KR100345583B1 - 3내지5족원소들로이루어진화합물반도체결정의열분해기상성장방법 - Google Patents

3내지5족원소들로이루어진화합물반도체결정의열분해기상성장방법 Download PDF

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Publication number
KR100345583B1
KR100345583B1 KR1019950000061A KR19950000061A KR100345583B1 KR 100345583 B1 KR100345583 B1 KR 100345583B1 KR 1019950000061 A KR1019950000061 A KR 1019950000061A KR 19950000061 A KR19950000061 A KR 19950000061A KR 100345583 B1 KR100345583 B1 KR 100345583B1
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South Korea
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compound semiconductor
semiconductor crystal
group
compound
elements
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Korean (ko)
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KR950034502A (ko
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마쓰다요시노부
하타마사히코
후쿠하라노보루
이시하라도시오
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스미또모 가가꾸 고교 가부시끼가이샤
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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019950000061A 1994-01-07 1995-01-05 3내지5족원소들로이루어진화합물반도체결정의열분해기상성장방법 Expired - Fee Related KR100345583B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP94-000461 1994-01-07
JP94-461 1994-01-07
JP00046194A JP3395318B2 (ja) 1994-01-07 1994-01-07 ３−５族化合物半導体結晶の成長方法

Publications (2)

Publication Number Publication Date
KR950034502A KR950034502A (ko) 1995-12-28
KR100345583B1 true KR100345583B1 (ko) 2002-11-23

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KR1019950000061A Expired - Fee Related KR100345583B1 (ko) 1994-01-07 1995-01-05 3내지5족원소들로이루어진화합물반도체결정의열분해기상성장방법

Country Status (8)

Country Link
US (1) US5603764A (enrdf_load_stackoverflow)
EP (1) EP0662532B1 (enrdf_load_stackoverflow)
JP (1) JP3395318B2 (enrdf_load_stackoverflow)
KR (1) KR100345583B1 (enrdf_load_stackoverflow)
CA (1) CA2139551C (enrdf_load_stackoverflow)
DE (1) DE69508801T2 (enrdf_load_stackoverflow)
SG (1) SG43823A1 (enrdf_load_stackoverflow)
TW (1) TW257879B (enrdf_load_stackoverflow)

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AU2001264987A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc., A Corporation Of The State Of Delware Hybrid semiconductor structure and device
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
US8927392B2 (en) * 2007-11-02 2015-01-06 Siva Power, Inc. Methods for forming crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
US8415187B2 (en) * 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
JP2010251458A (ja) * 2009-04-14 2010-11-04 Sony Corp 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法
JP6055325B2 (ja) * 2013-01-30 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法
JP6055290B2 (ja) * 2012-11-26 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法

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JPH0322519A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 化合物半導体混晶の製造方法

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JPH01179411A (ja) * 1988-01-08 1989-07-17 Nec Corp ３−５族化合物半導体気相成長方法
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JPH0322519A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 化合物半導体混晶の製造方法

Also Published As

Publication number Publication date
DE69508801T2 (de) 1999-08-26
US5603764A (en) 1997-02-18
JPH07201737A (ja) 1995-08-04
DE69508801D1 (de) 1999-05-12
CA2139551A1 (en) 1995-07-08
CA2139551C (en) 2004-12-07
SG43823A1 (en) 1997-11-14
EP0662532A1 (en) 1995-07-12
KR950034502A (ko) 1995-12-28
TW257879B (enrdf_load_stackoverflow) 1995-09-21
JP3395318B2 (ja) 2003-04-14
EP0662532B1 (en) 1999-04-07

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