CN1171235C - 带有位线、字线和板线的集成存储器及其工作方法 - Google Patents

带有位线、字线和板线的集成存储器及其工作方法 Download PDF

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Publication number
CN1171235C
CN1171235C CNB001070827A CN00107082A CN1171235C CN 1171235 C CN1171235 C CN 1171235C CN B001070827 A CNB001070827 A CN B001070827A CN 00107082 A CN00107082 A CN 00107082A CN 1171235 C CN1171235 C CN 1171235C
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CN
China
Prior art keywords
current potential
word line
storage unit
under
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB001070827A
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English (en)
Chinese (zh)
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CN1271942A (zh
Inventor
H・赫尼格施米德
H·赫尼格施米德
投
G·布劳恩
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN1271942A publication Critical patent/CN1271942A/zh
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Publication of CN1171235C publication Critical patent/CN1171235C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2255—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2297—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CNB001070827A 1999-04-28 2000-04-28 带有位线、字线和板线的集成存储器及其工作方法 Expired - Fee Related CN1171235C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19919360A DE19919360C2 (de) 1999-04-28 1999-04-28 Integrierter Speicher mit Bitleitungen, Wortleitungen und Plattenleitungen sowie Betriebsverfahren für einen entsprechenden Speicher
DE19919360.6 1999-04-28

Publications (2)

Publication Number Publication Date
CN1271942A CN1271942A (zh) 2000-11-01
CN1171235C true CN1171235C (zh) 2004-10-13

Family

ID=7906193

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB001070827A Expired - Fee Related CN1171235C (zh) 1999-04-28 2000-04-28 带有位线、字线和板线的集成存储器及其工作方法

Country Status (5)

Country Link
JP (1) JP3568876B2 (ja)
KR (1) KR100351189B1 (ja)
CN (1) CN1171235C (ja)
DE (1) DE19919360C2 (ja)
TW (1) TW594733B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10056830C2 (de) * 2000-11-16 2002-10-24 Infineon Technologies Ag Integrierte magnetoresistive Halbleiterspeicheranordnung
JP4007823B2 (ja) * 2002-02-21 2007-11-14 株式会社ルネサステクノロジ 半導体記憶装置
US6920059B2 (en) * 2002-11-29 2005-07-19 Infineon Technologies Aktiengesellschaft Reducing effects of noise coupling in integrated circuits with memory arrays
JP4999287B2 (ja) * 2005-06-13 2012-08-15 ルネサスエレクトロニクス株式会社 スタティック型半導体記憶装置
US8928113B2 (en) * 2011-04-08 2015-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layout scheme and method for forming device cells in semiconductor devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903824B2 (ja) * 1992-01-13 1999-06-14 日本電気株式会社 半導体記憶回路
JPH05314763A (ja) * 1992-05-12 1993-11-26 Mitsubishi Electric Corp 半導体記憶装置
JPH0729398A (ja) * 1993-07-14 1995-01-31 Seiko Epson Corp 半導体記憶装置
JP3441154B2 (ja) * 1994-04-20 2003-08-25 株式会社東芝 半導体記憶装置
JP3397452B2 (ja) * 1994-07-06 2003-04-14 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JPH08138390A (ja) * 1994-11-08 1996-05-31 Hitachi Ltd 半導体記憶装置
JPH09162365A (ja) * 1995-12-07 1997-06-20 Kawasaki Steel Corp ダイナミックランダムアクセスメモリ
WO1997023876A1 (fr) * 1995-12-25 1997-07-03 Hitachi, Ltd. Dispositif a memoire remanente
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법

Also Published As

Publication number Publication date
JP3568876B2 (ja) 2004-09-22
TW594733B (en) 2004-06-21
KR100351189B1 (ko) 2002-08-30
DE19919360A1 (de) 2000-11-02
DE19919360C2 (de) 2001-09-20
CN1271942A (zh) 2000-11-01
JP2000353398A (ja) 2000-12-19
KR20010020796A (ko) 2001-03-15

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041013