KR100564087B1 - 비균일자계를갖는자기적으로보강된플라즈마챔버 - Google Patents

비균일자계를갖는자기적으로보강된플라즈마챔버 Download PDF

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Publication number
KR100564087B1
KR100564087B1 KR1019970081056A KR19970081056A KR100564087B1 KR 100564087 B1 KR100564087 B1 KR 100564087B1 KR 1019970081056 A KR1019970081056 A KR 1019970081056A KR 19970081056 A KR19970081056 A KR 19970081056A KR 100564087 B1 KR100564087 B1 KR 100564087B1
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South Korea
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workpiece
pole
current
magnetic field
region
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Expired - Fee Related
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KR1019970081056A
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English (en)
Korean (ko)
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KR19980070306A (ko
Inventor
홍칭 샹
로저 린들리
클래스 비요르크만
추 유 쾅
리차드 플래비달
브리앙 푸
지 딩
종규 리
쾅-한 케
마이클 웰치
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/241—High voltage power supply or regulation circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019970081056A 1997-01-02 1997-12-31 비균일자계를갖는자기적으로보강된플라즈마챔버 Expired - Fee Related KR100564087B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/735,444 1997-01-02
US08/735,444 US6113731A (en) 1997-01-02 1997-01-02 Magnetically-enhanced plasma chamber with non-uniform magnetic field
US08/735444 1997-01-02

Publications (2)

Publication Number Publication Date
KR19980070306A KR19980070306A (ko) 1998-10-26
KR100564087B1 true KR100564087B1 (ko) 2006-11-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970081056A Expired - Fee Related KR100564087B1 (ko) 1997-01-02 1997-12-31 비균일자계를갖는자기적으로보강된플라즈마챔버

Country Status (5)

Country Link
US (1) US6113731A (https=)
EP (1) EP0852389A3 (https=)
JP (2) JP4387471B2 (https=)
KR (1) KR100564087B1 (https=)
TW (1) TW439110B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170035650A (ko) * 2015-09-23 2017-03-31 삼성전자주식회사 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법

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KR20170035650A (ko) * 2015-09-23 2017-03-31 삼성전자주식회사 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법
KR102334378B1 (ko) 2015-09-23 2021-12-02 삼성전자 주식회사 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법

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JP4932811B2 (ja) 2012-05-16
KR19980070306A (ko) 1998-10-26
JP4387471B2 (ja) 2009-12-16
EP0852389A2 (en) 1998-07-08
JP2009027194A (ja) 2009-02-05
EP0852389A3 (en) 2002-01-02
TW439110B (en) 2001-06-07
JPH10233390A (ja) 1998-09-02

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