KR100342812B1 - Area array bumped semiconductor package having ground and power lines - Google Patents

Area array bumped semiconductor package having ground and power lines Download PDF

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Publication number
KR100342812B1
KR100342812B1 KR1019960058760A KR19960058760A KR100342812B1 KR 100342812 B1 KR100342812 B1 KR 100342812B1 KR 1019960058760 A KR1019960058760 A KR 1019960058760A KR 19960058760 A KR19960058760 A KR 19960058760A KR 100342812 B1 KR100342812 B1 KR 100342812B1
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semiconductor chip
ground
lead
power line
package
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KR1019960058760A
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Korean (ko)
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KR19980039680A (en
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신원선
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앰코 테크놀로지 코리아 주식회사
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Priority to KR1019960058760A priority Critical patent/KR100342812B1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15182Fan-in arrangement of the internal vias
    • H01L2924/15184Fan-in arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PURPOSE: An area array bumped semiconductor package having a ground and power line is provided to effectively use the inner space of the semiconductor package by locating the ground and power line inside leads. CONSTITUTION: A plurality of bonding pads are formed on the center portion of the rear surface of a semiconductor chip(31). The lower portion of the semiconductor chip(31) is supported by a plurality of leads(32) having a protrusion part, wherein the protrusion part is arranged on the lower portion of the lead(32). A ground and power line(33) are formed inside the leads(32). The semiconductor chip(31) is attached to the upper portion of the leads, and the ground and power line(33) is attached to the rear surface of the semiconductor chip(31) using an adhesive(34). The semiconductor chip(31), the leads(32), and the ground and power line(33) are electrically connected to each other by using wires(35). A molding part(36) is formed on the resultant structure so as to protect the resultant structure and to simultaneously expose the protrusion part to the outside through the lower surface of the resultant structure.

Description

접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지Area array bumped semiconductor package with ground and power lines

이 발명은 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지에 관한 것으로서, 더욱 상세하게 말하자면 회로기판에 실장되기 위한 리드 에어리어가 패키지의 하면에 어레이 형태로 배열되도록 함과 동시에, 상기한 리드의 안쪽으로 전윈선과 접지선이 놓여짐으로써 패키지내의 공간을 효율적으로 활용할 수있는 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지에 관한 것이다.The present invention relates to an area array bumped semiconductor package having a ground line and a power line. More specifically, the lead area for mounting on a circuit board is arranged in the form of an array on the bottom surface of the package. The present invention relates to an area array bumped semiconductor package having a grounding wire and a power supply line that can efficiently utilize space in a package by placing power lines and grounding wires inward.

반도체 패키지는 패키지의 종류에 따라 수지 밀봉 패키지, TCP 패키지, 글래스 밀봉 패키지, 금속 밀봉 패키지 등이 있다. 이와 같은 반도체 패키지는 실장방법에 따라 삽입형과 표면실장(Surface Mount Technology, SMT)형으로 분류하게 되는데, 삽입형으로서 대표적인 것은 DIP(Dual In-line Package), PGA(Pin Grid Array) 등이 있고, 표면실장형으로서 대표적인 깃은 QFP(Quad Flat Package), PLCC(Plastic Leaded Chip Carrier), CLCC(Ceramic Leaded Chip Carrier), BGA(Ball Grid Array) 등이 있다.The semiconductor package may be a resin sealing package, a TCP package, a glass sealing package, a metal sealing package, or the like depending on the type of package. Such semiconductor packages are classified into insertion type and surface mount technology (SMT) type according to the mounting method. Representative types of insert type include DIP (Dual In-line Package) and PGA (Pin Grid Array). Typical types of mounting type include quad flat package (QFP), plastic leaded chip carrier (PLC), ceramic leaded chip carrier (CLCC), and ball grid array (BGA).

최근에는 전자제품의 소형화에 따라 인쇄회로기판의 부품 장착도를 높이기 위해서 삽입형 반도체 패키지 대신에 표면실장형 반도체 패키지가 널리 사용되고 있는 추세이다.Recently, in order to increase the mounting degree of components of a printed circuit board according to the miniaturization of electronic products, surface-mount semiconductor packages have been widely used instead of insertable semiconductor packages.

이와 같은 종래의 반도체 패키지에 대한 이해를 돕기 위하여, 첨부된 도면을 참조로 하여, QFP와, BGA에 대하여 설명하기로 한다.In order to facilitate understanding of such a conventional semiconductor package, the QFP and the BGA will be described with reference to the accompanying drawings.

도 1은 종래의 QFP의 부분 절개 사시도이다.1 is a partial cutaway perspective view of a conventional QFP.

도 1에 도시되어 있듯이 종래의 QFP의 구성은, 반도체 칩(11)과, 상기한 반도체 칩(11)을 적재하기 위한 탑재판(12)과, 상기한 탑재판(12)을 지지하고 있는 타이바(tie bar)(13)와, 상기한 반도체 칩(11)이 외부와 신호를 송수신할 수 있도록 하기 위한 리드(14)와, 상기한 반도체 칩(11)과 리드(14)를 전기적으로 연결시켜주기 위한 와이어(15)와, 상기한 반도체칩(11)에서 발생되는 열을 외부로 발산시키기 위한 방열판(16)과, 상기한 반도체 칩(11)과 리드(14)와 본딩 와이어(15) 등을 보호하기 위한 몰딩물(17)로 이루어진다.As shown in FIG. 1, the conventional QFP has a structure including a semiconductor chip 11, a mounting plate 12 for mounting the semiconductor chip 11, and a tie supporting the mounting plate 12. A tie bar 13, a lead 14 for allowing the semiconductor chip 11 to transmit and receive a signal to and from the outside, and the semiconductor chip 11 and the lead 14 are electrically connected to each other. A wire 15 for discharging, a heat sink 16 for dissipating heat generated by the semiconductor chip 11 to the outside, the semiconductor chip 11, the lead 14, and the bonding wire 15. It consists of a molding 17 for protecting the back.

상기한 구성에 의한 종래의 QFP의 제조공정 및 기능은 다음과 같다.The manufacturing process and function of the conventional QFP by the above structure are as follows.

접착제나 접착 테이프에 의해서 반도체칩(11)이 탑재판(l2)의 위에 접착되면, 본딩 와이어(15)에 의해서 상기한 반도체칩(11)과 리드(14)가 전기적으로 연결되는 와이어 본딩 공정이 진행된다.When the semiconductor chip 11 is bonded onto the mounting plate l2 by an adhesive or an adhesive tape, a wire bonding process in which the semiconductor chip 11 and the lead 14 are electrically connected by the bonding wire 15 is performed. Proceed.

와이어 본딩 공정이 끝나면, 몰딩물(17)을 이용하여 상기한 반도체칩(11)이 둘러쌓여지도록 하여 패키지를 형성함으로써 상기한 반도체칩(11)을 비롯한 리드 (14)와 와이어(15) 등이 보호될 수 있도록 한다.After the wire bonding process is completed, the semiconductor chip 11 is enclosed using the molding 17 to form a package, thereby forming the lead 14 and the wire 15 including the semiconductor chip 11. To be protected.

이와 같이 제작된 QFP 패키지는 회로기판에 장착되어 사용되는데, 이때 반도체칩(11)으로부터 출력되는 신호는 와이어(15)를 거쳐서 리드(14)로 전달되고, 상기한 리드(14)는 회로기판의 배선과 연결되어 있기 때문에 리드(14)로 전달된 신호는 회로기판의 배선을 통하여 주변소자로 전달된다. 주변소자에서 발생된 신호가 반도체 칩(11)으로 전달되는 경우에는 위에서 설명한 경로의 역순으로 신호가 전달된다.The QFP package manufactured as described above is mounted on a circuit board, and the signal output from the semiconductor chip 11 is transmitted to the lead 14 through the wire 15, and the lead 14 is connected to the circuit board. Since it is connected to the wiring, the signal transmitted to the lead 14 is transmitted to the peripheral element through the wiring of the circuit board. When the signal generated from the peripheral device is transferred to the semiconductor chip 11, the signal is transmitted in the reverse order of the path described above.

한편, 반도체칩(11)에서 발생된 열은 탑재판(12)을 거쳐서 방열판(16)으로 전달되며, 방열판(16)에서 외부로 발산됨으로써 반도체칩(11)이 과열되는 것을 방지한다.On the other hand, heat generated in the semiconductor chip 11 is transferred to the heat sink 16 through the mounting plate 12, and is radiated to the outside from the heat sink 16 to prevent the semiconductor chip 11 from overheating.

그러나 상기한 종래의 QFP는, 반도체칩이 점차적으로 고성능화되어 가면서 핀의 수가 더욱 더 많아지게 되는데 비하여, 핀과 핀사이의 거리를 일정치 이하로좁히는 것은 기술적으로 어려움이 있기 때문에 많은 핀을 모두 수용하기 위해서는 패키지가 커지게 되는 단점이 있다. 이것은 반도체 패키지의 소형화 추세에 역행하는 결과를 낳는 문제점이 있다.However, in the conventional QFP, the number of the pins becomes more and more as the semiconductor chip gradually increases in performance, whereas it is technically difficult to narrow the distance between the pins to a predetermined value or less, thus accommodating all the pins. To do this, there is a disadvantage that the package becomes large. This has a problem that results in the reverse of the trend of miniaturization of semiconductor packages.

이와 같은 다핀화에 따른 기술적 요구를 해결하기 위해서 등장한 것이 BGA이다. 상기한 BGA는 입/출력 수단으로서 반도체 패키지의 일면전체에 융착된 솔더볼을 이용함으로써 QFP 보다 많은 수의 입/출력 신호를 수용할 수 있으며, 또한 그 크기도 상대적으로 작기 때문에 반도체 패키지로서 크게 각광을 받고 있다.BGA has emerged to address the technical demands of such multi-pinning. The BGA can receive more input / output signals than QFP by using solder balls fused to the entire surface of the semiconductor package as an input / output means, and because of its relatively small size, the BGA is widely used as a semiconductor package. I am getting it.

도 2는 종래의 BGA의 측단면도이고, 도 3은 종래의 BGA용 인쇄회로기판이다.Figure 2 is a side cross-sectional view of a conventional BGA, Figure 3 is a conventional BGA printed circuit board.

도 2 및 도 3에 도시되어 있듯이 종래의 BGA의 구성은, 기판(21)과, 상기한 기판(21)의 중앙 상면에 에폭시(22)로 접착되어 있는 반도체칩(23)과, 상기한 기판 (21)의 표면에 형성되어 있는 메탈 트레이스(24)와, 상기한 반도체칩(23)의 입출력 패드(25)와 메탈 트레이스(24)를 연결하는 와이어(26)와, 상기한 메탈 트레이스 (24)에 형성되어 있는 랜드 메탈(27)과, 상기한 랜드 메탈(28)에 융착되어 있는 솔더볼(28)과, 상기한 반도체칩(23)과 와이어(26) 등을 외부환경으로부터 보호하기 위한 몰딩물(29)로 이루어진다.As shown in Figs. 2 and 3, the conventional BGA has a structure including a substrate 21, a semiconductor chip 23 bonded to the center upper surface of the substrate 21 with an epoxy 22, and the substrate described above. The metal trace 24 formed on the surface of the 21, the wire 26 connecting the input / output pad 25 and the metal trace 24 of the semiconductor chip 23, and the metal trace 24 described above. Molding to protect the land metal 27 formed on the metal sheet, the solder ball 28 fused to the land metal 28, the semiconductor chip 23, the wire 26, and the like from the external environment. It is made of water 29.

상기한 구성에 의한 종래의 BGA의 제조공정 및 기능은 다음과 같다.The manufacturing process and function of the conventional BGA by the above-described configuration is as follows.

에폭시(22)에 의해서 반도체칩(23)이 기판(21)의 위에 접착되면, 본딩 와이어(26)에 의해서 상기한 반도체칩(23)의 입출력 패드(25)와 메탈 트레이스(24)가 전기적으로 연결되는 와이어 본딩 공정이 진행된다.When the semiconductor chip 23 is bonded onto the substrate 21 by the epoxy 22, the input / output pad 25 and the metal trace 24 of the semiconductor chip 23 are electrically connected by the bonding wire 26. The connecting wire bonding process is performed.

와이어 본딩 공정이 끝나면, 몰딩물(29)을 이용하여 상기한 반도체칩(23)을비롯한 와이어(26) 등이 보호되도록 한 뒤에, 리플로우 공정을 통해서 랜드 메탈 (27)에 솔더볼(28)을 형성함으로써 하여 BGA 패키지를 완성한다.When the wire bonding process is finished, the solder ball 28 is applied to the land metal 27 through the reflow process after the wires 26 and the like including the semiconductor chip 23 are protected using the molding 29. Forming to complete the BGA package.

이와 같이 제작된 BGA 패키지는 회로기판에 장착되어 사용되는데, 이때 반도체 칩(33)으로부터 출력되는 신호는 와이어(26)를 거쳐서 메탈 트레이스(24)로 전달되며, 상기한 메탈 트레이스(24)는 기판(21)의 내부 회로배선을 통하여 랜드 메탈(27)과 연결되어 있기 때문에 메탈 트레이스(24)로 전달된 신호가 랜드 메탈(27)을 거쳐서 솔더볼(28)로 전달되고, 상기한 솔더볼(28)은 회로기판의 회로배선과 연결되어 있기 때문에 솔더볼(28)로 전달된 신호는 회로기판의 회로배선을 통하여 주변소자로 전달된다. 주변소자에서 발생된 신호가 반도체 칩(23)으로 전달되는 경우에는 위에서 설명한 경로의 역순으로 신호가 전달된다.The BGA package manufactured as described above is mounted on a circuit board, and the signal output from the semiconductor chip 33 is transmitted to the metal trace 24 via the wire 26, and the metal trace 24 is a substrate. Since the ground circuit 27 is connected to the land metal 27 through the internal circuit wiring 21, the signal transmitted to the metal trace 24 is transmitted to the solder ball 28 through the land metal 27, and the solder ball 28 is described above. Since the silver is connected to the circuit wiring of the circuit board, the signal transmitted to the solder ball 28 is transmitted to the peripheral device through the circuit wiring of the circuit board. When the signal generated from the peripheral device is transferred to the semiconductor chip 23, the signal is transmitted in the reverse order of the path described above.

그러나 상기한 종래의 BGA는, 기판이 고가이기 때문에 제품의 가격이 상승되는 문제점이 있고, 또한 상기한 기판을 통해서 습기가 침투됨으로써 크랙이 발생하게 되는 문제점이 있다.However, the conventional BGA has a problem that the price of the product is increased because the substrate is expensive, and there is also a problem that cracks are generated due to moisture infiltration through the substrate.

이와 같은 문제점을 해결하기 위하여, BGA 방식이 아니면서도, 기판 접속리드를 패키지의 외부로 돌출시키지 않고 패키지의 하면으로 노출시킴으로써 실장면적을 줄일 수 있는 기술이 대한민국 실용신안 등록출원 공개번호 제95-3135호(공개일 : 서기 1996년 1월 22일)의 "버텀 리드형 반도체 패키지"에서 개시된 바 있다.In order to solve such a problem, a technology which can reduce the mounting area by exposing the board connection lead to the bottom surface of the package without protruding the outside of the package without the BGA method is disclosed in Korean Utility Model Registration Publication No. 95-3135 It has been disclosed in "Bottom Leaded Semiconductor Package," published in January 22, 1996.

그러나, 상기한 종래의 "버텀 리드형 반도체 패키지"는 단순히 리드를 일렬로 배열하여 놓았기 때문에 실장면적을 효율적으로 줄일 수 없는 문제점이 있다.However, the conventional "bottom lead type semiconductor package" has a problem in that the mounting area cannot be efficiently reduced because the leads are simply arranged in a row.

이와 같은 문제점을 해결하기 위하여, 회로기판에 실장되기 위한 리드팁이패키지의 하면에 어레이 형태로 배열되도록 함으로써 실장면적을 효율적으로 줄임과 동시에 저렴한 비용으로 구성할 수가 있는 반도체 패키지에 관한 기술이 대한민국 특허출원 출원번호 제96-22899호(출원일자 : 서기 1995년 6월 2l일)의 "리드 어레이형 리드 프레임 및 이를 이용한 반도체 패키지"에서 본 출원인에 의해 개시된 바 있다.In order to solve such a problem, a technology for a semiconductor package that can be configured at a low cost while efficiently reducing the mounting area by arranging the lead tips for mounting on a circuit board in an array form on the bottom surface of the package is disclosed in the Korean patent. It is disclosed by the present applicant in the "lead array type lead frame and semiconductor package using the same" of the application application No. 96-22899 (filed date: June 2, 1995).

이 발명의 목적은 상기한 특허출원 출원번호 제96-22899호에서 개시된 기술 내용을 더욱 개량하기 위한 것으로서, 회로기판에 실장되기 위한 리드 에어리어가 패키지의 하면에 어레이 형태로 배열되도록 함과 동시에, 리드의 안쪽으로 전원선 과 접지선이 놓여짐으로써 패키지내의 공간을 효율적으로 활용할 수 있는 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지를 제공하는데 있다.An object of the present invention is to further improve the technical contents disclosed in the above-mentioned patent application No. 96-22899, wherein the lead area for mounting on a circuit board is arranged in an array form on the bottom surface of the package, By providing a power line and a ground line inside the space, an area array bumped semiconductor package having a ground line and a power line that can effectively utilize the space in the package is provided.

도 1은 종래의 QFP의 부분 절개 사시도이다.1 is a partial cutaway perspective view of a conventional QFP.

도 2는 종래의 BGA의 측단면도이다.2 is a side cross-sectional view of a conventional BGA.

도 3은 종래의 BGA용 인쇄회로기판이다.3 is a conventional BGA printed circuit board.

도 4은 이 발명의 실시예에 따른 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지의 단면 구성도이다.4 is a cross-sectional configuration diagram of an area array bumped semiconductor package having a ground line and a power line according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

11, 23, 31 : 반도체칩 15, 26, 35 : 와이어11, 23, 31: semiconductor chip 15, 26, 35: wire

14, 32 : 리드 33 : 접지 및 전원선14, 32: Lead 33: ground and power line

17, 29, 36 : 몰딩물 34 : 접착 부재17, 29, 36: molding 34: adhesive member

상기한 목적을 달성하기 위한 수단으로서 이 발명의 구성은, 중앙에 본딩패드가 형성되어 있는 반도체칩과, 상기한 반도체칩을 지지하고 있으며 돌출부가 어레이 형태로 배열되어 패키지의 저면에 노출되어 있는 다수개의 리드와, 상기한 리드의 안쪽으로 놓여져 있는 접지 및 전원선과, 상기한 반도체칩이 상기한 리드의 위에 고정되도록 접착시켜주고, 상기한 접지 및 전원선이 상기한 반도체칩의 하측면에 고정되도록 접착시켜 주기 위한 접착부재와, 상기한 반도체칩과 리드와 접지 및 전원선를 전기적으로 상호 연결시켜주기 위한 와이어와, 상기한 반도체칩과 리드와 접지 및 전원선과 와이어 등을 보호하기 위한 몰딩물을 포함하여 이루어진다.As a means for achieving the above object, the configuration of the present invention includes a semiconductor chip in which a bonding pad is formed in the center, and a plurality of semiconductor chips supporting the semiconductor chip and having protrusions arranged in an array and exposed on the bottom surface of the package. Two leads, ground and power lines placed inward of the lead, and the semiconductor chip are fixed to the top of the lead, and the ground and power lines are fixed to the lower side of the semiconductor chip. An adhesive member for bonding, a wire for electrically connecting the semiconductor chip, the lead, the ground, and the power line to each other; a molding for protecting the semiconductor chip, the lead, the ground, the power line, the wire, and the like. It is done by

상기한 리드는 하프에칭 또는 벤딩을 통하여 돌출부가 형성되는 구조로 이루어질 수 있다.The lead may have a structure in which a protrusion is formed through half etching or bending.

이하, 이 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 이 발명을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 이 발명의 가장 바람직한 실시예를 첨부된 도면을 참조로 하여 설명하기로 한다.Hereinafter, the most preferred embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

도 4는 이 발명의 실시예에 따른 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지의 단면 구성도이다.4 is a cross-sectional configuration diagram of an area array bumped semiconductor package having a ground line and a power line according to an embodiment of the present invention.

도 4에 도시되어 있듯이 이 발명의 실시예에 따른 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지의 구성은, 중앙부분에 본딩패드가 형성 되어 있는 반도체칩(31)과, 상기한 반도체칩(31)을 각각 지지하고 있으며 하프에칭에 의하여 형성된 돌출부가 어레이 형태로 배열되어 패키지의 저면에 노출되어 있는 다수개의 리드(32)와, 상기한 리드(32)의 안쪽으로 위치하며 접착부재(34)를 이용하여 상기한 반도체칩(31)의 하측면에 고정되어 있는 접지 및 전원선(34)과, 상기한 반도체칩(31)이 상기한 리드(32)의 위에 고정되도록 접착시켜줌과 동시에 상기한 접지 및 전원선(33)이 반도체칩(31)의 아랫면에 고정되도록 접착시켜 주기 위한 접착부재(34)와, 상기한 반도체칩(31)의 본딩패드와 리드(32)와 접지 및 전원선 (33)을 전기적으로 상호 연결시켜주기 위한 와이어(35)와, 상기한 반도체칩(31)과 리드(32)와 접지 및 전원선(33)과 와이어(35) 등을 보호하기 위한 몰딩물(37)로 이루어진다.As shown in FIG. 4, the configuration of an area array bumped semiconductor package having a ground line and a power line according to an embodiment of the present invention includes a semiconductor chip 31 having a bonding pad formed at a central portion thereof, and the semiconductor chip described above. Each of the leads 31 and the protrusions formed by half-etching are arranged in an array so that a plurality of leads 32 are exposed on the bottom surface of the package, and the adhesive member 34 is positioned inward of the leads 32. The ground and power lines 34 fixed to the lower side of the semiconductor chip 31 and the semiconductor chip 31 are fixed to the lead 32, and at the same time An adhesive member 34 for attaching a ground and a power line 33 to the bottom surface of the semiconductor chip 31, a bonding pad and a lead 32 of the semiconductor chip 31, and a ground and power line (33) to electrically interconnect And a molding 37 for protecting the semiconductor chip 31, the lead 32, the ground, the power supply line 33, the wire 35, and the like.

상기한 반도체칩(31)에는 고집적된 전자회로가 내장되며, 겉표면의 중앙부위에는 본딩패드가 형성되어 있는 구조로 이루어진다.The semiconductor chip 31 has a highly integrated electronic circuit, and has a structure in which a bonding pad is formed at a central portion of the outer surface.

상기한 리드(32)는 하프에칭(HALF-ETCHING)에 의해서 형성된 돌출부를 갖는데, 이와 같이 에어리어를 형성하기 위해서 하프에칭 방법을 사용하게 되면 리드(32)의 치수를 보다 정밀하게 가공할 수 있을 뿐만 아니라 작업 생산성도 향상시킬 수 잇는 효과를 갖는다. 상기한 바와 같이 하프에칭에 의해서 형성된 리드 (32)의 돌출부는 패키지의 밑면에 어레이 형태로 배열되어 노출됨으로써 상기한 노출된 부분을 이용하여 패키지가 회로기판(도시되지 않음)에 표면실장될 수가 있는데, 이와 같이 하게 되면 BGA와 같이 고가의 인쇄회로 기판을 사용하지 않고서도 리드(32)를 이용하여 반도체칩(31)과 인쇄회로기판을 전기적으로 연결시킬 수가 있으므로 매우 저렴한 패키지를 제작할 수가 있다.The lead 32 has a protruding portion formed by half etching, and when the half etching method is used to form an area, the size of the lead 32 can be processed more precisely. It also has the effect of improving work productivity. As described above, the protrusion of the lead 32 formed by the half etching is arranged in an array form on the bottom of the package and exposed so that the package can be surface mounted on a circuit board (not shown) by using the exposed portion. In this way, since the semiconductor chip 31 and the printed circuit board can be electrically connected to each other using the lead 32 without using an expensive printed circuit board like BGA, a very inexpensive package can be manufactured.

상기한 리드(32)는 하프에칭에 의해서 형성될 수 있을 뿐만 아니라, 벤딩을 통하여 절곡됨으로써 돌출부를 형성할 수도 있다.The lead 32 may not only be formed by half etching, but may also be bent through bending to form a protrusion.

상기한 접지 및 전원선(33)은 리드(32)와 마찬가지로 전기적인 도체로 이루어지며, 반도체칩(31)의 다수개의 접지 및 전원 단자를 각각 하나로 통합하여 하나의 리드(32)를 통해서 패키지의 외부와 연결시켜줌으로써 리드(32)를 효율적으로 사용할 수 있도록 한다.The ground and power lines 33 are made of an electrical conductor similarly to the leads 32. The ground and power lines 33 integrate a plurality of ground and power terminals of the semiconductor chip 31 into one and connect the package with one lead 32. By connecting to the outside it is possible to use the lid 32 efficiently.

상기한 접착 부재(34)는, 접착제 또는 접착 테이프 등과 같이 반도체칩(31)과 리드(32), 그리고 반도체칩(31)과 접지 및 전원선(33)의 사이를 전기적으로 서로 절연시켜주면서 접착시키는 것이면 족하다.The adhesive member 34 is bonded while electrically insulating the semiconductor chip 31 and the lead 32 and the semiconductor chip 31 from the ground and the power supply line 33, such as an adhesive or an adhesive tape. It is enough to let them do.

상기한 와이어(35)는 반도체칩(31)의 본딩패드와, 상기한 반도체칩(31)의 하면에 고정되어 있는 접지 및 전원선(33)과, 상기한 반도체칩(31)을 지지하고 있는 리드(32)들을 전기적으로 접속시켜주기 위해서 본딩되어진다.The wire 35 supports the bonding pads of the semiconductor chip 31, the ground and power lines 33 fixed to the lower surface of the semiconductor chip 31, and the semiconductor chip 31. The leads 32 are bonded to electrically connect the leads 32.

상기한 몰딩물(37)은 상기한 반도체칩(31)과 리드(32)와 접지 및 전원선(33)과, 와이어(35)를 외부환경으로부터 보호한다.The molding 37 protects the semiconductor chip 31, the lead 32, the ground, the power line 33, and the wire 35 from the external environment.

이상에서와 같이 이 발명의 실시예에서, 회로기판에 실장되기 위한 리드 에어리어가 패키지의 하면에 어레이 형태로 배열되도록 함과 동시에, 리드의 안쪽에 접지선 및 접원선이 놓여짐으로써 패키지내의 공간을 효율적으로 활용할 수 있는 효과를 가진 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지를 제공할 수가 있다. 이 발명의 이러한 효과는 반도체 패키지 분야에서 이 발명의 요지를 벗어나지 않는 범위내에서 당업자에 의해 변형되어 이용될 수가 있다.As described above, in the embodiment of the present invention, the lead area for mounting on the circuit board is arranged in the form of an array on the lower surface of the package, and the ground line and the circumferential line are placed inside the lead to efficiently space the package. An area array bumped semiconductor package having a ground line and a power line having an effect that can be utilized can be provided. Such effects of the present invention can be modified and used by those skilled in the art within the scope of the present invention in the semiconductor package field.

Claims (3)

하면 중앙에 다수의 본딩패드가 형성된 반도체칩과;A semiconductor chip having a plurality of bonding pads formed at a center thereof; 상기한 반도체칩을 하부에서 지지하고 있으며 돌출부가 어레이 형태로 하부에 배열된 다수의 리드와;A plurality of leads supporting the semiconductor chip from below and having protrusions arranged at the bottom of the array; 상기한 반도체칩 하면의 본딩패드 외주연인 상기 리드의 내측에 위치된 접지 및 전원선과;Ground and power lines positioned inside the lead, the outer periphery of the bonding pads on the lower surface of the semiconductor chip; 상기한 반도체칩을 상기한 리드의 상면에 접착시키고, 상기한 접지 및 전원선을 상기한 반도체칩의 하면에 접착시키는 다수의 접착부재와;A plurality of adhesive members for adhering the semiconductor chip to the upper surface of the lead and adhering the ground and power lines to the lower surface of the semiconductor chip; 상기한 반도체칩과 리드, 상기한 반도체칩과 접지 및 전원선, 상기 접지 및 전원선과 리드를 전기적으로 상호 연결하는 와이어와;A wire electrically connecting the semiconductor chip and the lead, the semiconductor chip and the ground and a power line, and the ground and the power line and the lead; 상기한 반도체칩과 리드와 접지 및 전원선과 와이어 등을 보호하는 동시에, 상기 리드의 돌출부가 하면으로 노출되도록 몰딩하는 몰딩물을 포함하여 이루어진 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지.An area array bumped semiconductor package including a ground line and a power line, wherein the semiconductor chip and lead, a ground, a power line, a wire, and the like are protected, and a molding is formed to expose the protrusion of the lead to a lower surface thereof. 청구항 1에 있어서, 상기한 리드의 돌출부는 하프에칭에 의해 다른 부위의 리드 두께보다 더욱 두껍게 형성되어 있는 것을 특징으로 하는 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지.The area array bumped semiconductor package according to claim 1, wherein the protruding portion of the lead is formed to be thicker than the lead thickness of another portion by half etching. 청구항 1에 있어서, 상기한 리드는 벤딩을 통하여 돌출부가 절곡형성되는 것을 특징으로 하는 접지선 및 전원선을 구비한 에어리어 어레이 범프드 반도체 패키지.The area array bumped semiconductor package of claim 1, wherein the lead is bent to form a protrusion through bending.
KR1019960058760A 1996-11-28 1996-11-28 Area array bumped semiconductor package having ground and power lines KR100342812B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422046U (en) * 1987-07-29 1989-02-03
KR910016069A (en) * 1990-02-06 1991-09-30 이노우에 사다오 Lead frame and semiconductor device
JPH05114671A (en) * 1991-10-22 1993-05-07 Sony Corp Semiconductor device
KR950004506A (en) * 1993-07-30 1995-02-18 세끼모또 다다히로 Quad-Flat Package for Semiconductor Devices
KR960009278A (en) * 1994-08-29 1996-03-22 정장호 Connection device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422046U (en) * 1987-07-29 1989-02-03
KR910016069A (en) * 1990-02-06 1991-09-30 이노우에 사다오 Lead frame and semiconductor device
JPH05114671A (en) * 1991-10-22 1993-05-07 Sony Corp Semiconductor device
KR950004506A (en) * 1993-07-30 1995-02-18 세끼모또 다다히로 Quad-Flat Package for Semiconductor Devices
KR960009278A (en) * 1994-08-29 1996-03-22 정장호 Connection device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
국내특허공보 4253(등록일:1993.5.22, 공개일: 1991.9.30) *

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