KR100348233B1 - 반도체장치의제조방법 - Google Patents

반도체장치의제조방법 Download PDF

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Publication number
KR100348233B1
KR100348233B1 KR1019950012817A KR19950012817A KR100348233B1 KR 100348233 B1 KR100348233 B1 KR 100348233B1 KR 1019950012817 A KR1019950012817 A KR 1019950012817A KR 19950012817 A KR19950012817 A KR 19950012817A KR 100348233 B1 KR100348233 B1 KR 100348233B1
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South Korea
Prior art keywords
semiconductor
layer
slice
conductive
insulating layer
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Expired - Lifetime
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KR1019950012817A
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English (en)
Korean (ko)
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KR950034534A (ko
Inventor
로날드데커
헨리쿠스고데프리더스라파엘마스
빌헬르무스테오도러스안토니우스요하네스반덴아인덴
Original Assignee
코닌클리케 필립스 일렉트로닉스 엔.브이.
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Publication of KR950034534A publication Critical patent/KR950034534A/ko
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Publication of KR100348233B1 publication Critical patent/KR100348233B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10P72/74—
    • H10W20/20—
    • H10W72/019—
    • H10W72/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H10P72/7426—
    • H10P72/743—
    • H10P72/7432—
    • H10W72/536—
    • H10W72/59—
    • H10W72/951—
    • H10W72/952—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Weting (AREA)
KR1019950012817A 1994-05-24 1995-05-23 반도체장치의제조방법 Expired - Lifetime KR100348233B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BE941527 1994-05-24
BE9400527A BE1008384A3 (nl) 1994-05-24 1994-05-24 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen met halfgeleiderelementen gevormd in een op een dragerplak aangebrachte laag halfgeleidermateriaal.
BE09400527 1994-05-24

Publications (2)

Publication Number Publication Date
KR950034534A KR950034534A (ko) 1995-12-28
KR100348233B1 true KR100348233B1 (ko) 2002-11-02

Family

ID=3888174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012817A Expired - Lifetime KR100348233B1 (ko) 1994-05-24 1995-05-23 반도체장치의제조방법

Country Status (8)

Country Link
US (1) US5504036A (enExample)
EP (1) EP0684643B1 (enExample)
JP (1) JP2987081B2 (enExample)
KR (1) KR100348233B1 (enExample)
CN (1) CN1061783C (enExample)
BE (1) BE1008384A3 (enExample)
DE (1) DE69505048T2 (enExample)
TW (1) TW288193B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
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US6204074B1 (en) * 1995-01-09 2001-03-20 International Business Machines Corporation Chip design process for wire bond and flip-chip package
DE69622339T2 (de) * 1995-05-10 2003-03-06 Koninklijke Philips Electronics N.V., Eindhoven Verfahren zum herstellen einer einrichtung, bei der ein substrat mit halbleiterelement und leiterbahnen auf ein trägersubstrat mit metallisierung aufgeklebt wird
EP0888701B1 (en) * 1996-01-31 2007-10-03 Cochlear Limited Thin film fabrication technique for implantable electrodes
US5698474A (en) * 1996-02-26 1997-12-16 Hypervision, Inc. High speed diamond-based machining of silicon semiconductor die in wafer and packaged form for backside emission microscope detection
JP2839007B2 (ja) * 1996-04-18 1998-12-16 日本電気株式会社 半導体装置及びその製造方法
US5965933A (en) * 1996-05-28 1999-10-12 Young; William R. Semiconductor packaging apparatus
EP1503406A3 (en) * 1996-10-29 2009-07-08 Tru-Si Technologies, Inc. Back-side contact pads of a semiconductor chip
JP3537447B2 (ja) * 1996-10-29 2004-06-14 トル‐シ・テクノロジーズ・インコーポレイテッド 集積回路及びその製造方法
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
US5897371A (en) * 1996-12-19 1999-04-27 Cypress Semiconductor Corp. Alignment process compatible with chemical mechanical polishing
EP1148546A1 (de) 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zur Justierung von Strukturen auf einem Halbleiter-substrat
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
JP3788268B2 (ja) * 2001-05-14 2006-06-21 ソニー株式会社 半導体装置の製造方法
TW487958B (en) * 2001-06-07 2002-05-21 Ind Tech Res Inst Manufacturing method of thin film transistor panel
US7831151B2 (en) 2001-06-29 2010-11-09 John Trezza Redundant optical device array
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6787916B2 (en) 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
JP4110390B2 (ja) * 2002-03-19 2008-07-02 セイコーエプソン株式会社 半導体装置の製造方法
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2005150686A (ja) * 2003-10-22 2005-06-09 Sharp Corp 半導体装置およびその製造方法
JP2008509445A (ja) * 2004-08-09 2008-03-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 所定量を有する少なくとも２種類の流体及び／又は気体を一緒にする方法
EP1800344A2 (en) * 2004-10-05 2007-06-27 Koninklijke Philips Electronics N.V. Semiconductor device and use thereof
EP1900018A2 (en) * 2005-06-29 2008-03-19 Koninklijke Philips Electronics N.V. Method of manufacturing an assembly and assembly
JP2008078486A (ja) * 2006-09-22 2008-04-03 Oki Electric Ind Co Ltd 半導体素子
GB2492532B (en) * 2011-06-27 2015-06-03 Pragmatic Printing Ltd Transistor and its method of manufacture
GB2492442B (en) * 2011-06-27 2015-11-04 Pragmatic Printing Ltd Transistor and its method of manufacture
US9728498B2 (en) * 2015-06-30 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure

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US4532003A (en) * 1982-08-09 1985-07-30 Harris Corporation Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
US4596069A (en) * 1984-07-13 1986-06-24 Texas Instruments Incorporated Three dimensional processing for monolithic IMPATTs
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US5081061A (en) * 1990-02-23 1992-01-14 Harris Corporation Manufacturing ultra-thin dielectrically isolated wafers
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5091330A (en) * 1990-12-28 1992-02-25 Motorola, Inc. Method of fabricating a dielectric isolated area

Also Published As

Publication number Publication date
JP2987081B2 (ja) 1999-12-06
KR950034534A (ko) 1995-12-28
CN1115118A (zh) 1996-01-17
TW288193B (enExample) 1996-10-11
JPH07321298A (ja) 1995-12-08
EP0684643B1 (en) 1998-09-30
CN1061783C (zh) 2001-02-07
DE69505048T2 (de) 1999-05-12
DE69505048D1 (de) 1998-11-05
EP0684643A1 (en) 1995-11-29
US5504036A (en) 1996-04-02
BE1008384A3 (nl) 1996-04-02

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