KR100480876B1 - 신규의 압전 단결정을 이용한 초음파 탐촉자 - Google Patents
신규의 압전 단결정을 이용한 초음파 탐촉자 Download PDFInfo
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- KR100480876B1 KR100480876B1 KR10-2001-0070930A KR20010070930A KR100480876B1 KR 100480876 B1 KR100480876 B1 KR 100480876B1 KR 20010070930 A KR20010070930 A KR 20010070930A KR 100480876 B1 KR100480876 B1 KR 100480876B1
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- KR
- South Korea
- Prior art keywords
- single crystal
- ultrasonic
- piezoelectric element
- piezoelectric
- ultrasonic transducer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
반응원료 | x[A]0.65<x<0.98x: molx+y+z=1 | y[B]0.01<y<0.34y:mol | z[C]0.01<z<0.1z:mol | p[P]0.01<p<5p: w/w%=P/(A+B+C) | n[N]0.01<n<5n: w/w%=N/(A+B+C) | 조성식 | |
[A]:[Pb(Mg1/3Nb2/3)O3] [Pb(Zn1/3Nb2/3)O3] | [B]PbTiO3 | [C]LiTaO3 | [P]:PtAgAuPdRh | [N]:NiOCoFe2O3ScOSrORuO2CuOCdO | x[A]y[B]z[C]-p[P]n[N] | ||
제조예 | 1 | [Pb(Mg1/3Nb2/3)O3]0.65몰 | 0.33몰 | 0.02몰 | Pt 1중량% | NiO 1 중량% | MPN |
2 | [Pb(Mg1/3Nb2/3)O3]0.66몰 | 0.33몰 | 0.02몰 | Ag 1중량% | NiO 1 중량% | MAN | |
3 | [Pb(Zn1/3Nb2/3)O3]0.89몰 | 0.09몰 | 0.02몰 | Pt 1중량% | NiO 1 중량% | ZPN | |
4 | [Pb(Zn1/3Nb2/3)O3]0.89몰 | 0.09몰 | 0.02몰 | Ag 1중량% | NiO 1 중량% | ZAN | |
MPN : 0.65[Pb(Mg1/3Nb2/3)O3] 0.33[PbTiO3]0.02[LiTaO3]-1[Pt]1[NiO]MAN : 0.80[Pb(Mg1/3Nb2/3)O3] 0.18[PbTiO3]0.02[LiTaO3]-1[Ag]1[NiO]ZPN : 0.89[Pb(Zn1/3Nb2/3)O3]0.09[PbTiO3]0.02[LiTaO3]-1[Pt]1[NiO]ZAN : 0.89[Pb(Zn1/3Nb2/3)O3]0.09[PbTiO3]0.02[LiTaO3]-1[Ag]1[NiO] |
PMN-PT 탐촉자(실시예 1) | PZT 탐촉자(대조구) | |
상대 감도(dB) | 3.59 | 0 |
중심 주파수 | 3.03 | 2.76 |
-6dB 대역폭(%) | 101.9 | 72.0 |
Claims (8)
- 압전 단결정으로 이루어진 압전 요소(1) 및 상기 압전 요소의 초음파 송/수신면과 그 반대쪽 면에 각각 형성된 한 쌍의 전극(2a, 2b)으로 구성된 초음파 송/수신소자를 포함하는 초음파 탐촉자에 있어서, 상기 압전 단결정이 하기 화학식 1의 조성을 가짐을 특징으로 하는 초음파 탐촉자:화학식 1x[A]y[B]z[C]p[P]n[N]상기 식에서,[A]는 납 마그네슘 나이오베이트[Pb(Mg1/3Nb2/3)O3] 또는 납 아연 나이오베이트[Pb(Zn1/3 Nb2/3)O3]이고,[B]는 납 타이타네이트[PbTiO3]이며,[C]는 리튬 탄탈레이트[LiTaO3] 또는 리튬 나이오베이트[LiNbO3]이고,[P]는 백금, 금, 은, 팔라디움 및 로디움으로 이루어진 군 중에서 선택된 하나의 금속이며,[N]은 니켈, 코발트, 철, 스트론티움, 스칸디움, 루쎄니움, 구리 및 카드뮴으로 이루어진 군 중에서 선택된 하나의 금속의 산화물이고,x는 0.65 보다 크고 0.98 보다 작은 수이며,y는 0.01 보다 크고 0.34 보다 작은 수이고,z는 0.01 보다 크고 0.1 보다 작은 수이며,p 및 n은 각각 0.01 보다 크고 5 보다 작은 수이고,상기 x, y, 및 z은 각 성분의 몰수를 나타내고, x + y + z 은 1이며, 상기 p 및 n은 각 성분의 중량%를 나타낸다.
- 제1항에 있어서,압전 요소(1)의 초음파 송/수신면의 방향이 (001)임을 특징으로 하는, 초음파 탐촉자.
- 제1항에 있어서,압전 요소(1)가 진동방향으로 20 내지 500,000㎛의 두께를 가짐을 특징으로 하는, 초음파 탐촉자.
- 제1항에 있어서,초음파 송/수신 소자가 하나 이상 배열된 어레이(array) 형태임을 특징으로 하는, 초음파 탐촉자.
- 제4항에 있어서,압전 요소(1)의 초음파 송/수신면의 방향이 (001)임을 특징으로 하는, 초음파 탐촉자.
- 제4항에 있어서,압전 요소(1)가 진동방향으로 20 내지 2,000㎛의 두께를 가짐을 특징으로 하는, 초음파 탐촉자.
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0070930A KR100480876B1 (ko) | 2001-11-15 | 2001-11-15 | 신규의 압전 단결정을 이용한 초음파 탐촉자 |
PCT/KR2002/002126 WO2003042687A1 (en) | 2001-11-15 | 2002-11-14 | Ultrasonic probe |
US10/845,928 US6951135B2 (en) | 2001-11-15 | 2004-05-14 | Ultrasonic probe and method for the fabrication thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0070930A KR100480876B1 (ko) | 2001-11-15 | 2001-11-15 | 신규의 압전 단결정을 이용한 초음파 탐촉자 |
Publications (2)
Publication Number | Publication Date |
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KR20030040592A KR20030040592A (ko) | 2003-05-23 |
KR100480876B1 true KR100480876B1 (ko) | 2005-04-07 |
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KR10-2001-0070930A KR100480876B1 (ko) | 2001-11-15 | 2001-11-15 | 신규의 압전 단결정을 이용한 초음파 탐촉자 |
Country Status (3)
Country | Link |
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US (1) | US6951135B2 (ko) |
KR (1) | KR100480876B1 (ko) |
WO (1) | WO2003042687A1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4523328B2 (ja) * | 2004-04-28 | 2010-08-11 | 日本電波工業株式会社 | 超音波探触子 |
US9369105B1 (en) * | 2007-08-31 | 2016-06-14 | Rf Micro Devices, Inc. | Method for manufacturing a vibrating MEMS circuit |
US9385685B2 (en) | 2007-08-31 | 2016-07-05 | Rf Micro Devices, Inc. | MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer |
US9391588B2 (en) | 2007-08-31 | 2016-07-12 | Rf Micro Devices, Inc. | MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer |
JP2009082612A (ja) * | 2007-10-02 | 2009-04-23 | Toshiba Corp | 超音波探触子及び圧電振動子 |
US9466430B2 (en) | 2012-11-02 | 2016-10-11 | Qorvo Us, Inc. | Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs |
CN103479395A (zh) * | 2013-09-30 | 2014-01-01 | 苏州边枫电子科技有限公司 | 带水膜层的恒温探头 |
KR101560558B1 (ko) | 2014-01-29 | 2015-10-16 | 서강대학교산학협력단 | 혈관 삽입형 초음파 변환자 및 이에 따른 초음파 변환자 구조체 |
US9991872B2 (en) | 2014-04-04 | 2018-06-05 | Qorvo Us, Inc. | MEMS resonator with functional layers |
US9998088B2 (en) | 2014-05-02 | 2018-06-12 | Qorvo Us, Inc. | Enhanced MEMS vibrating device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US3998748A (en) * | 1974-07-18 | 1976-12-21 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric ceramic compositions |
JP2543021B2 (ja) * | 1984-12-17 | 1996-10-16 | 株式会社日本自動車部品総合研究所 | アクチュエ−タ用セラミツク圧電材料 |
JP2502685B2 (ja) * | 1988-06-15 | 1996-05-29 | 松下電器産業株式会社 | 超音波探触子の製造方法 |
US5410209A (en) * | 1993-01-27 | 1995-04-25 | Kabushiki Kaisha Toshiba | Piezoelectric material and ultrasonic probe |
JP3345580B2 (ja) * | 1998-03-05 | 2002-11-18 | 株式会社東芝 | 超音波プローブの製造方法 |
JP3419327B2 (ja) * | 1998-11-04 | 2003-06-23 | 松下電器産業株式会社 | 磁器材料及び超音波探触子及び圧電振動子及びそれらの製造方法 |
US6362558B1 (en) * | 1999-12-24 | 2002-03-26 | Kansai Research Institute | Piezoelectric element, process for producing the same and ink jet recording head |
KR100400630B1 (ko) * | 2000-04-03 | 2003-10-04 | (주)아이블포토닉스 | 새로운 압전 단결정 기판을 사용한 표면탄성파 필터 |
JP4298232B2 (ja) * | 2002-07-25 | 2009-07-15 | 株式会社村田製作所 | 圧電磁器組成物、及び圧電素子 |
JP2004059369A (ja) * | 2002-07-29 | 2004-02-26 | Brother Ind Ltd | 圧電磁器組成物及びこれを用いたインクジェットヘッド用圧電アクチュエータ |
-
2001
- 2001-11-15 KR KR10-2001-0070930A patent/KR100480876B1/ko active IP Right Grant
-
2002
- 2002-11-14 WO PCT/KR2002/002126 patent/WO2003042687A1/en not_active Application Discontinuation
-
2004
- 2004-05-14 US US10/845,928 patent/US6951135B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2003042687A1 (en) | 2003-05-22 |
KR20030040592A (ko) | 2003-05-23 |
US6951135B2 (en) | 2005-10-04 |
US20040206183A1 (en) | 2004-10-21 |
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