KR100516776B1 - 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 - Google Patents

반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 Download PDF

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Publication number
KR100516776B1
KR100516776B1 KR10-2001-7006569A KR20017006569A KR100516776B1 KR 100516776 B1 KR100516776 B1 KR 100516776B1 KR 20017006569 A KR20017006569 A KR 20017006569A KR 100516776 B1 KR100516776 B1 KR 100516776B1
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KR
South Korea
Prior art keywords
delete delete
wafer
wafer chuck
electroplating
assembly
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-7006569A
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English (en)
Korean (ko)
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KR20010086051A (ko
Inventor
휴이 왕
필릭스 굿맨
보하 누치
Original Assignee
에이씨엠 리서치, 인코포레이티드
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Publication of KR20010086051A publication Critical patent/KR20010086051A/ko
Application granted granted Critical
Publication of KR100516776B1 publication Critical patent/KR100516776B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
KR10-2001-7006569A 1998-11-28 1999-11-24 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 Expired - Fee Related KR100516776B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11013698P 1998-11-28 1998-11-28
US60/110,136 1998-11-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7011238A Division KR100503553B1 (ko) 1998-11-28 1999-11-24 반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치

Publications (2)

Publication Number Publication Date
KR20010086051A KR20010086051A (ko) 2001-09-07
KR100516776B1 true KR100516776B1 (ko) 2005-09-26

Family

ID=22331393

Family Applications (3)

Application Number Title Priority Date Filing Date
KR10-2001-7006569A Expired - Fee Related KR100516776B1 (ko) 1998-11-28 1999-11-24 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치
KR1020057000594A Expired - Fee Related KR100562011B1 (ko) 1998-11-28 1999-11-24 전기도금 및/또는 전기연마 스테이션
KR10-2004-7011238A Expired - Fee Related KR100503553B1 (ko) 1998-11-28 1999-11-24 반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020057000594A Expired - Fee Related KR100562011B1 (ko) 1998-11-28 1999-11-24 전기도금 및/또는 전기연마 스테이션
KR10-2004-7011238A Expired - Fee Related KR100503553B1 (ko) 1998-11-28 1999-11-24 반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치

Country Status (9)

Country Link
EP (1) EP1133786A2 (enExample)
JP (2) JP2002531702A (enExample)
KR (3) KR100516776B1 (enExample)
CN (2) CN1191605C (enExample)
AU (1) AU3105400A (enExample)
CA (1) CA2352160A1 (enExample)
IL (1) IL143316A (enExample)
TW (1) TW430919B (enExample)
WO (1) WO2000033356A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180087194A (ko) * 2017-01-24 2018-08-01 에스피티에스 테크놀러지스 리미티드 반도체 기판들을 전기화학적으로 처리하기 위한 장치

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1052062A1 (en) 1999-05-03 2000-11-15 Applied Materials, Inc. Pré-conditioning fixed abrasive articles
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
JP4644926B2 (ja) * 2000-10-13 2011-03-09 ソニー株式会社 半導体製造装置および半導体装置の製造方法
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002083995A1 (en) * 2001-04-12 2002-10-24 Arthur, Keigler Method of and apparatus for controlling fluid flow
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US7150816B2 (en) * 2001-08-31 2006-12-19 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
TW200949918A (en) * 2002-07-22 2009-12-01 Acm Res Inc Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
JP3860111B2 (ja) * 2002-12-19 2006-12-20 大日本スクリーン製造株式会社 メッキ装置およびメッキ方法
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US8804535B2 (en) * 2009-03-25 2014-08-12 Avaya Inc. System and method for sending packets using another device's network address
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
KR101211826B1 (ko) * 2010-06-14 2012-12-18 연세대학교 산학협력단 자기유변유체를 이용한 피가공물의 연마장치 및 그 연마방법
JP5782398B2 (ja) * 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
US9399827B2 (en) 2013-04-29 2016-07-26 Applied Materials, Inc. Microelectronic substrate electro processing system
US10227705B2 (en) 2013-05-09 2019-03-12 Acm Research (Shanghai) Inc. Apparatus and method for plating and/or polishing wafer
KR101353378B1 (ko) * 2013-08-19 2014-01-22 주식회사 케이엠 주사기용 믹싱 조인트
CN104465481A (zh) * 2013-09-22 2015-03-25 盛美半导体设备（上海）有限公司 晶圆夹盘
CN105297127B (zh) * 2014-05-30 2019-04-05 盛美半导体设备（上海）有限公司 带有电极的喷头装置
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
US10053793B2 (en) * 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
KR102156430B1 (ko) * 2020-04-28 2020-09-15 주식회사 스마트코리아피씨비 회전식 기판 도금장치
EP3998374A4 (en) 2020-09-16 2022-08-03 Changxin Memory Technologies, Inc. DEVICE AND METHOD FOR AIR LEAK DETECTION AND METHOD FOR ELECTROPLATING WAFER
CN114262920A (zh) * 2020-09-16 2022-04-01 长鑫存储技术有限公司 晶圆电镀设备、漏气检测装置和方法、晶圆电镀方法
CN112144096B (zh) * 2020-09-25 2022-05-10 深圳市生利科技有限公司 一种锌镍合金电镀设备
CN113013078A (zh) * 2021-03-04 2021-06-22 苏州竣合信半导体科技有限公司 一种用于芯片定位的兼容芯片定位槽及其使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419649A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Wafer holding jig for electrtolytic plating
JPS58181898A (ja) * 1982-04-14 1983-10-24 Fujitsu Ltd メツキ用給電装置
JPS6396292A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 電解メツキ装置
JPH0375394A (ja) * 1989-08-18 1991-03-29 Fujitsu Ltd メッキ装置
JPH03232994A (ja) * 1990-02-06 1991-10-16 Fujitsu Ltd メッキ装置
JP2567716B2 (ja) * 1990-03-20 1996-12-25 富士通株式会社 電気メッキ装置
JP2608485B2 (ja) * 1990-05-30 1997-05-07 富士通株式会社 めっき装置
DE4024576A1 (de) * 1990-08-02 1992-02-06 Bosch Gmbh Robert Vorrichtung zum einseitigen aetzen einer halbleiterscheibe
JPH04186630A (ja) * 1990-11-19 1992-07-03 Oki Electric Ind Co Ltd 半導体ウエハのバンプ電極めっき装置
JP2704796B2 (ja) * 1991-04-22 1998-01-26 株式会社東芝 半導体ウェハめっき用治具
JPH05243236A (ja) * 1992-03-03 1993-09-21 Fujitsu Ltd 電気メッキ装置
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5670034A (en) * 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5980706A (en) * 1996-07-15 1999-11-09 Semitool, Inc. Electrode semiconductor workpiece holder
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3627884B2 (ja) * 1996-10-17 2005-03-09 株式会社デンソー メッキ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180087194A (ko) * 2017-01-24 2018-08-01 에스피티에스 테크놀러지스 리미티드 반도체 기판들을 전기화학적으로 처리하기 위한 장치
KR102463961B1 (ko) * 2017-01-24 2022-11-04 에스피티에스 테크놀러지스 리미티드 반도체 기판들을 전기화학적으로 처리하기 위한 장치

Also Published As

Publication number Publication date
CN1632914A (zh) 2005-06-29
EP1133786A2 (en) 2001-09-19
CN1191605C (zh) 2005-03-02
JP2007119923A (ja) 2007-05-17
IL143316A (en) 2005-03-20
KR100562011B1 (ko) 2006-03-22
WO2000033356A3 (en) 2001-07-12
WO2000033356A9 (en) 2001-08-02
CN1346510A (zh) 2002-04-24
IL143316A0 (en) 2002-04-21
CN100382235C (zh) 2008-04-16
TW430919B (en) 2001-04-21
JP2002531702A (ja) 2002-09-24
KR20050013179A (ko) 2005-02-02
KR20040070317A (ko) 2004-08-06
CA2352160A1 (en) 2000-06-08
AU3105400A (en) 2000-06-19
KR100503553B1 (ko) 2005-07-26
KR20010086051A (ko) 2001-09-07
WO2000033356A2 (en) 2000-06-08

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