KR100466422B1 - Cmp용 조성물 - Google Patents
Cmp용 조성물 Download PDFInfo
- Publication number
- KR100466422B1 KR100466422B1 KR20000020411A KR20000020411A KR100466422B1 KR 100466422 B1 KR100466422 B1 KR 100466422B1 KR 20000020411 A KR20000020411 A KR 20000020411A KR 20000020411 A KR20000020411 A KR 20000020411A KR 100466422 B1 KR100466422 B1 KR 100466422B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- composition
- cmp
- weight
- slurry
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
Claims (3)
- (A)금속 산화물 0.1 - 50중량%,(B)탈이온수 50 - 99.9중량%,(C) 하기 화학식 1로 표시되는 폴리에틸렌(프로필렌)글리콜의 공중합체 및/또는 하기 화학식 2로 표시되는 폴리페닐렌 옥사이드(A)+(B) 100중량부에 대하여 0.001 - 5중량부,를 포함하는 것을 특징으로 하는 CMP용 조성물.[화학식 1](상기 화학식중 m은 각각 2 - 100이다.)[화학식 2](상기 화학식중 n은 2-100; R1및 R2는 각각 독립적으로 C1-20의 알킬기 또는 알릴기를 나타낸다.)
- 제 1항에 있어서, 상기 금속 산화물이 실리카(SiO2), 알루미나(Al2O3), 산화세륨(CeO2), 산화 지르코늄(ZrO2), 산화 티타늄(TiO2)으로 이루어진 군으로부터 선택된 것을 특징으로 하는 CMP용 조성물.
- 제 1항에 있어서, 상기 금속 산화물의 1차 입자의 입도가 10 - 100㎚이며, 2차 입자의 입도가 50 - 250㎚인 것을 특징으로 하는 CMP용 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20000020411A KR100466422B1 (ko) | 2000-04-18 | 2000-04-18 | Cmp용 조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20000020411A KR100466422B1 (ko) | 2000-04-18 | 2000-04-18 | Cmp용 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010096326A KR20010096326A (ko) | 2001-11-07 |
KR100466422B1 true KR100466422B1 (ko) | 2005-01-13 |
Family
ID=19665229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20000020411A KR100466422B1 (ko) | 2000-04-18 | 2000-04-18 | Cmp용 조성물 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100466422B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9080079B2 (en) | 2009-04-22 | 2015-07-14 | Lg Chem, Ltd. | Slurry for chemical mechanical polishing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0633042A (ja) * | 1992-07-14 | 1994-02-08 | Fujimi Inkooporeetetsudo:Kk | 磁気ディスク用基板のテクスチャリング用研磨組成物 |
JPH0711239A (ja) * | 1993-06-25 | 1995-01-13 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH09143455A (ja) * | 1995-09-21 | 1997-06-03 | Mitsubishi Chem Corp | ハードディスク基板の研磨用組成物及びこれを用いる研磨方法 |
JP2000017251A (ja) * | 1998-07-01 | 2000-01-18 | Neos Co Ltd | 研磨用水性組成物 |
KR20000074300A (ko) * | 1999-05-19 | 2000-12-15 | 유현식 | 연마용 조성물 |
-
2000
- 2000-04-18 KR KR20000020411A patent/KR100466422B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0633042A (ja) * | 1992-07-14 | 1994-02-08 | Fujimi Inkooporeetetsudo:Kk | 磁気ディスク用基板のテクスチャリング用研磨組成物 |
JPH0711239A (ja) * | 1993-06-25 | 1995-01-13 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH09143455A (ja) * | 1995-09-21 | 1997-06-03 | Mitsubishi Chem Corp | ハードディスク基板の研磨用組成物及びこれを用いる研磨方法 |
JP2000017251A (ja) * | 1998-07-01 | 2000-01-18 | Neos Co Ltd | 研磨用水性組成物 |
KR20000074300A (ko) * | 1999-05-19 | 2000-12-15 | 유현식 | 연마용 조성물 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9080079B2 (en) | 2009-04-22 | 2015-07-14 | Lg Chem, Ltd. | Slurry for chemical mechanical polishing |
Also Published As
Publication number | Publication date |
---|---|
KR20010096326A (ko) | 2001-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5038199B2 (ja) | 酸化物cmpのための組成物 | |
TW201632605A (zh) | Cmp研磨液、基板的研磨方法及電子零件 | |
KR20010046395A (ko) | 연마용 조성물 | |
US20070102664A1 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
JP5516594B2 (ja) | Cmp研磨液、並びに、これを用いた研磨方法及び半導体基板の製造方法 | |
EP2092034B1 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
US8512593B2 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
JP2005048125A (ja) | Cmp研磨剤、研磨方法及び半導体装置の製造方法 | |
KR100761649B1 (ko) | 연마용 조성물 | |
KR100313573B1 (ko) | 연마용 조성물 | |
KR100466422B1 (ko) | Cmp용 조성물 | |
KR100366304B1 (ko) | 반도체 웨이퍼 절연층의 화학적 기계적 연마용 조성물 | |
KR20170072524A (ko) | 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법 | |
KR100497410B1 (ko) | 연마성능이 개선된 산화막 연마용 슬러리 조성물 | |
KR20030043198A (ko) | 절연층 연마용 슬러리 조성물 | |
KR100367830B1 (ko) | Cmp용 조성물 | |
KR100599855B1 (ko) | 연마용 조성물 | |
JP4878728B2 (ja) | Cmp研磨剤および基板の研磨方法 | |
KR100561568B1 (ko) | Cmp용 조성물 | |
KR100740898B1 (ko) | 절연막 연마 속도를 증가시킨 cmp 연마용 슬러리 조성물 | |
JP2005048122A (ja) | Cmp研磨剤、研磨方法及び半導体装置の製造方法 | |
KR20070090128A (ko) | 연마용 조성물 | |
KR100565419B1 (ko) | 연마용 조성물 | |
KR20020008933A (ko) | Cmp용 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
B601 | Maintenance of original decision after re-examination before a trial | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20021018 Effective date: 20041022 |
|
S901 | Examination by remand of revocation | ||
GRNO | Decision to grant (after opposition) | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130103 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20131217 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20141223 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20151218 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20161223 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20181220 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20200103 Year of fee payment: 16 |