JP3664033B2 - セラミックスの製造方法およびその製造装置 - Google Patents

セラミックスの製造方法およびその製造装置 Download PDF

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Publication number
JP3664033B2
JP3664033B2 JP2000091603A JP2000091603A JP3664033B2 JP 3664033 B2 JP3664033 B2 JP 3664033B2 JP 2000091603 A JP2000091603 A JP 2000091603A JP 2000091603 A JP2000091603 A JP 2000091603A JP 3664033 B2 JP3664033 B2 JP 3664033B2
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Japan
Prior art keywords
ceramic
film
ceramics
active species
ceramic film
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Expired - Fee Related
Application number
JP2000091603A
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English (en)
Japanese (ja)
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JP2001279443A (ja
JP2001279443A5 (enExample
Inventor
栄治 名取
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000091603A priority Critical patent/JP3664033B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to PCT/JP2001/002631 priority patent/WO2001073161A1/ja
Priority to KR10-2001-7015256A priority patent/KR100449774B1/ko
Priority to CNB018007066A priority patent/CN1302151C/zh
Priority to US09/819,687 priority patent/US20020031846A1/en
Priority to EP01917596A priority patent/EP1205575A4/en
Publication of JP2001279443A publication Critical patent/JP2001279443A/ja
Publication of JP2001279443A5 publication Critical patent/JP2001279443A5/ja
Application granted granted Critical
Publication of JP3664033B2 publication Critical patent/JP3664033B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2000091603A 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置 Expired - Fee Related JP3664033B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000091603A JP3664033B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置
KR10-2001-7015256A KR100449774B1 (ko) 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자
CNB018007066A CN1302151C (zh) 2000-03-29 2001-03-29 强介电体的制法及其制造装置
US09/819,687 US20020031846A1 (en) 2000-03-29 2001-03-29 Method and device for manufacturing ceramics, semiconductor device and piezoelectric device
PCT/JP2001/002631 WO2001073161A1 (en) 2000-03-29 2001-03-29 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device
EP01917596A EP1205575A4 (en) 2000-03-29 2001-03-29 METHOD AND DEVICE FOR PRODUCING CERAMICS, SEMICONDUCTOR COMPONENTS AND PIEZOELECTRICAL COMPONENTS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000091603A JP3664033B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004211635A Division JP4557144B2 (ja) 2004-07-20 2004-07-20 セラミックスの製造方法

Publications (3)

Publication Number Publication Date
JP2001279443A JP2001279443A (ja) 2001-10-10
JP2001279443A5 JP2001279443A5 (enExample) 2005-02-24
JP3664033B2 true JP3664033B2 (ja) 2005-06-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000091603A Expired - Fee Related JP3664033B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置

Country Status (6)

Country Link
US (1) US20020031846A1 (enExample)
EP (1) EP1205575A4 (enExample)
JP (1) JP3664033B2 (enExample)
KR (1) KR100449774B1 (enExample)
CN (1) CN1302151C (enExample)
WO (1) WO2001073161A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730367B2 (en) * 2002-03-05 2004-05-04 Micron Technology, Inc. Atomic layer deposition method with point of use generated reactive gas species
JP2003298020A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 強誘電体薄膜の形成方法、強誘電体メモリならびに強誘電体メモリの製造方法、および半導体装置ならびに半導体装置の製造方法
JP2003298021A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 強誘電体薄膜の形成方法、強誘電体メモリならびに強誘電体メモリの製造方法、および半導体装置ならびに半導体装置の製造方法
US20060255486A1 (en) * 2005-05-10 2006-11-16 Benson Olester Jr Method of manufacturing composite optical body containing inorganic fibers
JP2011124441A (ja) * 2009-12-11 2011-06-23 Utec:Kk 結晶化膜の製造方法及び結晶化装置
JP5951542B2 (ja) * 2013-03-28 2016-07-13 住友重機械工業株式会社 成膜装置
JP6704133B2 (ja) * 2015-12-24 2020-06-03 株式会社Flosfia ペロブスカイト膜の製造方法
CN114229962B (zh) * 2021-10-08 2022-12-06 同济大学 一种用于水处理的电化学管式陶瓷膜及其制备方法和应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175529A (ja) * 1984-09-21 1986-04-17 Toshiba Corp ドライエツチング方法及び装置
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
JPH0680656B2 (ja) * 1987-11-13 1994-10-12 シャープ株式会社 酸化物薄膜の形成方法
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
JPH0353068A (ja) * 1989-07-20 1991-03-07 Matsushita Electric Ind Co Ltd レーザｃｖｄによる膜の描画方法
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5527731A (en) * 1992-11-13 1996-06-18 Hitachi, Ltd. Surface treating method and apparatus therefor
JP3450463B2 (ja) * 1994-10-24 2003-09-22 株式会社日立製作所 半導体装置の製造方法
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition

Also Published As

Publication number Publication date
KR100449774B1 (ko) 2004-09-22
CN1302151C (zh) 2007-02-28
WO2001073161A1 (en) 2001-10-04
CN1365400A (zh) 2002-08-21
US20020031846A1 (en) 2002-03-14
JP2001279443A (ja) 2001-10-10
EP1205575A4 (en) 2003-04-16
KR20020020897A (ko) 2002-03-16
EP1205575A1 (en) 2002-05-15

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