KR100761649B1 - 연마용 조성물 - Google Patents
연마용 조성물 Download PDFInfo
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- KR100761649B1 KR100761649B1 KR1019990018113A KR19990018113A KR100761649B1 KR 100761649 B1 KR100761649 B1 KR 100761649B1 KR 1019990018113 A KR1019990018113 A KR 1019990018113A KR 19990018113 A KR19990018113 A KR 19990018113A KR 100761649 B1 KR100761649 B1 KR 100761649B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- glycol
- slurry
- polishing composition
- weight
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 68
- 239000000203 mixture Substances 0.000 title claims abstract description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001111 Fine metal Inorganic materials 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims abstract description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 36
- 239000002184 metal Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 3
- 239000000654 additive Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- -1 silica quaternary ammonium salt Chemical class 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000002334 glycols Chemical class 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
금속산화물 | 첨가제 | pH | 연마성능 | ||
연마속도 (Å/min) | μ-스크래치 (개/웨이퍼) | ||||
실시예 1 | 실리카(SiO2) | 디에틸렌글리콜 | 11 | 2,659 | 2 |
실시예 2 | 실리카(SiO2) | 에틸렌글리콜 | 11 | 2,730 | 1 |
실시예 3 | 실리카(SiO2) | 트리에틸렌글리콜 | 11 | 2,618 | 3 |
실시예 4 | 실리카(Sio2) | 폴리에틸렌글리콜 | 11 | 2,589 | 4 |
실시예 5 | 실리카(SiO2) | 프로필렌글리콜 | 11 | 2,637 | 7 |
실시예 6 | 실리카(SiO2) | 디프로필렌글리콜 | 11 | 2,512 | 2 |
실시예 7 | 실리카(SiO2) | 트리프로필렌글리콜 | 11 | 2,533 | 6 |
실시예 8 | 실리카(SiO2) | 폴리프로필렌글리콜 | 11 | 2,360 | 3 |
실시예 9 | 알루미나(Al2O3) | 디에틸렌글리콜 | 9 | 3,680 | 25 |
실시예 10 | 세리아(CeO2) | 디에틸렌글리콜 | 4 | 4,758 | 16 |
실시예11 | 지르코니아(ZrO2) | 디에틸렌글리콜 | 7 | 4,279 | 18 |
실시예12 | 티타니아(TiO2) | 디에틸렌글리콜 | 10 | 3,731 | 22 |
금속산화물 | 첨가제 | pH | 연마성능 | ||
연마속도 (Å/min) | μ-스크래치 (개/웨이퍼) | ||||
비교예 1 | 실리카(SiO2) | 미첨가 | 11 | 2,660 | 34 |
비교예 2 | 알루미나(Al2O3) | 미첨가 | 9 | 3,847 | 132 |
비교예 3 | 세리아(CeO2) | 미첨가 | 4 | 4,879 | 184 |
비교예 4 | 지르코니아(ZrO2) | 미첨가 | 7 | 4,146 | 298 |
비교예 5 | 티타니아(TiO2) | 미첨가 | 10 | 3,803 | 231 |
Claims (6)
- 탈이온수 48∼99중량%, 금속산화물미분말 0.1∼50중량% 및 글리콜 0.05∼2중량%를 포함하는 연마용 조성물로서,상기 연마용 조성물이 반도체 디바이스의 표면 평탄화용 용도인 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 상기 글리콜이 에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜, 폴리에틸렌글리콜, 프로필렌글리콜, 디프로필렌글리콜, 트리프로필렌글리콜, 폴리프로필렌글리콜로 구성되는 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 연마용 조성물.
- 제 1항에 있어서, 상기 금속산화물이 실리카, 알루미나, 세리아(Ceria), 지르코니아, 티타니아로 구성되는 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 연마용 조성물.
- 제 1항 또는 3항에 있어서, 상기 금속산화물의 평균 입자 크기가 10∼100nm인것을 특징으로 하는 연마용 조성물.
- 삭제
- 제 1항에 있어서, 상기 금속산화물이 실리카(SiO2)인 것을 특징으로 하는 연마용 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990018113A KR100761649B1 (ko) | 1999-05-19 | 1999-05-19 | 연마용 조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990018113A KR100761649B1 (ko) | 1999-05-19 | 1999-05-19 | 연마용 조성물 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070081185A Division KR20070090128A (ko) | 2007-08-13 | 2007-08-13 | 연마용 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000074300A KR20000074300A (ko) | 2000-12-15 |
KR100761649B1 true KR100761649B1 (ko) | 2007-09-27 |
Family
ID=19586613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990018113A KR100761649B1 (ko) | 1999-05-19 | 1999-05-19 | 연마용 조성물 |
Country Status (1)
Country | Link |
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KR (1) | KR100761649B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100466422B1 (ko) * | 2000-04-18 | 2005-01-13 | 제일모직주식회사 | Cmp용 조성물 |
KR100367830B1 (ko) * | 2000-12-18 | 2003-01-10 | 제일모직주식회사 | Cmp용 조성물 |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
KR100449610B1 (ko) * | 2001-11-27 | 2004-09-21 | 제일모직주식회사 | 절연층 연마용 슬러리 조성물 |
KR20030050026A (ko) * | 2001-12-18 | 2003-06-25 | 백운규 | 화학기계적 연마용 슬러리, 이들 슬러리의 제조방법 및이들 슬러리를 이용한 화학기계적 연마방법 |
KR100479416B1 (ko) * | 2002-05-29 | 2005-03-30 | 테크노세미켐 주식회사 | 화학기계적 연마용 슬러리의 제조방법 |
US6979252B1 (en) | 2004-08-10 | 2005-12-27 | Dupont Air Products Nanomaterials Llc | Low defectivity product slurry for CMP and associated production method |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930657A (ja) * | 1982-08-06 | 1984-02-18 | Tokyo Contact Lens Kenkyusho:Kk | ポリエ−テルスルホンまたはポリスルホンから成るレンズの研摩方法 |
JPS63212463A (ja) * | 1987-02-28 | 1988-09-05 | Takayuki Nakajima | 自動車のフロントガラス修正用研磨液 |
JPH06122868A (ja) * | 1992-08-11 | 1994-05-06 | Toshikazu Tabata | 洗浄の容易な固形バフ研磨剤の製造方法 |
JPH0711239A (ja) * | 1993-06-25 | 1995-01-13 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH1180706A (ja) * | 1997-09-16 | 1999-03-26 | Suncall Corp | 変速機用摩擦材およびその製造方法 |
JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
-
1999
- 1999-05-19 KR KR1019990018113A patent/KR100761649B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930657A (ja) * | 1982-08-06 | 1984-02-18 | Tokyo Contact Lens Kenkyusho:Kk | ポリエ−テルスルホンまたはポリスルホンから成るレンズの研摩方法 |
JPS63212463A (ja) * | 1987-02-28 | 1988-09-05 | Takayuki Nakajima | 自動車のフロントガラス修正用研磨液 |
JPH06122868A (ja) * | 1992-08-11 | 1994-05-06 | Toshikazu Tabata | 洗浄の容易な固形バフ研磨剤の製造方法 |
JPH0711239A (ja) * | 1993-06-25 | 1995-01-13 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH1180706A (ja) * | 1997-09-16 | 1999-03-26 | Suncall Corp | 変速機用摩擦材およびその製造方法 |
Also Published As
Publication number | Publication date |
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KR20000074300A (ko) | 2000-12-15 |
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