TW490710B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW490710B
TW490710B TW089104379A TW89104379A TW490710B TW 490710 B TW490710 B TW 490710B TW 089104379 A TW089104379 A TW 089104379A TW 89104379 A TW89104379 A TW 89104379A TW 490710 B TW490710 B TW 490710B
Authority
TW
Taiwan
Prior art keywords
insulating layer
layer
wiring
modulus
young
Prior art date
Application number
TW089104379A
Other languages
English (en)
Chinese (zh)
Inventor
Sachiyo Ito
Masahiko Hasunuma
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW490710B publication Critical patent/TW490710B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW089104379A 1999-03-19 2000-03-10 Semiconductor device TW490710B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07509799A JP4460669B2 (ja) 1999-03-19 1999-03-19 半導体装置

Publications (1)

Publication Number Publication Date
TW490710B true TW490710B (en) 2002-06-11

Family

ID=13566336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089104379A TW490710B (en) 1999-03-19 2000-03-10 Semiconductor device

Country Status (4)

Country Link
US (2) US6414394B1 (https=)
JP (1) JP4460669B2 (https=)
KR (1) KR100429750B1 (https=)
TW (1) TW490710B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968035A (zh) * 2016-10-19 2018-04-27 株式会社村田制作所 半导体装置及其制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP2002299441A (ja) * 2001-03-30 2002-10-11 Jsr Corp デュアルダマシン構造の形成方法
JP4731456B2 (ja) * 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
EP2443653A1 (en) * 2009-06-19 2012-04-25 Imec Crack reduction at metal/organic dielectric interface
TWI414047B (zh) * 2010-03-17 2013-11-01 財團法人工業技術研究院 電子元件封裝結構及其製造方法
KR101906408B1 (ko) 2011-10-04 2018-10-11 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092675B2 (ja) * 1990-09-28 2000-09-25 東ソー株式会社 オキシナイトライドガラス及びその製造方法
US5689136A (en) * 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
JPH07326671A (ja) 1994-05-31 1995-12-12 Texas Instr Inc <Ti> 半導体装置の製造方法
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US5945203A (en) * 1997-10-14 1999-08-31 Zms Llc Stratified composite dielectric and method of fabrication
US6001747A (en) * 1998-07-22 1999-12-14 Vlsi Technology, Inc. Process to improve adhesion of cap layers in integrated circuits
US6037668A (en) * 1998-11-13 2000-03-14 Motorola, Inc. Integrated circuit having a support structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968035A (zh) * 2016-10-19 2018-04-27 株式会社村田制作所 半导体装置及其制造方法

Also Published As

Publication number Publication date
JP4460669B2 (ja) 2010-05-12
JP2000269337A (ja) 2000-09-29
US6580171B2 (en) 2003-06-17
KR20000076915A (ko) 2000-12-26
KR100429750B1 (ko) 2004-05-03
US20020130421A1 (en) 2002-09-19
US6414394B1 (en) 2002-07-02

Similar Documents

Publication Publication Date Title
TW444252B (en) Semiconductor apparatus and its fabricating method
US9735110B2 (en) Semiconductor device and semiconductor device manufacturing method
CN101217136B (zh) 布线结构及其制造方法
TW587274B (en) Semiconductor device and a method for manufacturing thereof
TW535193B (en) Semiconductor apparatus
JP4040363B2 (ja) 半導体装置
TW490710B (en) Semiconductor device
TWI222170B (en) Interconnect structures containing stress adjustment cap layer
TW468247B (en) Damascene wiring structure and semiconductor device with damascene wirings
US9425144B2 (en) Metal fuse structure for improved programming capability
TWI236097B (en) Integrated circuit capacitor structure
TW201041112A (en) Structure and method of forming metal interconnect structures in ultra low-k dielectrics
JP4005958B2 (ja) 半導体装置
US10490513B2 (en) Advanced crack stop structure
TW465039B (en) Void-type metal interconnect and method for making the same
KR101096101B1 (ko) 반도체장치 및 반도체장치를 제조하는 방법
JP4012163B2 (ja) 半導体装置
CN100463163C (zh) 半导体器件
TWI280657B (en) Circuit device
JP2007103546A (ja) 半導体装置およびその製造方法
TWI271802B (en) Semiconductor structures and methods for forming the same
JP2007294586A (ja) 半導体装置
JP4701264B2 (ja) 半導体装置、および半導体装置の製造方法
TWI414020B (zh) 包含阻障金屬及包覆膜之半導體裝置及其製造方法
JP2007294967A (ja) 長寿命の相互接続構造及びその製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees