KR100573689B1 - 하프톤형 위상 시프트 마스크 블랭크 및 하프톤형 위상시프트 마스크 - Google Patents
하프톤형 위상 시프트 마스크 블랭크 및 하프톤형 위상시프트 마스크 Download PDFInfo
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- KR100573689B1 KR100573689B1 KR1020060013523A KR20060013523A KR100573689B1 KR 100573689 B1 KR100573689 B1 KR 100573689B1 KR 1020060013523 A KR1020060013523 A KR 1020060013523A KR 20060013523 A KR20060013523 A KR 20060013523A KR 100573689 B1 KR100573689 B1 KR 100573689B1
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- phase shift
- transmittance
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (8)
- 투명기판 위에 노광광을 투과시키는 광 투과부와, 노광광의 일부를 투과시킴과 동시에 투과한 빛의 위상을 소정량 시프트시키는 위상 시프터부를 갖고, 상기 광 투과부와 위상 시프터부의 경계부 근방에서 각각을 투과한 빛이 서로 소멸하도록 광학 특성을 설계함으로써, 피노광체 표면에 전사되는 노광 패턴 경계부의 콘트라스트를 양호하게 유지, 개선할 수 있도록 한 하프톤형 위상 시프트 마스크를 제조하기 위하여 이용하는 하프톤형 위상 시프트 마스크 블랭크이며, 투명기판 위에 상기 하프톤 위상 시프터부를 형성하기 위한 위상 시프터막을 갖는 하프톤형 위상 시프트 마스크 블랭크에 있어서,상기 위상 시프트막은 주로 노광광의 위상을 제어하는 위상 조정층과, 상기 투명기판과 위상 조정층 사이에 형성되어 주로 노광광의 투과율을 제어하는 기능을 갖는 투과율 조정층을 가지며,상기 투과율 조정층의 막 두께가 90Å 이하인 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 1항에 있어서, 상기 투광율 조정층은 투명기판에 대한 에칭 선택비가 5 이상인 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 1항에 있어서, 상기 투과율 조정층은 염소계 가스를 이용한 드라이 에칭 을 행할 때의 투명기판에 대한 에칭 선택비가 5 이상인 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 1 내지 3항 중 어느 한 항에 기재된 하프톤형 위상 시프트 마스크 블랭크를 이용하여 제조된 하프톤형 위상 시프트 마스크.
- 투명기판 위에 노광광을 투과시키는 광 투과부와, 노광광의 일부를 투과시킴과 동시에 투과한 빛의 위상을 소정량 시프트시키는 위상 시프터부를 갖고, 상기 광투과부와 위상 시프터부의 경계부 근방에서 각각을 투과한 빛이 서로 소멸하도록 광학 특성을 설계함으로써, 피노광체 표면에 전사되는 노광 패턴 경계부의 콘트라스트를 양호하게 유지, 개선할 수 있도록 한 하프톤형 위상 시프트 마스크를 제조하기 위하여 이용하는 하프톤형 위상 시프트 마스크 블랭크이며, 투명기판 위에 상기 위상 시프터부를 형성하기 위한 위상 시프터막을 갖는 하프톤형 위상 시프트 마스크 블랭크에 있어서,상기 위상 시프터막의 표면 반사율의 변동폭이 노광광의 파장 내지 700nm에 서 20% 이내인 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 5항에 있어서, 상기 위상 시프터막은 주로 노광광의 위상을 제어하는 위상 조정층과, 상기 투명기판과 위상 조정층 사이에 형성되어 주로 노광광의 투과율을 제어하는 기능을 갖는 투과율 조정층을 포함하는 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 6항에 있어서, 상기 위상 시프터막은 위상 조정층이 금속, 실리콘, 및 산소 및/또는 질소를 함유하는 것을 특징으로 하는 하프톤형 위상 시프트 마스크 블랭크.
- 제 5 내지 7항 중 어느 한 항에 기재된 하프톤형 위상 마스크 블랭크를 이용하여 제조된 것을 특징으로 하는 하프톤형 위상 시프트 마스크.
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JPJP-P-2002-00127468 | 2002-04-26 | ||
JP2002127445A JP4014922B2 (ja) | 2002-04-26 | 2002-04-26 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
JP2002127470A JP4290386B2 (ja) | 2002-04-26 | 2002-04-26 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
JP2002127454A JP2003322947A (ja) | 2002-04-26 | 2002-04-26 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
JPJP-P-2002-00127454 | 2002-04-26 | ||
JP2002127468A JP4707922B2 (ja) | 2002-04-26 | 2002-04-26 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
JPJP-P-2002-00127445 | 2002-04-26 | ||
JPJP-P-2002-00127470 | 2002-04-26 |
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KR1020030026428A Division KR100597655B1 (ko) | 2002-04-26 | 2003-04-25 | 하프톤형 위상 시프트 마스크 블랭크 및 하프톤형 위상시프트 마스크 |
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KR20060026923A KR20060026923A (ko) | 2006-03-24 |
KR100573689B1 true KR100573689B1 (ko) | 2006-04-24 |
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KR1020060013523A KR100573689B1 (ko) | 2002-04-26 | 2006-02-13 | 하프톤형 위상 시프트 마스크 블랭크 및 하프톤형 위상시프트 마스크 |
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US (1) | US7011910B2 (ko) |
KR (2) | KR100597655B1 (ko) |
TW (1) | TW591326B (ko) |
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-
2003
- 2003-04-24 US US10/421,944 patent/US7011910B2/en not_active Expired - Lifetime
- 2003-04-25 KR KR1020030026428A patent/KR100597655B1/ko active IP Right Review Request
- 2003-04-25 TW TW092109688A patent/TW591326B/zh not_active IP Right Cessation
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US20040086788A1 (en) | 2004-05-06 |
KR20030084781A (ko) | 2003-11-01 |
TW200400416A (en) | 2004-01-01 |
TW591326B (en) | 2004-06-11 |
KR20060026923A (ko) | 2006-03-24 |
KR100597655B1 (ko) | 2006-07-06 |
US7011910B2 (en) | 2006-03-14 |
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