KR100449774B1 - 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 - Google Patents

세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 Download PDF

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Publication number
KR100449774B1
KR100449774B1 KR10-2001-7015256A KR20017015256A KR100449774B1 KR 100449774 B1 KR100449774 B1 KR 100449774B1 KR 20017015256 A KR20017015256 A KR 20017015256A KR 100449774 B1 KR100449774 B1 KR 100449774B1
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South Korea
Prior art keywords
ceramic
film
active species
manufacturing
forming
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KR10-2001-7015256A
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English (en)
Korean (ko)
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KR20020020897A (ko
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나토리에이지
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세이코 엡슨 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR10-2001-7015256A 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 Expired - Fee Related KR100449774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00091603 2000-03-29
JP2000091603A JP3664033B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置

Publications (2)

Publication Number Publication Date
KR20020020897A KR20020020897A (ko) 2002-03-16
KR100449774B1 true KR100449774B1 (ko) 2004-09-22

Family

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Family Applications (1)

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KR10-2001-7015256A Expired - Fee Related KR100449774B1 (ko) 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자

Country Status (6)

Country Link
US (1) US20020031846A1 (enExample)
EP (1) EP1205575A4 (enExample)
JP (1) JP3664033B2 (enExample)
KR (1) KR100449774B1 (enExample)
CN (1) CN1302151C (enExample)
WO (1) WO2001073161A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730367B2 (en) * 2002-03-05 2004-05-04 Micron Technology, Inc. Atomic layer deposition method with point of use generated reactive gas species
JP2003298020A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 強誘電体薄膜の形成方法、強誘電体メモリならびに強誘電体メモリの製造方法、および半導体装置ならびに半導体装置の製造方法
JP2003298021A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 強誘電体薄膜の形成方法、強誘電体メモリならびに強誘電体メモリの製造方法、および半導体装置ならびに半導体装置の製造方法
US20060255486A1 (en) * 2005-05-10 2006-11-16 Benson Olester Jr Method of manufacturing composite optical body containing inorganic fibers
JP2011124441A (ja) * 2009-12-11 2011-06-23 Utec:Kk 結晶化膜の製造方法及び結晶化装置
JP5951542B2 (ja) * 2013-03-28 2016-07-13 住友重機械工業株式会社 成膜装置
JP6704133B2 (ja) * 2015-12-24 2020-06-03 株式会社Flosfia ペロブスカイト膜の製造方法
CN114229962B (zh) * 2021-10-08 2022-12-06 同济大学 一种用于水处理的电化学管式陶瓷膜及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175529A (ja) * 1984-09-21 1986-04-17 Toshiba Corp ドライエツチング方法及び装置
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
JPH0680656B2 (ja) * 1987-11-13 1994-10-12 シャープ株式会社 酸化物薄膜の形成方法
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
JPH0353068A (ja) * 1989-07-20 1991-03-07 Matsushita Electric Ind Co Ltd レーザｃｖｄによる膜の描画方法
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5527731A (en) * 1992-11-13 1996-06-18 Hitachi, Ltd. Surface treating method and apparatus therefor
JP3450463B2 (ja) * 1994-10-24 2003-09-22 株式会社日立製作所 半導体装置の製造方法
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法

Also Published As

Publication number Publication date
CN1302151C (zh) 2007-02-28
WO2001073161A1 (en) 2001-10-04
CN1365400A (zh) 2002-08-21
JP3664033B2 (ja) 2005-06-22
US20020031846A1 (en) 2002-03-14
JP2001279443A (ja) 2001-10-10
EP1205575A4 (en) 2003-04-16
KR20020020897A (ko) 2002-03-16
EP1205575A1 (en) 2002-05-15

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