KR100379208B1 - 개량된바이폴라트랜지스터및그제조방법 - Google Patents

개량된바이폴라트랜지스터및그제조방법 Download PDF

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Publication number
KR100379208B1
KR100379208B1 KR1019950024226A KR19950024226A KR100379208B1 KR 100379208 B1 KR100379208 B1 KR 100379208B1 KR 1019950024226 A KR1019950024226 A KR 1019950024226A KR 19950024226 A KR19950024226 A KR 19950024226A KR 100379208 B1 KR100379208 B1 KR 100379208B1
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KR
South Korea
Prior art keywords
layer
base
collector
etch
over
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Expired - Fee Related
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KR1019950024226A
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English (en)
Korean (ko)
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KR960009213A (ko
Inventor
티모씨에스.헨더슨
다렐지.힐
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR960009213A publication Critical patent/KR960009213A/ko
Application granted granted Critical
Publication of KR100379208B1 publication Critical patent/KR100379208B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
KR1019950024226A 1994-08-09 1995-08-05 개량된바이폴라트랜지스터및그제조방법 Expired - Fee Related KR100379208B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/287,741 1994-08-09
US08/287,741 US5445976A (en) 1994-08-09 1994-08-09 Method for producing bipolar transistor having reduced base-collector capacitance

Publications (2)

Publication Number Publication Date
KR960009213A KR960009213A (ko) 1996-03-22
KR100379208B1 true KR100379208B1 (ko) 2003-07-18

Family

ID=23104139

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950024226A Expired - Fee Related KR100379208B1 (ko) 1994-08-09 1995-08-05 개량된바이폴라트랜지스터및그제조방법

Country Status (6)

Country Link
US (1) US5445976A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0703607B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0864610A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100379208B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69524516T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW275134B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5702958A (en) * 1994-08-09 1997-12-30 Texas Instruments Incorporated Method for the fabrication of bipolar transistors
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5625206A (en) * 1996-06-03 1997-04-29 Lucent Technologies Inc. High-speed double-heterostructure bipolar transistor devices
US5859447A (en) * 1997-05-09 1999-01-12 Yang; Edward S. Heterojunction bipolar transistor having heterostructure ballasting emitter
US6060402A (en) * 1998-07-23 2000-05-09 The Whitaker Corporation Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer
DE19834491A1 (de) * 1998-07-31 2000-02-03 Daimler Chrysler Ag Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors
JP3509682B2 (ja) * 2000-01-31 2004-03-22 シャープ株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法、並びに、通信装置
US6744078B2 (en) * 2001-07-04 2004-06-01 Sumitomo Chemical Company, Limited Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers
JP3507828B2 (ja) 2001-09-11 2004-03-15 シャープ株式会社 ヘテロ接合バイポーラトランジスタ及びその製造方法
JP2004327904A (ja) * 2003-04-28 2004-11-18 Renesas Technology Corp バイポーラトランジスタおよびその製造方法
CN102017130A (zh) * 2008-02-28 2011-04-13 Nxp股份有限公司 半导体器件及其制造方法
US9105488B2 (en) 2010-11-04 2015-08-11 Skyworks Solutions, Inc. Devices and methodologies related to structures having HBT and FET
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US9059138B2 (en) 2012-01-25 2015-06-16 International Business Machines Corporation Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
CN103597742A (zh) 2012-06-14 2014-02-19 西凯渥资讯处理科技公司 包含相关系统、装置及方法的功率放大器模块
US11355586B2 (en) * 2020-10-22 2022-06-07 Walter Tony WOHLMUTH Heterojuction bipolar transistor
US11728380B2 (en) 2021-06-24 2023-08-15 Globalfoundries U.S. Inc. Bipolar transistor with base horizontally displaced from collector

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0558100B1 (en) * 1986-04-01 1996-12-04 Matsushita Electric Industrial Co., Ltd. Bipolar transistor
JPH01238161A (ja) * 1988-03-18 1989-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JP2574862B2 (ja) * 1988-04-15 1997-01-22 富士通株式会社 ホットエレクトロントランジスタ及びその製造方法
CA1318418C (en) * 1988-09-28 1993-05-25 Richard Norman Nottenburg Heterostructure bipolar transistor
JPH02159036A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd バイポーラトランジスタの製造方法
JPH02235341A (ja) * 1989-03-08 1990-09-18 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
JP2808145B2 (ja) * 1989-08-24 1998-10-08 富士通株式会社 半導体装置
JPH03108339A (ja) * 1989-09-22 1991-05-08 Hitachi Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
JPH03291942A (ja) * 1990-04-09 1991-12-24 Fujitsu Ltd ヘテロ接合半導体装置の製造方法
JPH0414831A (ja) * 1990-05-08 1992-01-20 Sony Corp 配線形成方法
US5118382A (en) * 1990-08-10 1992-06-02 Ibm Corporation Elimination of etch stop undercut
EP0478923B1 (en) * 1990-08-31 1997-11-05 Texas Instruments Incorporated Method of fabricating self-aligned heterojunction bipolar transistors
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors

Also Published As

Publication number Publication date
EP0703607B1 (en) 2001-12-12
TW275134B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-05-01
DE69524516T2 (de) 2002-07-04
US5445976A (en) 1995-08-29
EP0703607A2 (en) 1996-03-27
EP0703607A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-04-24
KR960009213A (ko) 1996-03-22
JPH0864610A (ja) 1996-03-08
DE69524516D1 (de) 2002-01-24

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