KR100429750B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100429750B1
KR100429750B1 KR10-2000-0013954A KR20000013954A KR100429750B1 KR 100429750 B1 KR100429750 B1 KR 100429750B1 KR 20000013954 A KR20000013954 A KR 20000013954A KR 100429750 B1 KR100429750 B1 KR 100429750B1
Authority
KR
South Korea
Prior art keywords
insulating film
wiring
film
interlayer insulating
modulus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0013954A
Other languages
English (en)
Korean (ko)
Other versions
KR20000076915A (ko
Inventor
이또사찌요
하스누마마사히꼬
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20000076915A publication Critical patent/KR20000076915A/ko
Application granted granted Critical
Publication of KR100429750B1 publication Critical patent/KR100429750B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2000-0013954A 1999-03-19 2000-03-20 반도체 장치 Expired - Fee Related KR100429750B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07509799A JP4460669B2 (ja) 1999-03-19 1999-03-19 半導体装置
JP1999-075097 1999-03-19

Publications (2)

Publication Number Publication Date
KR20000076915A KR20000076915A (ko) 2000-12-26
KR100429750B1 true KR100429750B1 (ko) 2004-05-03

Family

ID=13566336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0013954A Expired - Fee Related KR100429750B1 (ko) 1999-03-19 2000-03-20 반도체 장치

Country Status (4)

Country Link
US (2) US6414394B1 (https=)
JP (1) JP4460669B2 (https=)
KR (1) KR100429750B1 (https=)
TW (1) TW490710B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP2002299441A (ja) * 2001-03-30 2002-10-11 Jsr Corp デュアルダマシン構造の形成方法
JP4731456B2 (ja) * 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
EP2443653A1 (en) * 2009-06-19 2012-04-25 Imec Crack reduction at metal/organic dielectric interface
TWI414047B (zh) * 2010-03-17 2013-11-01 財團法人工業技術研究院 電子元件封裝結構及其製造方法
KR101906408B1 (ko) 2011-10-04 2018-10-11 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
JP6540650B2 (ja) * 2016-10-19 2019-07-10 株式会社村田製作所 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092675B2 (ja) * 1990-09-28 2000-09-25 東ソー株式会社 オキシナイトライドガラス及びその製造方法
US5689136A (en) * 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
JPH07326671A (ja) 1994-05-31 1995-12-12 Texas Instr Inc <Ti> 半導体装置の製造方法
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US5945203A (en) * 1997-10-14 1999-08-31 Zms Llc Stratified composite dielectric and method of fabrication
US6001747A (en) * 1998-07-22 1999-12-14 Vlsi Technology, Inc. Process to improve adhesion of cap layers in integrated circuits
US6037668A (en) * 1998-11-13 2000-03-14 Motorola, Inc. Integrated circuit having a support structure

Also Published As

Publication number Publication date
JP4460669B2 (ja) 2010-05-12
JP2000269337A (ja) 2000-09-29
US6580171B2 (en) 2003-06-17
KR20000076915A (ko) 2000-12-26
US20020130421A1 (en) 2002-09-19
US6414394B1 (en) 2002-07-02
TW490710B (en) 2002-06-11

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