JP3890052B2 - 活性エネルギー線性組成物及びパターン形成方法 - Google Patents
活性エネルギー線性組成物及びパターン形成方法 Download PDFInfo
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- JP3890052B2 JP3890052B2 JP2003529243A JP2003529243A JP3890052B2 JP 3890052 B2 JP3890052 B2 JP 3890052B2 JP 2003529243 A JP2003529243 A JP 2003529243A JP 2003529243 A JP2003529243 A JP 2003529243A JP 3890052 B2 JP3890052 B2 JP 3890052B2
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/062—Polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F291/00—Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds according to more than one of the groups C08F251/00 - C08F289/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Graft Or Block Polymers (AREA)
- Polymerisation Methods In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001275245 | 2001-09-11 | ||
| JP2001275244 | 2001-09-11 | ||
| JP2001275244 | 2001-09-11 | ||
| JP2001275245 | 2001-09-11 | ||
| PCT/JP2002/009185 WO2003025674A1 (en) | 2001-09-11 | 2002-09-10 | Composition for actinic energy ray and method of forming pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2003025674A1 JPWO2003025674A1 (ja) | 2004-12-24 |
| JP3890052B2 true JP3890052B2 (ja) | 2007-03-07 |
Family
ID=26622008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003529243A Expired - Fee Related JP3890052B2 (ja) | 2001-09-11 | 2002-09-10 | 活性エネルギー線性組成物及びパターン形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7078158B2 (https=) |
| JP (1) | JP3890052B2 (https=) |
| KR (1) | KR100537362B1 (https=) |
| TW (1) | TWI309340B (https=) |
| WO (1) | WO2003025674A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005173369A (ja) | 2003-12-12 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの剥離方法 |
| US8501393B2 (en) * | 2004-05-14 | 2013-08-06 | Nissan Chemical Industries, Ltd. | Anti-reflective coating forming composition containing vinyl ether compound |
| KR100688570B1 (ko) * | 2005-08-31 | 2007-03-02 | 삼성전자주식회사 | 식각 마스크 패턴 형성용 코팅 조성물 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
| KR101406382B1 (ko) * | 2011-03-17 | 2014-06-13 | 이윤형 | 화학증폭형 포지티브 감광형 유기절연막 조성물 및 이를 이용한 유기절연막의 형성방법 |
| JP6073626B2 (ja) * | 2012-09-28 | 2017-02-01 | 旭化成株式会社 | 感光性樹脂組成物 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06230574A (ja) * | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| US5496678A (en) | 1993-04-16 | 1996-03-05 | Kansai Paint Co., Ltd. | Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator |
| JP2824188B2 (ja) * | 1993-04-23 | 1998-11-11 | 関西ペイント株式会社 | 感光性組成物及びパターンの製造方法 |
| JP3198915B2 (ja) | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| JPH10279513A (ja) * | 1997-04-07 | 1998-10-20 | Denki Kagaku Kogyo Kk | 水素化ビスフェノールａ−ジビニルエーテルおよびその製造方法 |
| JP2000267285A (ja) * | 1999-03-19 | 2000-09-29 | Kansai Paint Co Ltd | 感光性組成物及びパターンの形成方法 |
-
2002
- 2002-09-10 US US10/488,469 patent/US7078158B2/en not_active Expired - Fee Related
- 2002-09-10 WO PCT/JP2002/009185 patent/WO2003025674A1/ja not_active Ceased
- 2002-09-10 JP JP2003529243A patent/JP3890052B2/ja not_active Expired - Fee Related
- 2002-09-10 KR KR10-2004-7003469A patent/KR100537362B1/ko not_active Expired - Fee Related
- 2002-09-11 TW TW091120916A patent/TWI309340B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7078158B2 (en) | 2006-07-18 |
| WO2003025674A1 (en) | 2003-03-27 |
| JPWO2003025674A1 (ja) | 2004-12-24 |
| US20040248037A1 (en) | 2004-12-09 |
| KR20040044868A (ko) | 2004-05-31 |
| TWI309340B (https=) | 2009-05-01 |
| KR100537362B1 (ko) | 2005-12-16 |
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