KR100558049B1 - 전력 소자의 금속 배선 형성 방법 - Google Patents
전력 소자의 금속 배선 형성 방법 Download PDFInfo
- Publication number
- KR100558049B1 KR100558049B1 KR1020040001655A KR20040001655A KR100558049B1 KR 100558049 B1 KR100558049 B1 KR 100558049B1 KR 1020040001655 A KR1020040001655 A KR 1020040001655A KR 20040001655 A KR20040001655 A KR 20040001655A KR 100558049 B1 KR100558049 B1 KR 100558049B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- copper
- metal wiring
- forming
- interlayer insulating
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 39
- 239000002184 metal Substances 0.000 title claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 35
- 239000010937 tungsten Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 40
- 239000011229 interlayer Substances 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 63
- 238000005530 etching Methods 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000637 aluminium metallisation Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (3)
- 전력 소자가 형성된 반도체 기판상에 배리어막 및 제 1 층간 절연막을 순차적으로 형성하는 단계;상기 배리어막 및 상기 제 1 층간 절연막을 패터닝 하여 비아홀을 형성하는 단계;상기 비아홀이 매립되도록 전체 구조상에 250 내지 400℃의 온도와 0.01 내지 100Torr의 압력하에서 10 내지 100sccm의 SiH4 가스와 50 내지 5000sccm의 H2 가스와 5 내지 300sccm의 WF6 가스를 유입하여 선택 텅스텐을 형성하는 단계;평탄화 공정으로 상기 제 1 층간 절연막 상부의 상기 선택 텅스텐을 제거하여 선택 텅스텐 비아 플러그를 형성하는 단계;전체 구조상에 식각정지막 및 제 2 층간 절연막을 형성하는 단계;상기 선택 텅스텐 비아 플러그가 노출되도록 상기 식각정지막 및 상기 제 2 층간 절연막을 패터닝 하여 금속배선용 트렌치를 형성하는 단계; 및상기 금속배선용 트렌치를 구리막으로 매립 평탄화 하여 구리 금속배선을 형성하는 단계를 포함하는 전력 소자의 금속 배선 형성 방법.
- 삭제
- 제 1 항에 있어서, 상기 구리 금속배선은,전체 구조상에 그 단차를 따라 100 내지 500Å 두께의 확산 방지막과 500 내지 1500Å 두께의 구리 씨드막을 형성하는 단계;금속도금을 통해 상기 구리 씨드막 상에 15000 내지 20000Å 두께의 상기 구리막을 형성하는 단계;N2(10L)/H2(1L) 분위기와 약 150℃ 온도하에서 1 내지 180분 동안 열처리 공정을 실시하는 단계; 및평탄화 공정을 실시하여 상기 제 2 층간 절연막 상의 상기 확산 방지막, 상기 구리씨드막 및 상기 구리막을 제거하는 단계를 포함하는 전력 소자의 금속배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040001655A KR100558049B1 (ko) | 2004-01-09 | 2004-01-09 | 전력 소자의 금속 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040001655A KR100558049B1 (ko) | 2004-01-09 | 2004-01-09 | 전력 소자의 금속 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050073300A KR20050073300A (ko) | 2005-07-13 |
KR100558049B1 true KR100558049B1 (ko) | 2006-03-07 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020040001655A KR100558049B1 (ko) | 2004-01-09 | 2004-01-09 | 전력 소자의 금속 배선 형성 방법 |
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KR (1) | KR100558049B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10211093B2 (en) * | 2016-07-08 | 2019-02-19 | Samsung Electronics Co., Ltd. | Interconnect structure formed with a high aspect ratio single damascene copper line on a non-damascene via |
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- 2004-01-09 KR KR1020040001655A patent/KR100558049B1/ko active IP Right Grant
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KR20050073300A (ko) | 2005-07-13 |
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