KR100328799B1 - 광음극을이용한전자리소그라피 - Google Patents

광음극을이용한전자리소그라피 Download PDF

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Publication number
KR100328799B1
KR100328799B1 KR1019930025202A KR930025202A KR100328799B1 KR 100328799 B1 KR100328799 B1 KR 100328799B1 KR 1019930025202 A KR1019930025202 A KR 1019930025202A KR 930025202 A KR930025202 A KR 930025202A KR 100328799 B1 KR100328799 B1 KR 100328799B1
Authority
KR
South Korea
Prior art keywords
magnetic field
patterned
layer
image
photocathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930025202A
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English (en)
Korean (ko)
Other versions
KR940016473A (ko
Inventor
죠지래이먼드브랜즈
필립모스플래쯔만
Original Assignee
에이 티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이 티 앤드 티 코포레이션 filed Critical 에이 티 앤드 티 코포레이션
Publication of KR940016473A publication Critical patent/KR940016473A/ko
Application granted granted Critical
Publication of KR100328799B1 publication Critical patent/KR100328799B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H10P76/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/142—Lenses magnetic with superconducting coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019930025202A 1992-12-29 1993-11-25 광음극을이용한전자리소그라피 Expired - Lifetime KR100328799B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/997,817 US5395738A (en) 1992-12-29 1992-12-29 Electron lithography using a photocathode
US997,817 1992-12-29

Publications (2)

Publication Number Publication Date
KR940016473A KR940016473A (ko) 1994-07-23
KR100328799B1 true KR100328799B1 (ko) 2002-08-21

Family

ID=25544430

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930025202A Expired - Lifetime KR100328799B1 (ko) 1992-12-29 1993-11-25 광음극을이용한전자리소그라피

Country Status (8)

Country Link
US (1) US5395738A (cg-RX-API-DMAC10.html)
EP (1) EP0605964B1 (cg-RX-API-DMAC10.html)
JP (1) JPH06283466A (cg-RX-API-DMAC10.html)
KR (1) KR100328799B1 (cg-RX-API-DMAC10.html)
CA (1) CA2107451C (cg-RX-API-DMAC10.html)
DE (1) DE69324560T2 (cg-RX-API-DMAC10.html)
ES (1) ES2132199T3 (cg-RX-API-DMAC10.html)
TW (1) TW249865B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438806B1 (ko) * 1997-09-12 2004-07-16 삼성전자주식회사 광향상전자방출을이용한전자빔리소그래피방법

Families Citing this family (33)

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WO1998048443A1 (en) * 1997-04-18 1998-10-29 Etec Systems, Inc. Multi-beam array electron optics
GB2333642A (en) * 1998-01-21 1999-07-28 Ibm Photo-cathode electron source having an extractor grid
US6014203A (en) * 1998-01-27 2000-01-11 Toyo Technologies, Inc. Digital electron lithography with field emission array (FEA)
US6376985B2 (en) 1998-03-31 2002-04-23 Applied Materials, Inc. Gated photocathode for controlled single and multiple electron beam emission
US6515292B1 (en) * 1998-05-19 2003-02-04 California Institute Of Technology High resolution electron projection
DE69904881T2 (de) * 1998-07-01 2003-10-30 Asml Netherlands B.V., Veldhoven Projektionsbelichtungsgerät
USRE41220E1 (en) 1999-07-22 2010-04-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
AU5932500A (en) 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6376984B1 (en) * 1999-07-29 2002-04-23 Applied Materials, Inc. Patterned heat conducting photocathode for electron beam source
US6476401B1 (en) 1999-09-16 2002-11-05 Applied Materials, Inc. Moving photocathode with continuous regeneration for image conversion in electron beam lithography
US6476402B1 (en) * 2000-07-19 2002-11-05 Samsung Electronics Co., Ltd. Apparatus for pyroelectric emission lithography using patterned emitter
US6828574B1 (en) * 2000-08-08 2004-12-07 Applied Materials, Inc. Modulator driven photocathode electron beam generator
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
WO2003017317A1 (en) * 2001-08-13 2003-02-27 Mapper Lithography Ip B.V. Lithography system comprising a protected converter plate
KR100429843B1 (ko) * 2001-09-22 2004-05-03 삼성전자주식회사 전자 방출 및 상변화물질을 이용한 고밀도정보기록/재생방법 및 이를 응용한 정보저장장치 및 이에사용되는 미디어
WO2003079116A1 (en) * 2002-03-19 2003-09-25 Mapper Lithography Ip B.V. Direct write lithography system
US7019312B2 (en) 2002-06-20 2006-03-28 Mapper Lithography Ip B.V. Adjustment in a MAPPER system
US7161162B2 (en) * 2002-10-10 2007-01-09 Applied Materials, Inc. Electron beam pattern generator with photocathode comprising low work function cesium halide
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US7576341B2 (en) * 2004-12-08 2009-08-18 Samsung Electronics Co., Ltd. Lithography systems and methods for operating the same
KR100590574B1 (ko) * 2004-12-21 2006-06-19 삼성전자주식회사 전자기장 포커싱 장치 및 이를 채용한 전자빔 리소그라피시스템
JP4894223B2 (ja) * 2005-10-26 2012-03-14 ソニー株式会社 平面型表示装置
KR20060088865A (ko) 2006-07-13 2006-08-07 정효수 광방출 소자, 그 제조방법 및 광방출 소자를 이용한 노광장치
US8692204B2 (en) * 2011-04-26 2014-04-08 Kla-Tencor Corporation Apparatus and methods for electron beam detection
US9291578B2 (en) * 2012-08-03 2016-03-22 David L. Adler X-ray photoemission microscope for integrated devices
US9666419B2 (en) * 2012-08-28 2017-05-30 Kla-Tencor Corporation Image intensifier tube design for aberration correction and ion damage reduction
JP2014138163A (ja) * 2013-01-18 2014-07-28 Ebara Corp 電子露光装置
JP2015041648A (ja) * 2013-08-20 2015-03-02 株式会社東芝 パターン形成方法、パターン形成用マスク及びパターン形成装置
US10224175B2 (en) 2015-03-18 2019-03-05 Battelle Memorial Institute Compressive transmission microscopy
US10170274B2 (en) 2015-03-18 2019-01-01 Battelle Memorial Institute TEM phase contrast imaging with image plane phase grating
US10580614B2 (en) 2016-04-29 2020-03-03 Battelle Memorial Institute Compressive scanning spectroscopy
US10295677B2 (en) 2017-05-08 2019-05-21 Battelle Memorial Institute Systems and methods for data storage and retrieval
US10937630B1 (en) * 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177847A (en) * 1985-06-07 1987-01-28 David Warren Turner Electron lithography

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US3806756A (en) * 1972-10-16 1974-04-23 Nasa Image tube
US4350919A (en) * 1977-09-19 1982-09-21 International Telephone And Telegraph Corporation Magnetically focused streak tube
GB8422895D0 (en) * 1984-09-11 1984-10-17 Texas Instruments Ltd Electron beam apparatus
GB2180669A (en) * 1985-09-20 1987-04-01 Phillips Electronic And Associ An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask
EP0312653A1 (en) * 1987-10-22 1989-04-26 Koninklijke Philips Electronics N.V. Electron image projector
JPH01158731A (ja) * 1987-12-15 1989-06-21 Fujitsu Ltd 光電子転写露光方法およびこれに用いられるマスク
US5156942A (en) * 1989-07-11 1992-10-20 Texas Instruments Incorporated Extended source E-beam mask imaging system and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177847A (en) * 1985-06-07 1987-01-28 David Warren Turner Electron lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438806B1 (ko) * 1997-09-12 2004-07-16 삼성전자주식회사 광향상전자방출을이용한전자빔리소그래피방법

Also Published As

Publication number Publication date
CA2107451C (en) 1998-08-18
ES2132199T3 (es) 1999-08-16
CA2107451A1 (en) 1994-06-30
US5395738A (en) 1995-03-07
JPH06283466A (ja) 1994-10-07
EP0605964B1 (en) 1999-04-21
DE69324560T2 (de) 1999-09-23
EP0605964A2 (en) 1994-07-13
TW249865B (cg-RX-API-DMAC10.html) 1995-06-21
EP0605964A3 (en) 1994-11-17
KR940016473A (ko) 1994-07-23
DE69324560D1 (de) 1999-05-27

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