP JP2003270113A patent/JP4637464B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-29 US US10/878,052 patent/US7090786B2/en not_active Expired - Fee Related
- 2004-06-30 DE DE602004001098T patent/DE602004001098T2/de not_active Expired - Lifetime
- 2004-06-30 TW TW093119864A patent/TWI263672B/zh not_active IP Right Cessation
- 2004-06-30 KR KR1020040050286A patent/KR100609362B1/ko active IP Right Grant
- 2004-06-30 EP EP04015343A patent/EP1493789B1/en not_active Expired - Fee Related
- 2004-07-01 CN CNB2004100552639A patent/CN1276051C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1576345A (zh) | 2005-02-09 |
DE602004001098T2 (de) | 2006-11-30 |
DE602004001098D1 (de) | 2006-07-20 |
EP1493789B1 (en) | 2006-06-07 |
CN1276051C (zh) | 2006-09-20 |
TW200504191A (en) | 2005-02-01 |
US7090786B2 (en) | 2006-08-15 |
TWI263672B (en) | 2006-10-11 |
EP1493789A1 (en) | 2005-01-05 |
JP2005026604A (ja) | 2005-01-27 |
US20050001199A1 (en) | 2005-01-06 |
JP4637464B2 (ja) | 2011-02-23 |
KR20050004039A (ko) | 2005-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5516604B2 (ja) | Cmp用研磨液及びこれを用いた研磨方法 | |
KR101060441B1 (ko) | Sti를 위한 화학/기계 연마 방법 | |
JP6252587B2 (ja) | Cmp用研磨液及び研磨方法 | |
CN100543100C (zh) | 化学机械研磨用水性分散剂及其化学机械研磨方法 | |
KR100609362B1 (ko) | 화학/기계 연마용 수계 분산체 | |
CN101016440A (zh) | 多组分阻挡层抛光液 | |
JP2005236275A (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
JP6298588B2 (ja) | 洗浄液及び基板の研磨方法 | |
KR102444499B1 (ko) | 연마용 조성물 및 그것을 사용한 연마 방법 | |
KR20160114709A (ko) | 폴리(아미노산)을 포함하는 화학 기계적 연마(cmp) 조성물 | |
TWI629324B (zh) | 研磨基板之方法 | |
KR100674927B1 (ko) | Cmp용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 | |
JP2023164473A (ja) | Cmp研磨液及び研磨方法 | |
TWI760494B (zh) | 用於淺溝槽隔離的水性二氧化矽漿料組合物及其使用方法 | |
CN106414651B (zh) | 对氧化物的选择性优于对多晶硅和氮化物选择性的具高移除速率及低缺陷率的cmp组合物 | |
CN116333599A (zh) | 一种化学机械抛光液及其使用方法 | |
JP6638660B2 (ja) | 洗浄液 | |
CN114787304B (zh) | 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光 | |
WO2021161462A1 (ja) | Cmp研磨液及び研磨方法 | |
JP2009302551A (ja) | 化学機械研磨用水系分散体を調製するためのセット | |
WO2022224357A1 (ja) | Cmp研磨液及び研磨方法 | |
JP6620590B2 (ja) | 研磨液及び研磨方法 | |
JP4878728B2 (ja) | Cmp研磨剤および基板の研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120629 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20130705 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150626 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160630 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170704 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180717 Year of fee payment: 13 |