KR100411845B1 - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR100411845B1 KR100411845B1 KR10-2000-0074521A KR20000074521A KR100411845B1 KR 100411845 B1 KR100411845 B1 KR 100411845B1 KR 20000074521 A KR20000074521 A KR 20000074521A KR 100411845 B1 KR100411845 B1 KR 100411845B1
- Authority
- KR
- South Korea
- Prior art keywords
- potential
- circuit
- region
- semiconductor device
- generation circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Dc-Dc Converters (AREA)
- Logic Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-088772 | 2000-03-28 | ||
| JP2000088772A JP2001274265A (ja) | 2000-03-28 | 2000-03-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010093630A KR20010093630A (ko) | 2001-10-29 |
| KR100411845B1 true KR100411845B1 (ko) | 2003-12-24 |
Family
ID=18604602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2000-0074521A Expired - Fee Related KR100411845B1 (ko) | 2000-03-28 | 2000-12-08 | 반도체 장치 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6341087B1 (https=) |
| JP (1) | JP2001274265A (https=) |
| KR (1) | KR100411845B1 (https=) |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4823408B2 (ja) * | 2000-06-08 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| US6787422B2 (en) * | 2001-01-08 | 2004-09-07 | Chartered Semiconductor Manufacturing Ltd. | Method of body contact for SOI mosfet |
| KR100363555B1 (ko) * | 2001-02-07 | 2002-12-05 | 삼성전자 주식회사 | 에스오아이 트랜지스터의 플로팅 바디효과를 제거하기위한 에스오아이 반도체 집적회로 및 그 제조방법 |
| JP2003110028A (ja) * | 2001-10-01 | 2003-04-11 | Hitachi Ltd | データ処理装置 |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP2003282823A (ja) * | 2002-03-26 | 2003-10-03 | Toshiba Corp | 半導体集積回路 |
| US7180322B1 (en) | 2002-04-16 | 2007-02-20 | Transmeta Corporation | Closed loop feedback control of integrated circuits |
| US6784722B2 (en) * | 2002-10-09 | 2004-08-31 | Intel Corporation | Wide-range local bias generator for body bias grid |
| US7408196B2 (en) * | 2002-12-25 | 2008-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US7949864B1 (en) | 2002-12-31 | 2011-05-24 | Vjekoslav Svilan | Balanced adaptive body bias control |
| US6936898B2 (en) * | 2002-12-31 | 2005-08-30 | Transmeta Corporation | Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions |
| US7205758B1 (en) * | 2004-02-02 | 2007-04-17 | Transmeta Corporation | Systems and methods for adjusting threshold voltage |
| US7236044B2 (en) * | 2003-10-14 | 2007-06-26 | The Board Of Trustees Of The Leland Stanford Junior University | Apparatus and method for adjusting the substrate impedance of a MOS transistor |
| US7649402B1 (en) | 2003-12-23 | 2010-01-19 | Tien-Min Chen | Feedback-controlled body-bias voltage source |
| US6903984B1 (en) * | 2003-12-31 | 2005-06-07 | Intel Corporation | Floating-body DRAM using write word line for increased retention time |
| US7216310B2 (en) * | 2004-01-07 | 2007-05-08 | Texas Instruments Incorporated | Design method and system for optimum performance in integrated circuits that use power management |
| US7859062B1 (en) * | 2004-02-02 | 2010-12-28 | Koniaris Kleanthes G | Systems and methods for integrated circuits comprising multiple body biasing domains |
| US7816742B1 (en) * | 2004-09-30 | 2010-10-19 | Koniaris Kleanthes G | Systems and methods for integrated circuits comprising multiple body biasing domains |
| EP3570374B1 (en) | 2004-06-23 | 2022-04-20 | pSemi Corporation | Integrated rf front end |
| US7509504B1 (en) | 2004-09-30 | 2009-03-24 | Transmeta Corporation | Systems and methods for control of integrated circuits comprising body biasing systems |
| JP4867157B2 (ja) * | 2004-11-18 | 2012-02-01 | ソニー株式会社 | 高周波トランジスタの設計方法、および、マルチフィンガーゲートを有する高周波トランジスタ |
| KR100725112B1 (ko) * | 2005-04-27 | 2007-06-04 | 한국과학기술원 | 백―바이어스를 이용하여 soi 기판에 형성된 플래시 블록을 소거하기 위한 플래시 메모리 소자의 제조 방법, 그 소거 방법 및 그 구조 |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US7313033B2 (en) * | 2005-09-28 | 2007-12-25 | Infineon Technologies Ag | Random access memory including first and second voltage sources |
| US7568115B2 (en) * | 2005-09-28 | 2009-07-28 | Intel Corporation | Power delivery and power management of many-core processors |
| KR100725103B1 (ko) | 2006-05-22 | 2007-06-04 | 삼성전자주식회사 | 정전기 방전회로 및 이를 갖는 반도체 칩의 입력커패시턴스 감소 방법 |
| JP5137378B2 (ja) * | 2006-10-20 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP4237221B2 (ja) * | 2006-11-20 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体装置 |
| US8194451B2 (en) | 2007-11-29 | 2012-06-05 | Zeno Semiconductor, Inc. | Memory cells, memory cell arrays, methods of using and methods of making |
| US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
| US7760548B2 (en) | 2006-11-29 | 2010-07-20 | Yuniarto Widjaja | Semiconductor memory having both volatile and non-volatile functionality and method of operating |
| US8077536B2 (en) | 2008-08-05 | 2011-12-13 | Zeno Semiconductor, Inc. | Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle |
| US8159868B2 (en) | 2008-08-22 | 2012-04-17 | Zeno Semiconductor, Inc. | Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating |
| US8514622B2 (en) | 2007-11-29 | 2013-08-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US9391079B2 (en) | 2007-11-29 | 2016-07-12 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US9601493B2 (en) | 2006-11-29 | 2017-03-21 | Zeno Semiconductor, Inc | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| US9230651B2 (en) | 2012-04-08 | 2016-01-05 | Zeno Semiconductor, Inc. | Memory device having electrically floating body transitor |
| US8059459B2 (en) | 2007-10-24 | 2011-11-15 | Zeno Semiconductor, Inc. | Semiconductor memory having both volatile and non-volatile functionality and method of operating |
| US10403361B2 (en) | 2007-11-29 | 2019-09-03 | Zeno Semiconductor, Inc. | Memory cells, memory cell arrays, methods of using and methods of making |
| US8130547B2 (en) | 2007-11-29 | 2012-03-06 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
| US8014200B2 (en) | 2008-04-08 | 2011-09-06 | Zeno Semiconductor, Inc. | Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating |
| USRE47381E1 (en) | 2008-09-03 | 2019-05-07 | Zeno Semiconductor, Inc. | Forming semiconductor cells with regions of varying conductivity |
| US11908899B2 (en) | 2009-02-20 | 2024-02-20 | Zeno Semiconductor, Inc. | MOSFET and memory cell having improved drain current through back bias application |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US9356144B1 (en) * | 2009-08-11 | 2016-05-31 | Rf Micro Devices, Inc. | Remote gate protection diode for field effect transistors |
| US9153309B2 (en) | 2010-02-07 | 2015-10-06 | Zeno Semiconductor Inc. | Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating |
| US10340276B2 (en) | 2010-03-02 | 2019-07-02 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| US10461084B2 (en) | 2010-03-02 | 2019-10-29 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US9922981B2 (en) | 2010-03-02 | 2018-03-20 | Zeno Semiconductor, Inc. | Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making |
| US8582359B2 (en) | 2010-11-16 | 2013-11-12 | Zeno Semiconductor, Inc. | Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor |
| US8957458B2 (en) | 2011-03-24 | 2015-02-17 | Zeno Semiconductor, Inc. | Asymmetric semiconductor memory device having electrically floating body transistor |
| US8779488B2 (en) | 2011-04-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US9025358B2 (en) | 2011-10-13 | 2015-05-05 | Zeno Semiconductor Inc | Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating |
| CN107331416B (zh) | 2012-02-16 | 2020-11-10 | 芝诺半导体有限公司 | 包括初级和二级电晶体的存储单元 |
| CN104854698A (zh) | 2012-10-31 | 2015-08-19 | 三重富士通半导体有限责任公司 | 具有低变化晶体管外围电路的dram型器件以及相关方法 |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US9208880B2 (en) | 2013-01-14 | 2015-12-08 | Zeno Semiconductor, Inc. | Content addressable memory device having electrically floating body transistor |
| US9029922B2 (en) | 2013-03-09 | 2015-05-12 | Zeno Semiconductor, Inc. | Memory device comprising electrically floating body transistor |
| US20150236798A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Methods for Increasing RF Throughput Via Usage of Tunable Filters |
| US9275723B2 (en) | 2013-04-10 | 2016-03-01 | Zeno Semiconductor, Inc. | Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers |
| US9368625B2 (en) | 2013-05-01 | 2016-06-14 | Zeno Semiconductor, Inc. | NAND string utilizing floating body memory cell |
| US9281022B2 (en) | 2013-07-10 | 2016-03-08 | Zeno Semiconductor, Inc. | Systems and methods for reducing standby power in floating body memory devices |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9548119B2 (en) | 2014-01-15 | 2017-01-17 | Zeno Semiconductor, Inc | Memory device comprising an electrically floating body transistor |
| US9496053B2 (en) | 2014-08-15 | 2016-11-15 | Zeno Semiconductor, Inc. | Memory device comprising electrically floating body transistor |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| CN107592943B (zh) | 2015-04-29 | 2022-07-15 | 芝诺半导体有限公司 | 提高漏极电流的mosfet和存储单元 |
| US10553683B2 (en) | 2015-04-29 | 2020-02-04 | Zeno Semiconductor, Inc. | MOSFET and memory cell having improved drain current through back bias application |
| US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
| US11599185B2 (en) * | 2015-07-22 | 2023-03-07 | Synopsys, Inc. | Internet of things (IoT) power and performance management technique and circuit methodology |
| US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
| US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
| US9672902B1 (en) * | 2016-08-03 | 2017-06-06 | Apple Inc. | Bit-cell voltage control system |
| US10050526B2 (en) | 2016-08-09 | 2018-08-14 | Nxp Usa, Inc. | Switching power converter |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10079301B2 (en) | 2016-11-01 | 2018-09-18 | Zeno Semiconductor, Inc. | Memory device comprising an electrically floating body transistor and methods of using |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10586790B2 (en) * | 2018-03-30 | 2020-03-10 | Arm Limited | Periphery body biasing for memory applications |
| TWI865411B (zh) | 2018-04-18 | 2024-12-01 | 美商季諾半導體股份有限公司 | 包括電性浮體電晶體的記憶裝置 |
| US11600663B2 (en) | 2019-01-11 | 2023-03-07 | Zeno Semiconductor, Inc. | Memory cell and memory array select transistor |
| US12439611B2 (en) | 2019-03-12 | 2025-10-07 | Zeno Semiconductor, Inc. | Memory cell and memory array select transistor |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589352A (ja) * | 1981-07-08 | 1983-01-19 | Seiko Epson Corp | 基板バイアス発生回路 |
| KR940001643B1 (ko) * | 1984-08-31 | 1994-02-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 집적 회로장치 |
| JPH10229166A (ja) * | 1997-02-14 | 1998-08-25 | Nec Corp | 発振回路および遅延回路 |
| KR19990001322A (ko) * | 1997-06-13 | 1999-01-15 | 구자홍 | 진공청소기의 흡음재 설치구조 |
| JPH11145277A (ja) * | 1997-11-12 | 1999-05-28 | Nec Corp | 誘電体分離型半導体装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3184265B2 (ja) * | 1991-10-17 | 2001-07-09 | 株式会社日立製作所 | 半導体集積回路装置およびその制御方法 |
| JP2939086B2 (ja) * | 1992-03-30 | 1999-08-25 | 三菱電機株式会社 | 半導体装置 |
| JP4067582B2 (ja) * | 1993-11-29 | 2008-03-26 | 株式会社ルネサステクノロジ | 半導体回路 |
| JPH08124243A (ja) | 1994-10-24 | 1996-05-17 | Hitachi Ltd | 磁気記録再生装置のタイマー予約方式 |
| US5471421A (en) * | 1994-12-16 | 1995-11-28 | Sun Microsystems, Inc. | Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage |
| US5581500A (en) * | 1994-12-16 | 1996-12-03 | Sun Microsystems, Inc. | Memory cell with power supply induced reversed-bias pass transistors for reducing off-leakage current |
| JPH0936246A (ja) * | 1995-07-18 | 1997-02-07 | Nec Corp | 半導体装置 |
| JP3533306B2 (ja) | 1996-04-02 | 2004-05-31 | 株式会社東芝 | 半導体集積回路装置 |
| JP4023850B2 (ja) * | 1996-05-30 | 2007-12-19 | 株式会社ルネサステクノロジ | 半導体装置 |
| US5774411A (en) | 1996-09-12 | 1998-06-30 | International Business Machines Corporation | Methods to enhance SOI SRAM cell stability |
| JP3597961B2 (ja) * | 1996-12-27 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JPH10189884A (ja) * | 1998-01-14 | 1998-07-21 | Hitachi Ltd | 低消費電力型半導体集積回路 |
| JP3383219B2 (ja) | 1998-05-22 | 2003-03-04 | シャープ株式会社 | Soi半導体装置及びその製造方法 |
-
2000
- 2000-03-28 JP JP2000088772A patent/JP2001274265A/ja active Pending
- 2000-09-25 US US09/668,360 patent/US6341087B1/en not_active Expired - Fee Related
- 2000-12-08 KR KR10-2000-0074521A patent/KR100411845B1/ko not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589352A (ja) * | 1981-07-08 | 1983-01-19 | Seiko Epson Corp | 基板バイアス発生回路 |
| KR940001643B1 (ko) * | 1984-08-31 | 1994-02-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 집적 회로장치 |
| JPH10229166A (ja) * | 1997-02-14 | 1998-08-25 | Nec Corp | 発振回路および遅延回路 |
| KR19990001322A (ko) * | 1997-06-13 | 1999-01-15 | 구자홍 | 진공청소기의 흡음재 설치구조 |
| JPH11145277A (ja) * | 1997-11-12 | 1999-05-28 | Nec Corp | 誘電体分離型半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001274265A (ja) | 2001-10-05 |
| KR20010093630A (ko) | 2001-10-29 |
| US6341087B1 (en) | 2002-01-22 |
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