KR100595866B1 - 반도체 소자용 자체 정렬 컨택트 - Google Patents

반도체 소자용 자체 정렬 컨택트 Download PDF

Info

Publication number
KR100595866B1
KR100595866B1 KR1020007007166A KR20007007166A KR100595866B1 KR 100595866 B1 KR100595866 B1 KR 100595866B1 KR 1020007007166 A KR1020007007166 A KR 1020007007166A KR 20007007166 A KR20007007166 A KR 20007007166A KR 100595866 B1 KR100595866 B1 KR 100595866B1
Authority
KR
South Korea
Prior art keywords
etching
etch
plasma
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020007007166A
Other languages
English (en)
Korean (ko)
Other versions
KR20010033646A (ko
Inventor
자넷엠. 플래너
린다엔. 마퀴스
조엘엠. 쿡
이안제이. 모리
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20010033646A publication Critical patent/KR20010033646A/ko
Application granted granted Critical
Publication of KR100595866B1 publication Critical patent/KR100595866B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020007007166A 1997-12-29 1998-12-11 반도체 소자용 자체 정렬 컨택트 Expired - Lifetime KR100595866B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/998,954 1997-12-29
US08/998,954 US6165910A (en) 1997-12-29 1997-12-29 Self-aligned contacts for semiconductor device
US08/998,954 1997-12-29
PCT/US1998/026503 WO1999034426A1 (en) 1997-12-29 1998-12-11 Self-aligned contacts for semiconductor device

Publications (2)

Publication Number Publication Date
KR20010033646A KR20010033646A (ko) 2001-04-25
KR100595866B1 true KR100595866B1 (ko) 2006-07-03

Family

ID=25545701

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007007166A Expired - Lifetime KR100595866B1 (ko) 1997-12-29 1998-12-11 반도체 소자용 자체 정렬 컨택트

Country Status (7)

Country Link
US (1) US6165910A (enExample)
EP (1) EP1042797A1 (enExample)
JP (1) JP4638030B2 (enExample)
KR (1) KR100595866B1 (enExample)
IL (1) IL137016A (enExample)
TW (1) TW399240B (enExample)
WO (1) WO1999034426A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638843B1 (en) * 2000-03-23 2003-10-28 Micron Technology, Inc. Method for forming a silicide gate stack for use in a self-aligned contact etch
US6797639B2 (en) 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6452033B1 (en) * 2002-02-11 2002-09-17 Dow Corning Corporation Method of making N-[2-aminoethyl] aminoalkylalkoxysilanes with ethyenediamine salt recycle
KR100576463B1 (ko) * 2003-12-24 2006-05-08 주식회사 하이닉스반도체 반도체소자의 콘택 형성방법
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7271363B2 (en) * 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7456097B1 (en) * 2004-11-30 2008-11-25 National Semiconductor Corporation System and method for faceting via top corners to improve metal fill
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
JP6521848B2 (ja) * 2015-01-16 2019-05-29 東京エレクトロン株式会社 エッチング方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法
US10217707B2 (en) * 2016-09-16 2019-02-26 International Business Machines Corporation Trench contact resistance reduction

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797250A2 (en) * 1996-03-22 1997-09-24 Kabushiki Kaisha Toshiba Method of making contacts on a semiconductor device
EP0805485A2 (en) * 1996-04-29 1997-11-05 Applied Materials, Inc. Method for plasma etching dielectric layers with high selectivity and low microloading effect

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1168762A (en) * 1981-06-22 1984-06-05 Osamu Michikami Method of fabrication for josephson tunnel junction
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact
JPH0590221A (ja) * 1991-02-20 1993-04-09 Canon Inc 珪素化合物膜のエツチング方法及び該方法を利用した物品の形成方法
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5286344A (en) * 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
US5286667A (en) * 1992-08-11 1994-02-15 Taiwan Semiconductor Manufacturing Company Modified and robust self-aligning contact process
TW273067B (enExample) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
JPH0817796A (ja) * 1994-06-28 1996-01-19 Hitachi Ltd ドライエッチング装置とその方法および半導体装置
US5643394A (en) * 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
DE4444325C2 (de) 1994-12-13 1998-04-30 Gogas Goch Gmbh & Co Heizstrahler
US5783496A (en) * 1996-03-29 1998-07-21 Lam Research Corporation Methods and apparatus for etching self-aligned contacts
JPH10261628A (ja) * 1996-10-24 1998-09-29 Hyundai Electron Ind Co Ltd 半導体素子のコンタクトホール製造方法
JP2988455B2 (ja) * 1997-10-15 1999-12-13 日本電気株式会社 プラズマエッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797250A2 (en) * 1996-03-22 1997-09-24 Kabushiki Kaisha Toshiba Method of making contacts on a semiconductor device
EP0805485A2 (en) * 1996-04-29 1997-11-05 Applied Materials, Inc. Method for plasma etching dielectric layers with high selectivity and low microloading effect

Also Published As

Publication number Publication date
IL137016A (en) 2003-05-29
WO1999034426A1 (en) 1999-07-08
US6165910A (en) 2000-12-26
JP2002500442A (ja) 2002-01-08
EP1042797A1 (en) 2000-10-11
KR20010033646A (ko) 2001-04-25
IL137016A0 (en) 2001-06-14
TW399240B (en) 2000-07-21
JP4638030B2 (ja) 2011-02-23

Similar Documents

Publication Publication Date Title
US5783496A (en) Methods and apparatus for etching self-aligned contacts
KR100595866B1 (ko) 반도체 소자용 자체 정렬 컨택트
JP3027951B2 (ja) 半導体装置の製造方法
US20060043066A1 (en) Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
WO1999033097A1 (en) Improved techniques for etching an oxide layer
US6716766B2 (en) Process variation resistant self aligned contact etch
US6309979B1 (en) Methods for reducing plasma-induced charging damage
US7470628B2 (en) Etching methods
JP3213803B2 (ja) 高密度プラズマエッチング装置を用いた半導体のスロープコンタクトホール形成方法
JP4451934B2 (ja) 導電層をエッチングする方法及び集積回路
JP4351806B2 (ja) フォトレジストマスクを使用してエッチングするための改良技術
KR100782632B1 (ko) 절연막의 에칭 방법
KR100743873B1 (ko) 플라즈마 처리 챔버 내에서의 에칭을 개선하기 위한 기술
JP2003023000A (ja) 半導体装置の製造方法
US6329292B1 (en) Integrated self aligned contact etch
US6133153A (en) Self-aligned contacts for semiconductor device
CN102136420A (zh) 等离子体处理系统中的选择性控制
KR0171733B1 (ko) 반도체 소자의 콘택홀 형성 방법
KR102841590B1 (ko) 기판 및 기판 처리 방법
JPH1126578A (ja) 微細接続孔の形成方法
JP4577328B2 (ja) 半導体装置の製造方法
KR100669560B1 (ko) 반도체 소자의 도전 배선 형성 방법
JPH10256368A (ja) 半導体装置の製造方法
JP2639402B2 (ja) 酸化物層のテーパーエッチング方法
JPH1065003A (ja) 微細接続孔の形成方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20000627

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20031208

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20050912

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060428

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20060623

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20060622

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20090622

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100617

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110610

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20120607

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130611

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130611

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140611

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140611

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150608

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150608

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160613

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160613

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170613

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170613

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180612

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180612

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20190611

Termination category: Expiration of duration