KR100351189B1 - 비트 라인들, 워드 라인들 및 플레이트 라인들을 구비하는집적 메모리 및 메모리 동작 방법 - Google Patents
비트 라인들, 워드 라인들 및 플레이트 라인들을 구비하는집적 메모리 및 메모리 동작 방법 Download PDFInfo
- Publication number
- KR100351189B1 KR100351189B1 KR1020000022869A KR20000022869A KR100351189B1 KR 100351189 B1 KR100351189 B1 KR 100351189B1 KR 1020000022869 A KR1020000022869 A KR 1020000022869A KR 20000022869 A KR20000022869 A KR 20000022869A KR 100351189 B1 KR100351189 B1 KR 100351189B1
- Authority
- KR
- South Korea
- Prior art keywords
- potential
- plate
- lines
- memory
- word
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2255—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2257—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2297—Power supply circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19919360A DE19919360C2 (de) | 1999-04-28 | 1999-04-28 | Integrierter Speicher mit Bitleitungen, Wortleitungen und Plattenleitungen sowie Betriebsverfahren für einen entsprechenden Speicher |
DE19919360.6 | 1999-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010020796A KR20010020796A (ko) | 2001-03-15 |
KR100351189B1 true KR100351189B1 (ko) | 2002-08-30 |
Family
ID=7906193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000022869A KR100351189B1 (ko) | 1999-04-28 | 2000-04-28 | 비트 라인들, 워드 라인들 및 플레이트 라인들을 구비하는집적 메모리 및 메모리 동작 방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3568876B2 (ja) |
KR (1) | KR100351189B1 (ja) |
CN (1) | CN1171235C (ja) |
DE (1) | DE19919360C2 (ja) |
TW (1) | TW594733B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10056830C2 (de) * | 2000-11-16 | 2002-10-24 | Infineon Technologies Ag | Integrierte magnetoresistive Halbleiterspeicheranordnung |
JP4007823B2 (ja) * | 2002-02-21 | 2007-11-14 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US6920059B2 (en) * | 2002-11-29 | 2005-07-19 | Infineon Technologies Aktiengesellschaft | Reducing effects of noise coupling in integrated circuits with memory arrays |
JP4999287B2 (ja) * | 2005-06-13 | 2012-08-15 | ルネサスエレクトロニクス株式会社 | スタティック型半導体記憶装置 |
US8928113B2 (en) * | 2011-04-08 | 2015-01-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout scheme and method for forming device cells in semiconductor devices |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2903824B2 (ja) * | 1992-01-13 | 1999-06-14 | 日本電気株式会社 | 半導体記憶回路 |
JPH05314763A (ja) * | 1992-05-12 | 1993-11-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0729398A (ja) * | 1993-07-14 | 1995-01-31 | Seiko Epson Corp | 半導体記憶装置 |
JP3441154B2 (ja) * | 1994-04-20 | 2003-08-25 | 株式会社東芝 | 半導体記憶装置 |
JP3397452B2 (ja) * | 1994-07-06 | 2003-04-14 | 東芝マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
JPH08138390A (ja) * | 1994-11-08 | 1996-05-31 | Hitachi Ltd | 半導体記憶装置 |
JPH09162365A (ja) * | 1995-12-07 | 1997-06-20 | Kawasaki Steel Corp | ダイナミックランダムアクセスメモリ |
WO1997023876A1 (fr) * | 1995-12-25 | 1997-07-03 | Hitachi, Ltd. | Dispositif a memoire remanente |
KR100224673B1 (ko) * | 1996-12-13 | 1999-10-15 | 윤종용 | 불휘발성 강유전체 메모리장치 및 그의 구동방법 |
-
1999
- 1999-04-28 DE DE19919360A patent/DE19919360C2/de not_active Expired - Fee Related
-
2000
- 2000-04-25 TW TW089107750A patent/TW594733B/zh not_active IP Right Cessation
- 2000-04-26 JP JP2000126387A patent/JP3568876B2/ja not_active Expired - Fee Related
- 2000-04-28 CN CNB001070827A patent/CN1171235C/zh not_active Expired - Fee Related
- 2000-04-28 KR KR1020000022869A patent/KR100351189B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3568876B2 (ja) | 2004-09-22 |
CN1171235C (zh) | 2004-10-13 |
TW594733B (en) | 2004-06-21 |
DE19919360A1 (de) | 2000-11-02 |
DE19919360C2 (de) | 2001-09-20 |
CN1271942A (zh) | 2000-11-01 |
JP2000353398A (ja) | 2000-12-19 |
KR20010020796A (ko) | 2001-03-15 |
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A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080728 Year of fee payment: 7 |
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LAPS | Lapse due to unpaid annual fee |