KR100537362B1 - 활성 에너지선성(線性) 조성물 및 패턴 형성방법 - Google Patents

활성 에너지선성(線性) 조성물 및 패턴 형성방법 Download PDF

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Publication number
KR100537362B1
KR100537362B1 KR10-2004-7003469A KR20047003469A KR100537362B1 KR 100537362 B1 KR100537362 B1 KR 100537362B1 KR 20047003469 A KR20047003469 A KR 20047003469A KR 100537362 B1 KR100537362 B1 KR 100537362B1
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KR
South Korea
Prior art keywords
group
energy ray
active energy
polymer
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2004-7003469A
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English (en)
Korean (ko)
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KR20040044868A (ko
Inventor
이와시마치아키
이마이겐지
하세가와다케야
Original Assignee
간사이 페인트 가부시키가이샤
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Publication of KR20040044868A publication Critical patent/KR20040044868A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/062—Polyethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F291/00—Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds according to more than one of the groups C08F251/00 - C08F289/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Graft Or Block Polymers (AREA)
  • Polymerisation Methods In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR10-2004-7003469A 2001-09-11 2002-09-10 활성 에너지선성(線性) 조성물 및 패턴 형성방법 Expired - Fee Related KR100537362B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00275245 2001-09-11
JPJP-P-2001-00275244 2001-09-11
JP2001275244 2001-09-11
JP2001275245 2001-09-11
PCT/JP2002/009185 WO2003025674A1 (en) 2001-09-11 2002-09-10 Composition for actinic energy ray and method of forming pattern

Publications (2)

Publication Number Publication Date
KR20040044868A KR20040044868A (ko) 2004-05-31
KR100537362B1 true KR100537362B1 (ko) 2005-12-16

Family

ID=26622008

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7003469A Expired - Fee Related KR100537362B1 (ko) 2001-09-11 2002-09-10 활성 에너지선성(線性) 조성물 및 패턴 형성방법

Country Status (5)

Country Link
US (1) US7078158B2 (https=)
JP (1) JP3890052B2 (https=)
KR (1) KR100537362B1 (https=)
TW (1) TWI309340B (https=)
WO (1) WO2003025674A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005173369A (ja) 2003-12-12 2005-06-30 Tokyo Ohka Kogyo Co Ltd レジストパターンの剥離方法
US8501393B2 (en) * 2004-05-14 2013-08-06 Nissan Chemical Industries, Ltd. Anti-reflective coating forming composition containing vinyl ether compound
KR100688570B1 (ko) * 2005-08-31 2007-03-02 삼성전자주식회사 식각 마스크 패턴 형성용 코팅 조성물 및 이를 이용한반도체 소자의 미세 패턴 형성 방법
KR101406382B1 (ko) * 2011-03-17 2014-06-13 이윤형 화학증폭형 포지티브 감광형 유기절연막 조성물 및 이를 이용한 유기절연막의 형성방법
JP6073626B2 (ja) * 2012-09-28 2017-02-01 旭化成株式会社 感光性樹脂組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06230574A (ja) * 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
US5496678A (en) 1993-04-16 1996-03-05 Kansai Paint Co., Ltd. Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator
JP2824188B2 (ja) * 1993-04-23 1998-11-11 関西ペイント株式会社 感光性組成物及びパターンの製造方法
JP3198915B2 (ja) 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JPH10279513A (ja) * 1997-04-07 1998-10-20 Denki Kagaku Kogyo Kk 水素化ビスフェノールａ−ジビニルエーテルおよびその製造方法
JP2000267285A (ja) * 1999-03-19 2000-09-29 Kansai Paint Co Ltd 感光性組成物及びパターンの形成方法

Also Published As

Publication number Publication date
US7078158B2 (en) 2006-07-18
WO2003025674A1 (en) 2003-03-27
JPWO2003025674A1 (ja) 2004-12-24
US20040248037A1 (en) 2004-12-09
KR20040044868A (ko) 2004-05-31
TWI309340B (https=) 2009-05-01
JP3890052B2 (ja) 2007-03-07

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