KR100455652B1 - 포지티브형 포토레지스트 막의 제조방법 - Google Patents
포지티브형 포토레지스트 막의 제조방법 Download PDFInfo
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- KR100455652B1 KR100455652B1 KR10-1999-0037690A KR19990037690A KR100455652B1 KR 100455652 B1 KR100455652 B1 KR 100455652B1 KR 19990037690 A KR19990037690 A KR 19990037690A KR 100455652 B1 KR100455652 B1 KR 100455652B1
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- butyrolactone
- photoresist
- film
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 96
- 239000000203 mixture Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 26
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims abstract description 31
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 claims abstract description 30
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000012046 mixed solvent Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920003986 novolac Polymers 0.000 claims abstract description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 230000000704 physical effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 67
- 239000002904 solvent Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 235000019645 odor Nutrition 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- -1 organic acid cyclic anhydrides Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002952 polymeric resin Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229930188620 butyrolactone Natural products 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- VSQJUWRUCMFZJC-UHFFFAOYSA-N C=C.C(C)(=O)OC(COCC)C Chemical group C=C.C(C)(=O)OC(COCC)C VSQJUWRUCMFZJC-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ALVGSDOIXRPZFH-UHFFFAOYSA-N [(1-diazonioimino-3,4-dioxonaphthalen-2-ylidene)hydrazinylidene]azanide Chemical compound C1=CC=C2C(=N[N+]#N)C(=NN=[N-])C(=O)C(=O)C2=C1 ALVGSDOIXRPZFH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (13)
- a) 기판 상에 형성된 절연막 또는 도전성 금속막에고분자 노볼락 수지 10 내지 25 중량%, 디아지드계 감광성 화합물 4 내지 10 중량%, 및 3-메톡시부틸아세테이트 및 4-부티로락톤의 혼합용매 또는 3-메톡시부틸아세테이트, 2-헵탄온 및 4-부티로락톤의 혼합용매 65 내지 85 중량%를 포함하는 포지티브형 포토레지스트 조성물을 적하하고,상기 기판이 정지상태에서 1250 내지 1350rpm의 속도로 회전하도록 4.2초 내지 4.8초 동안 가속하여 포토레지스트 조성물을 코팅하는 공정;b) 상기 코팅된 조성물을 건조시키는 공정;c) 건조된 조성물을 노광하는 공정; 및d) 알카리 현상액으로 노광 부위의 조성물을 제거하는 공정을 포함하는 포지티브형 포토레지스트 막의 제조방법.
- (삭제)
- 제1항에 있어서, 상기 3-메톡시부틸아세테이트과 4-부티로락톤은 60 내지 80중량부: 2 내지 10중량부의 비율로 혼합되어 있는 것을 특징으로 하는 포지티브형 포토레지스트 막의 제조방법.
- (삭제)
- 제1항에 있어서, 상기 3-메톡시부틸아세테이트, 2-헵탄온과 4-부티로락톤은 50 내지 70중량부: 5 내지 15중량부 : 2 내지 10중량부의 비율로 혼합되어 있는 것을 특징으로 하는 포지티브형 포토레지스트 막의 제조방법.
- (삭제)
- (삭제)
- a) 고분자 노볼락 수지 10 내지 25 중량%,b) 디아지드계 감광성 화합물 4 내지 10 중량%, 및c) 3-메톡시부틸아세테이트 및 4-부티로락톤의 혼합용매 또는 3-메톡시부틸아세테이트, 2-헵탄온 및 4-부티로락톤의 혼합용매 65 내지 85 중량%를 포함하는 포지티브형 포토레지스트 조성물.
- 제8항에 있어서, 상기 3-메톡시부틸아세테이트 및 4-부티로락톤은 60 내지 80 중량부: 2 내지 10 중량부의 비율로 혼합되어 있는 것을 특징으로 하는 포지티브형 포토레지스트 조성물.
- 제8항에 있어서, 상기 3-메톡시부틸아세테이트, 2-헵탄온, 및 4-부티로락톤은 50 내지 70 중량부: 5 내지 15 중량부 : 2 내지 10 중량부의 비율로 혼합되어 있는 것을 특징으로 하는 포지티브형 포토레지스트 조성물.
- a) 고분자 노볼락 수지 10 내지 25 중량%, 디아지드계 감광성 화합물 4 내지 10 중량%, 및 3-메톡시부틸아세테이트 및 4-부티로락톤의 혼합용매 또는 3-메톡시부틸아세테이트, 2-헵탄온 및 4-부티로락톤의 혼합용매 65 내지 85 중량%를 포함하는 포지티브형 포토레지스트 조성물을 기판 상에 형성된 절연막 또는 도전성 금속막에 적하하고 코팅하는 공정;b) 상기 코팅된 조성물을 건조시키는 공정;c) 건조된 조성물을 노광하는 공정; 및d) 알카리 현상액으로 노광 부위의 조성물을 제거하는 공정을 포함하는 포지티브형 포토레지스트 막의 제조방법.
- 제11항에 있어서, 상기 코팅은 기판이 정지상태에서 1250 내지 1350rpm의 속도로 회전하도록 4.2초 내지 4.8초 동안 가속하여 실시되는 포지티브형 포토레지스트 막의 제조방법.
- 제11항 기재의 방법으로 제조된 포지티브형 포토레지스트 막.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0037690A KR100455652B1 (ko) | 1999-09-06 | 1999-09-06 | 포지티브형 포토레지스트 막의 제조방법 |
TW089111856A TWI253541B (en) | 1999-09-06 | 2000-06-16 | Method of preparing positive photoresist layer |
JP2000260443A JP4309033B2 (ja) | 1999-09-06 | 2000-08-30 | ポジティブ型フォトレジスト膜の製造方法 |
US09/654,927 US6338930B1 (en) | 1999-09-06 | 2000-09-05 | Positive photoresist layer and a method for using the same |
CNB001268406A CN1184534C (zh) | 1999-09-06 | 2000-09-06 | 正型光致抗蚀剂层及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0037690A KR100455652B1 (ko) | 1999-09-06 | 1999-09-06 | 포지티브형 포토레지스트 막의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010026391A KR20010026391A (ko) | 2001-04-06 |
KR100455652B1 true KR100455652B1 (ko) | 2004-11-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-1999-0037690A KR100455652B1 (ko) | 1999-09-06 | 1999-09-06 | 포지티브형 포토레지스트 막의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6338930B1 (ko) |
JP (1) | JP4309033B2 (ko) |
KR (1) | KR100455652B1 (ko) |
CN (1) | CN1184534C (ko) |
TW (1) | TWI253541B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100299688B1 (ko) * | 1999-08-30 | 2001-09-13 | 한의섭 | 포지티브형 포토레지스트 조성물 |
KR100299689B1 (ko) * | 1999-08-30 | 2001-09-13 | 한의섭 | 포지티브형 포토레지스트 조성물 |
JP4053402B2 (ja) * | 2002-10-23 | 2008-02-27 | 東京応化工業株式会社 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
KR100598290B1 (ko) * | 2004-05-20 | 2006-07-07 | 동부일렉트로닉스 주식회사 | 리소그래피 공정의 감광막 패턴 형성 방법 |
JP2007101715A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | パターン形成方法及びそれに用いるレジスト組成物 |
JP2007279237A (ja) * | 2006-04-04 | 2007-10-25 | Nitto Denko Corp | 光導波路の製法 |
US20220035251A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Methods to fabricate 2d wedge and localized encapsulation for diffractive optics |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980064669A (ko) * | 1996-12-26 | 1998-10-07 | 다에머얀 | 롤러 코팅용 방사선 감응성 조성물 |
KR100207298B1 (ko) * | 1990-12-27 | 1999-07-15 | 마쯔모또 에이찌 | 미세 레지스트 패턴의 형성 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03155554A (ja) | 1989-11-14 | 1991-07-03 | Japan Synthetic Rubber Co Ltd | 放射線感応性樹脂組成物 |
US5332650A (en) | 1991-09-06 | 1994-07-26 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition |
US6228561B1 (en) | 1996-02-01 | 2001-05-08 | Tokyo Electron Limited | Film forming method and film forming apparatus |
JP3388676B2 (ja) | 1996-05-29 | 2003-03-24 | 富士ゼロックス株式会社 | 電子写真感光体の塗布装置及びその塗布方法 |
AU7211498A (en) | 1997-04-09 | 1998-10-30 | Ciba Specialty Chemicals Holding Inc. | Black-pigmented structured high molecular weight material |
US6207231B1 (en) | 1997-05-07 | 2001-03-27 | Tokyo Electron Limited | Coating film forming method and coating apparatus |
SG71808A1 (en) | 1997-07-04 | 2000-04-18 | Tokyo Electron Ltd | Centrifugal coating apparatus with detachable outer cup |
-
1999
- 1999-09-06 KR KR10-1999-0037690A patent/KR100455652B1/ko active IP Right Grant
-
2000
- 2000-06-16 TW TW089111856A patent/TWI253541B/zh not_active IP Right Cessation
- 2000-08-30 JP JP2000260443A patent/JP4309033B2/ja not_active Expired - Lifetime
- 2000-09-05 US US09/654,927 patent/US6338930B1/en not_active Expired - Lifetime
- 2000-09-06 CN CNB001268406A patent/CN1184534C/zh not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100207298B1 (ko) * | 1990-12-27 | 1999-07-15 | 마쯔모또 에이찌 | 미세 레지스트 패턴의 형성 방법 |
KR19980064669A (ko) * | 1996-12-26 | 1998-10-07 | 다에머얀 | 롤러 코팅용 방사선 감응성 조성물 |
Also Published As
Publication number | Publication date |
---|---|
TWI253541B (en) | 2006-04-21 |
KR20010026391A (ko) | 2001-04-06 |
CN1184534C (zh) | 2005-01-12 |
JP2001104867A (ja) | 2001-04-17 |
CN1297169A (zh) | 2001-05-30 |
US6338930B1 (en) | 2002-01-15 |
JP4309033B2 (ja) | 2009-08-05 |
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